PRESS PACK THYRISTOR 8000 VDRM Search Results

STATIC VAR COMPENSATOR

Abstract: 12V DC sine wave inverters circuit diagram press pack thyristor 9000 VDRM press pack thyristor 10000 VDRM HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor press pack thyristor 8000 VDRM high power thyristor Vdrm 6000 thyristor 2800A
Contextual Info: Mitsubishi Ultra High Voltage Thyristors / Diodes FT1500AU-240 FD2000DU-120 1500 Amperes / 12000 Volts (2000 Amperes / 6000 Volts) Mitsubishi Ultra High Voltage Thyristors are used in high voltage AC Switch and Static Var Compensator (SVC) applications.

static var compensator

Abstract: HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor 8000 VDRM THYRISTOR H 1500 press pack thyristor high power thyristor Vdrm 6000 press pack thyristor 10000 VDRM FT1500AU-240 U240
Contextual Info: Mitsubishi Thyristor FT1500AU-240 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Ultra High Voltage Thyristor 1500 Amperes/12000 Volts J x K (BOTH SIDES) H TYP GATE (WHITE) G TYP AUX CATHODE POTENTIAL CONNECTOR (RED) F

NTE5405

Abstract: GT 32 DIAC
Contextual Info: N T E ELECTRON ICS INC SEE D Bi b 4 3 1 2 S ci DGOs'bSfi 4TS INTE SfcLCQN CQNTROLLE&REeB FOR PHASE CONTROL APPLICATIONS DC or Pk Votts V DRM i (t(rmS) Maximum Forward Current Amps (All Conducting Angles) 0.8A 3A Sensitive Sensitive Gate Gate 4A Sensitive Gate

nte5455

Abstract: nte5679 NTE5402 NTE5556 NTE5614 NTE5534 NTE5457 NTE5646 NTE5468 NTE5629
Contextual Info: N T E ELECTRONICS INC SEE D Bi b 4 3 1 2 S ci DGOs'bSfi 4TS INTE SfcLCQN CQNTROLLE&REeB FOR PHASE CONTROL APPLICATIONS DC or Pk Votts V DRM i (t(rmS) Maximum Forward Current Amps (A ll Conducting Angles) 0.8A 3A Sensitive Sensitive Gate Gate 4A Sensitive Gate

press pack thyristor 8000 VDRM

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2150 A = 3380 A = 35x103 A = 1.25 V = 0.48 m Phase Control Thyristor 5STP 20Q8500 Doc. No. 5SYA1073-01 Nov.11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 52x103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-03 Jan. 13 • Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 47.5•103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-04 Dec. 13 · Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications

5STP20N8500

Abstract: 20N8500 20N850 GTO thyristor ABB 50281 abb phase control thyristors AA115 C115 Thyristor
Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 35x103 A = 1.25 V = 0.48 m Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-02 Jan. 11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

abb phase control thyristors

Abstract: 5STP20N8500
Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 35x103 A = 1.25 V = 0.48 m Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-02 Jan. 11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2150 A = 3380 A = 52x103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20Q8500 Doc. No. 5SYA1073-02 Jan.13 • Patented free-floating silicon technology · Low on-state and switching losses · Optimum power handling capability

5STP20Q8500

Abstract: 20Q8500 vt115 ch 8500 abb phase control thyristors
Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2150 A = 3380 A = 35x103 A = 1.25 V = 0.48 m Phase Control Thyristor 5STP 20Q8500 Doc. No. 5SYA1073-01 Nov.11 Patented free-floating silicon technology Low on-state and switching losses Optimum power handling capability

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2150 A = 3380 A = 47.5•103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20Q8500 Doc. No. 5SYA1073-03 Dec. 13 · Patented free-floating silicon technology · Low on-state and switching losses · Optimum power handling capability

5SYA2020

Contextual Info: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 1600 1901 2987 27.3x103 0.948 0.152 V A A A V mΩ Phase Control Thyristor 5STP 20F1601 Doc. No. 5SYA1061-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications

ch 8500

Abstract: ABB 5STP 12 press pack thyristor 8000 VDRM press pack thyristor 9000 VDRM ABB thyristor 5 5SYA2020
Contextual Info: VDRM VDSM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = = 8000 8500 1200 1880 35x103 1.25 0.48 V V A A A V mΩ Phase Control Thyristor 5STP 12N8500 Doc. No. 5SYA1044-02 Nov. 04 • Patented free-floating silicon technology • Low on-state and switching losses

5sya2020

Abstract: 1-6f-24
Contextual Info: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 2800 1512 2375 23.6x103 1.02 0.265 V A A A V mΩ Phase Control Thyristor 5STP 16F2801 Doc. No. 5SYA1064-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications

4484

Abstract: 5SYA2020
Contextual Info: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 2200 2855 4484 45x103 1.001 0.107 V A A A V mΩ Phase Control Thyristor 5STP 29H2201 Doc. No. 5SYA1067-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications

ABB thyristor 5

Abstract: 5SYA2020 17F2001
Contextual Info: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 2200 1702 2674 25.5x103 0.992 0.206 V A A A V mΩ Phase Control Thyristor 5STP 17F2201 Doc. No. 5SYA1063-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications

5SYA2020

Abstract: press pack thyristor 8000 VDRM 5SYA2034
Contextual Info: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 2800 2670 4193 43x103 1.039 0.127 V A A A V mΩ Phase Control Thyristor 5STP 27H2801 Doc. No. 5SYA1068-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications

press pack thyristor 9000 VDRM

Abstract: ABB thyristor 5 5SYA2020
Contextual Info: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 1800 1825 2867 26.25x103 0.965 0.17 V A A A V mΩ Phase Control Thyristor 5STP 18F1801 Doc. No. 5SYA1062-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications

30H1601

Abstract: ABB thyristor 5 5SYA2020
Contextual Info: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 1800 3108 4882 47x103 0.984 0.081 V A A A V mΩ Phase Control Thyristor 5STP 30H1801 Doc. No. 5SYA1066-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications

abb phase control thyristors

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 2810 A = 4410 A = 65x103 A = 1.12 V = 0.29 m Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA1001-06 Nov. 12 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications

abb phase control thyristors

Abstract: 5STP45Q2800
Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 2800 V = 5490 A = 8625 A = 75x103 A = 0.86 V = 0.07 mΩ Phase Control Thyristor 5STP 45Q2800 Doc. No. 5SYA1050-02 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 2810 A = 4410 A = 45x103 A = 1.12 V = 0.29 m Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA1001-05 Jan. 11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

abb phase control thyristors

Abstract: 5STP52U5200
Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 5200 V = 5060 A = 7940 A = 85.2x103 A = 1.04 V = 0.115 m Phase Control Thyristor 5STP 52U5200 Doc. No. 5SYA1042-05 Jan. 11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications