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    AM27S25DM Rochester Electronics LLC OTP ROM Visit Rochester Electronics LLC Buy
    AM27C256-55PC Rochester Electronics LLC OTP ROM, Visit Rochester Electronics LLC Buy
    AMPAL20L10APC Rochester Electronics LLC PLD Visit Rochester Electronics LLC Buy
    AM27C010-55PI-G Rochester Electronics AM27C010 - EPROM - OTP, EPROM - UV 1Mbit 128k x 8 Visit Rochester Electronics Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
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    Microchip Technology Inc DSC8101BI2-PROGRAMMABLE

    MEMS OSC PROG XO CMOS 2.25-3.6V
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    Microchip Technology Inc DSC8002DI1-PROGRAMMABLE

    MEMS OSC PROG XO CMOS 1.8V-3.3V
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    Microchip Technology Inc DSC8004CI2-PROGRAMMABLE

    MEMS OSC PROG XO CMOS 1.8V-3.3V
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    Microchip Technology Inc DSC8122BI2-PROGRAMMABLE

    MEMS OSC PRG XO LVPECL 2.25-3.6V
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    Microchip Technology Inc DSC8101BL1-PROGRAMMABLE

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    PROGRAMMABLE Datasheets (90)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Pm29F002B-12EC Programmable Microelectronics Flash Memory, 2Mbit, Sectored, 5V Supply, TSOP, 32-Pin Original PDF
    Pm29F002B-12JC Programmable Microelectronics Flash Memory, 2Mbit, Sectored, 5V Supply, LDCC, 32-Pin Original PDF
    Pm29F002B-12PC Programmable Microelectronics Flash Memory, 2Mbit, Sectored, 5V Supply, DIP, 32-Pin Original PDF
    Pm29F002B-15EC Programmable Microelectronics Flash Memory, 2Mbit, Sectored, 5V Supply, TSOP, 32-Pin Original PDF
    Pm29F002B-15JC Programmable Microelectronics Flash Memory, 2Mbit, Sectored, 5V Supply, LDCC, 32-Pin Original PDF
    Pm29F002B-15PC Programmable Microelectronics Flash Memory, 2Mbit, Sectored, 5V Supply, DIP, 32-Pin Original PDF
    Pm29F002B-90EC Programmable Microelectronics Flash Memory, 2Mbit, Sectored, 5V Supply, TSOP, 32-Pin Original PDF
    Pm29F002B-90JC Programmable Microelectronics Flash Memory, 2Mbit, Sectored, 5V Supply, LDCC, 32-Pin Original PDF
    Pm29F002B-90PC Programmable Microelectronics Flash Memory, 2Mbit, Sectored, 5V Supply, DIP, 32-Pin Original PDF
    Pm29F002T-12EC Programmable Microelectronics Flash Memory, 2Mbit, Sectored, 5V Supply, TSOP, 32-Pin Original PDF
    Pm29F002T-12JC Programmable Microelectronics Flash Memory, 2Mbit, Sectored, 5V Supply, LDCC, 32-Pin Original PDF
    Pm29F002T-12PC Programmable Microelectronics Flash Memory, 2Mbit, Sectored, 5V Supply, DIP, 32-Pin Original PDF
    Pm29F002T-15EC Programmable Microelectronics Flash Memory, 2Mbit, Sectored, 5V Supply, TSOP, 32-Pin Original PDF
    Pm29F002T-15JC Programmable Microelectronics Flash Memory, 2Mbit, Sectored, 5V Supply, LDCC, 32-Pin Original PDF
    Pm29F002T-15PC Programmable Microelectronics Flash Memory, 2Mbit, Sectored, 5V Supply, DIP, 32-Pin Original PDF
    Pm29F002T-90EC Programmable Microelectronics Flash Memory, 2Mbit, Sectored, 5V Supply, TSOP, 32-Pin Original PDF
    Pm29F002T-90JC Programmable Microelectronics Flash Memory, 2Mbit, Sectored, 5V Supply, LDCC, 32-Pin Original PDF
    Pm29F002T-90PC Programmable Microelectronics Flash Memory, 2Mbit, Sectored, 5V Supply, DIP, 32-Pin Original PDF
    Pm29F004B-55EC Programmable Microelectronics Flash Memory, 4Mbit, Sectored, 5V Supply, TSOP, 32-Pin Original PDF
    Pm29F004B-55JC Programmable Microelectronics Flash Memory, 4Mbit, Sectored, 5V Supply, LDCC, 32-Pin Original PDF

    PROGRAMMABLE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TIBPAL22V10-20M HIGH-PERFORMANCE IMPACT-X PROGRAMMABLE ARRAY LOGIC CIRCUITS SRPSQ12A - D3523, JUNE 1 9 9 0 -R E V IS E D MARCH 1992 JT P A C K A G E Second-Generation PLD Architecture TO P V IE W High-Performance Operation: fmax (External Feedback). . . 33.3 MHz


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    PDF TIBPAL22V10-20M SRPSQ12A D3523, SRPS012A 10-BIT

    UZ210

    Abstract: P1275
    Text: TOSHIBA MOS MEMORY PRODUCTS TMM27512ADI-20, TMM27512ADI-25 DESCRIPTION The TMM27512ADI is a 65,536 words * 8 bits ultraviolet light erasable and electri­ cally programmable read only memory. For read operation, the TMM27512ADI's access time is 200ns/250ns, and the TMM27512ADI


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    PDF TMM27512ADI-20, TMM27512ADI-25 TMM27512ADI 200ns/250ns, 200ns 130mA TMM27512ADI. UZ210 P1275

    Untitled

    Abstract: No abstract text available
    Text: TMS28C64 65,536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY • Organization 8K x 8 • Single 5-V Power Supply ± 10% N AND J PACKAGES (TOP VIEW } Q 1 U A 12C 2 A7C 3 Compatible with Existing 64K M O S EPRO M s. PRO M s. R O M s, and EEPR O M s


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    PDF TMS28C64 536-BIT

    Untitled

    Abstract: No abstract text available
    Text: TL16C550C ASYNCHRONOUS COMMUNICATIONS ELEMENT WITH AUTOFLOW CONTROL SLLS177B- MARCH 1994 - REVISED MARCH 1996 • Programmable Auto-RTS and Auto-CTS • In Auto-CTS Mode, CTS Controls Transmitter • In Auto-RTS Mode, RCV FIFO Contents and Threshold Control RTS


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    PDF TL16C550C SLLS177B- TL16C450 16-MHz 16-byte

    12v 1200mah battery NiMH

    Abstract: 12v 1200mah nimh battery db opera 415 12v 1200mah nimh 12v 1200mah battery
    Text: y UCC2956 UCC3956 mmm UNITRODE Switch Mode Lithium-Ion Battery Charger Controller FEATURES Precision 4.1V Reference 1% High Efficiency Battery Charger Solution Average Current Mode Control from Trickle to Over Charge Resistor Programmable Charge Currents


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    PDF UCC2956 UCC3956 UCC3956 SEM700, 680pF 12v 1200mah battery NiMH 12v 1200mah nimh battery db opera 415 12v 1200mah nimh 12v 1200mah battery

    54256AP

    Abstract: TC54256AF 54256a TC54256P 54256AF tmm23256p 27256D tc54256ap
    Text: TOSHIBA TC54256AP/AF SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY D e s c rip tio n The TC54256AP/AF is a 32,768 word x 8 bit one time programm able read only m em or/ m olded in a 28-pin plastic package. The TC54256AP/AF’s access time is 200ns and it has a low power standby m ode which reduces the power dissipation without


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    PDF TC54256AP/AF TC54256AP/AF 28-pin 200ns TC57256AD TC54256AP/AF. 54256AP TC54256AF 54256a TC54256P 54256AF tmm23256p 27256D tc54256ap

    Field-Programmable Gate Arrays

    Abstract: No abstract text available
    Text: TPC14 SERIES CMOS FIELD-PROGRAMMABLE GATE ARRAYS ^ JA N U A RY 1993 • • • • • • Gate Capacities from < 1,000 to > 10,000 Gate Array Gates Gate Capacities from < 2,500 to > 25,000


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    PDF TPC14 16-Bit TPC10 TPC12 Field-Programmable Gate Arrays

    A1051

    Abstract: No abstract text available
    Text: TMS27C291, TMS27C292 16.384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ-ONLY MEMORY SEPTEM BER 1986 —REVISED APRIL 1988 Organization . . . 2K x 8 J AND N PA C KA G E Pin Compatible with Existing 2K x 8 Bipolar/High-Speed CM OS EPROMs


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    PDF TMS27C291, TMS27C292 384-BIT TMS27PC291 27C/PC291-3 27C/PC291 27C/PC291-5 27C/PC291-35 27C/PC291-45 A1051

    27C020-12

    Abstract: 27PC020-12 LS020 A1025 LS020B 2097152-BIT
    Text: TMS27C020 2097152-BIT UV ERASABLE PROGRAMMABLE TMS27PC020 2097152-BIT PROGRAMMABLE READ-ONLY MEMORY SM LS020B - N O V E M B E R 1990 - REVISED JU N E 1995 • Organization . . . 256K x 8 J PACKAGE TOP VIEW • Single 5-V Power Supply • Operationally Compatible With Existing


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    PDF TMS27C020 2097152-BIT TMS27PC020 LS020B 32-Pln 32-Lead 27C/PC020-12 27C/PC020-15 27C/PC020-20 27C020-12 27PC020-12 LS020 A1025

    TLP639

    Abstract: TLP639-F TLP639F VDE-0110
    Text: TLP639F GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA Unit in mm OFFICE MACHINE HOUSEHOLD USE EQUIPMENT 6 5 4 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP639F consists of two gallium arsenide infrared emitting diode connected inverse parallel,


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    PDF TLP639F TLP639F TLP639. 5000Vrms 500Vac 883/VDE0883/6 804/VDE0804/1 IEC65/VDE0860/8 IEC380/VDE0806/8 IEC435/VDE0805/Draft TLP639 TLP639-F VDE-0110

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.


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    PDF TC58V64FT/DC 64-MBIT TC58V64FT/DC 016-bit) 528-byte 44/40-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC57256AD-12,-120,-150 32 , 768 W O R D x 8 B I T C M O S UV ERASABLE A N D ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY IDESCRIPTIONI The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electri­


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    PDF TC57256AD-12 TC57256AD 120ns, 30mA/8 TC57256AD.

    T5CD

    Abstract: No abstract text available
    Text: U M C U M 2661 Enhanced Programmable Communications Interface EPCI Features • Automatic serial echo mode (échoplex) ■ Local or remote maintenance loop back mode Baudrate: de to IM bps (1X clock) - de to 62.5K bps (16X clock) - de to 15.625K bps (64X clock)


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    PDF UM2661 UM2661-2 UM2661-3 T5CD

    Untitled

    Abstract: No abstract text available
    Text: GaAÄAs IRED & PHOTO-DIODE ARRAY TLP590B ¡TLP590B TELECOMMUNICATION PROGRAMMABLE CONTROLLERS MOS GATE DRIVER MOS FET GATE DRIVER U n it in mm The T O S H IB A TLP590B consists of an aluminum galium arsenide infrared emitting diode optically coupled to a series connected photo­


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    PDF TLP590B TLP590B) TLP590B UL1577, E67349 510kil

    ksy 11

    Abstract: No abstract text available
    Text: y UC1875/6/7/8 UC2875/6/7/8 UC3875/6/7/8 UNITRODE Phase Shift Resonant Controller FEATURES DESCRIPTION • Zero to 100% Duty Cycle Control • Programmable Output Turn-On Delay The UC1875 family of integrated circuits implements control of a bridge power stage by phase-shifting the switching of one half-bridge with respect


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    PDF UC1875/6/7/8 UC2875/6/7/8 UC3875/6/7/8 10MHz 150nA UC1875 UC1875. ksy 11

    TC57256AD

    Abstract: No abstract text available
    Text: TOSHIBA TC57256AD-12 TC57256AD-120 TC57256AD-150 SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY Description The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It


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    PDF TC57256AD-12 TC57256AD-120 TC57256AD-150 TC57256AD 30mA/8 TC57256AD.

    TIBPSG507AC

    Abstract: No abstract text available
    Text: TIBPSG507AC 13 x 80 x 8 PROGRAMMABLE SEQUENCE GENERATOR I SRPS002D - D3029. MAY 1 9 8 7 -R E V IS E D NO VEM BER 1995 • JT O R 58-MHz Max Clock Rate N T P A C K A G E T O P V IE W • | • • • • Ideal for Waveform Generation and High-Performance State Machine


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    PDF TIBPSG507AC 58-MHz SRPS002D D3029.

    27C510

    Abstract: pc51020 SMJ27C510 pc510-20
    Text: TMS27C510 524 288-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC510 524 288-BIT PROGRAMMABLE READ-ONLY MEMORY SMLS51OA-AUGUST 1990-REVISED JANUARY 1993 J AND N PACKAGESÎ TOP VIEW Organization . . . 64K x 8 Single 5-V Power Supply V pp [ Pin Compatible With Existing 1 Meg MOS


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    PDF TMS27C510 288-BIT TMS27PC510 SMLS51OA-AUGUST 1990-REVISED 27C510-12 27C/PC510-15 27C/PC510-17 27C/PC510-20 27C510 pc51020 SMJ27C510 pc510-20

    Untitled

    Abstract: No abstract text available
    Text: UC1849 UC2849 UC3849 UNITRODE Secondary Side Average Current Mode Controller FEATURES DESCRIPTION • Practical Secondary Side Control of Isolated Power Supplies • 1MHz Operation • Differential AC Switching Current Sensing • Accurate Programmable Maximum Duty Cycle


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    PDF UC1849 UC2849 UC3849 70MHz, U-140.

    TL14310

    Abstract: TL1431C SLVS062B
    Text: TL1431C, TL1431Q, TL1431Y PRECISION PROGRAMMABLE REFERENCES SLVS062B - DECEMBER 1991 - REVISED AUGUST 199S D PACKAGE TOP VIEW 0.4% Initial Voltage Tolerance 0.1-Q Typical Output Impedance Fast Turn O n . . . 500 ns Sink Current Capability. . . 1 mA to 100 mA


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    PDF TL1431C, TL1431Q, TL1431Y SLVS062B O-226AA TL1431 TL14310 TL1431C

    42c27

    Abstract: No abstract text available
    Text: T E X A S IN S T R -CASIC/MEMORY} 42 Ô 96Ï725 1 I PROGRAMMABLE L0G|C 42C 27235 TEXAS D E § aTt.l7 aS 0 0 S 7 2 3 S I'NSTR <AS I C /MEMORY TYPES SN54PL333, SN54PL335, SN74PL333, SN74PL335 FIELD-PROGRAMMABLE LOGIC SEQUENCERS D2707r DECEMBER 1982 07 J OR N DUAL-IN-LINE PACKAGE


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    PDF SN54PL333, SN54PL335, SN74PL333, SN74PL335 D2707r PL333 PL33HH 42c27

    NS16C450N

    Abstract: No abstract text available
    Text: TL16C450 ASYNCHRONOUS COMMUNICATIONS ELEM ENT 0 3 0 9 6 , M A R C H 1 9 8 8 - R E V IS E O A P R IL 1 9 8 9 N DUAL-IN-LINE PACKAGE • Programmable Baud Rate Generator Allows Division of Any Input Reference Clock by 1 to 216 - 1 and Generates an Internal 16 X


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    PDF TL16C450 TL16C450 NS16C450N

    18n8

    Abstract: No abstract text available
    Text: T IB P A D 18N8-6C HIGH-PERFORMANCE PROGRAMMABLE AD D RESS DECODER/NAND ARRAY D 3 0 8 6 , DECEMBER 1 9 8 7 Very High Speed Address Decoder Ideal for Use w ith High Speed Processors I/O Propagation Delay: 6 ns Max • Suitable for High Speed N A ND-NAND Logic


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    PDF 18N8-6C 18n8

    Untitled

    Abstract: No abstract text available
    Text: SM/SMJ34061 VIDEO SYSTEM CONTROLLER JULY 1 98 7 • Generates User-Programmable Control Signals Horizontal Sync, Vertical Sync, and Blanking Which Support a Broad Range of Raster-Scan Display Systems with Varying Resolutions and Scan Rates S M J 3 4 0 6 1 G B . . . 68-P IN PGA


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    PDF SM/SMJ34061 SMJ4161