PROM 8KX8 Search Results

Contextual Info: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogramm ability • High speed The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically

A7 SMD TRANSISTOR

Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
Contextual Info: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is

Contextual Info: CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically powers down into a low-power standby mode. It is packaged

C266

Abstract: P15 Package 27C64 CY7C266 R1250 8kx8 eprom pin diagram
Contextual Info: ,.V.Ï .Ï .V.^ y nr' Æ CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Functional Description Features • CMOS fo r optimum speed/power • Windowed for reprogramm ability • High speed The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically

27C64

Abstract: CY7C266 R1250 LP 06 A4 A1 AA
Contextual Info: ,.V.Ï.Ï.V.^ y nr' Æ CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Functional Description Features • CMOS fo r optimum speed/power • Windowed for reprogramm ability • High speed The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically

Z80A CPU

Abstract: Z80A-CTC z80a-PIO 2316E 4027 ram Z80A Z80A-CPU z80 pio Z80 RAM 1024x1 static ram
Contextual Info: MOS INTEGRATED CIRCUITS continued POWER TEMP. RANGE (°C) RAM 1024x1 bit static 2 5 - 0.25 2.2 2.2 33 - 0-70 D IP K, M M 2316E •ROM 2Kx8 bit 2 5 - 0.45 2.2 2.2 40 - 0-70 DIP R, U M 2704 PROM 512x8 bit 5 5 12 0.45 2.2 2.2 - - 0-70 D IP J M 2708 PROM 1Kx8 bit

C2665

Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
Contextual Info: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)

Contextual Info: JUNE 1990 IPILES SE Y SEMICONDUCTORS PRELIMINARY INFORMATION PNC10C68 CMOS/SNOS nvSRAM HIGH PERFORMANCE 8Kx8 NON-VOLATILE STATIC RAM Supersedes M ay 1990 edition The PNC10C68 is a fast static RAM (25, 30, 35 and 45 ns), with a non-volatile electrically-erasable PROM

United Technologies Microelectronics

Contextual Info: Military Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Preliminary Data Sheet W IUNITED TECHNOLOGIES MICROELECTRONICS ICENTER June 1996 FEATURES □ Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer

TTE24C

Contextual Info: 64K-bit/32K-bit 2-Wire Serial CMOS EEPROM TTE24C32/TTE24C64 Preliminary Description The TTE24C32/TTE24C64 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The TTE24C32/TTE24C64 contains a memory array of 32K-bits 4Kx8 and 64K-bits (8Kx8) repectively, and

Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet September 2000 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for

8Kx8 28F64

Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet April 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for availability

27C64

Abstract: CY7C266 R1250 direct replacement
Contextual Info: 66 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) The CY7C266 is a high-performance 8192 word by 8 bit

INTEL 2764A

Abstract: 2764a-2 i2764a 2764 memory chip 2764A2 2764A1 Z8051
Contextual Info: in t e i 2764A ADVANCED 64K 8Kx8 UV ERASABLE PROM - 200 nsec StandardAccess Time — HMOS H*-E Technology ' • Low Power - 6 0 mA Maximum Active " intel‘9ent Identifier Mode — Automated Programming Operations — 20 mA Maximum Standby in d ig e n t Programming™ Algorithm

Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 35ns and 45ns maximum address access time -55 oC to

Contextual Info: Standard Products UT28F64LV Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 55ns maximum address access time -55 oC to +125 oC

8Kx8 28F64

Abstract: RADHA
Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 35ns and 45ns maximum address access time -55 oC to

Contextual Info: Standard Products UT28F64LV Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 55ns maximum address access time -55 oC to +125 oC

8Kx8 28F64

Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Preliminary Data Sheet Dec. 1997 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for

MARKING A5

Contextual Info: Standard Products UT28F64LV Radiation-Hardened 8K x 8 PROM Advanced Data Sheet March 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for

8Kx8 28F64

Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Preliminary Data Sheet December 1998 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for

Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES G Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer G 35ns and 45ns maximum address access time -55 oC to

8Kx8 28F64

Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 35ns and 45ns maximum address access time -55 oC to

8Kx8 28F64

Abstract: 28F64-35
Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Data Sheet August 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q 35ns and 45ns maximum address access time -55 oC to