PS1101W Search Results

PS1101WA

Abstract: PS1101W
Contextual Info: PS1101WA Surface Mount Phototransistor/Flat Lenz Type Features Package Product features Flat Lenz Type, Water clear epoxy ・Outer Dimension 3.0 x 2.0 x 1.5mm L x W x H ・Photo Current : 3.5mA TYP. (VCE=5V,Ee=5mW/cm2) ・Wide Distribution ・Lead–free soldering compatible

PS1101W

Contextual Info: PS1101WA Surface Mount Phototransistor/Flat Lenz Type Features Package Product features Flat Lenz Type, Water clear epoxy ・Outer Dimension 3.0 x 2.0 x 1.5mm L x W x H ・Photo Current : 3.5mA TYP. (VCE=5V,Ee=5mW/cm2) ・Wide Distribution ・Lead–free soldering compatible

PS1101W

Abstract: 1111C 1201w
Contextual Info: Real Specification U n it: mm SiH K M Quantities & # Type No. 1111C,1211C,1112H 1101W,1102W 1201W.1204W 1101 F,1111R AN1102W,DN1102W PS1101W,PP1101W m /i u-ju Pcs./Reel 4,000 2,500 3,000 2,500 2,500 The dimenisions can be used all of products. • x— 1111C

ps1101wa

Abstract: lenz
Contextual Info: PS1101WA Surface Mount Phototransistor/Flat Lenz Type Features Package Product features Flat Lenz Type, Water clear epoxy ・Outer Dimension 3.0 x 2.0 x 1.5mm L x W x H ・Photo Current : 3.5mA TYP. (VCE=5V,Ee=5mW/cm2) ・Wide Distribution ・No lead package

Contextual Info: PS1101WA Surface Mount Phototransistor/Flat Lenz Type Features Package Product features Flat Lenz Type, Water clear epoxy ・Outer Dimension 3.0 x 2.0 x 1.5mm L x W x H ・Photo Current : 3.5mA TYP. (VCE=5V,Ee=5mW/cm2) ・Wide Distribution ・No lead package

K11 transistor

Abstract: PS1101W
Contextual Info: •PHOTO TRANSISTOR ▼CHARACTERISTICS BY MATERIAL T a -2 5 C ▼CHARACTERISTICS BY SHAPE Ta=25C 94 ▼CHARACTERISTICS BY SHAPE Shape Type No. Features Peak Sensitive. Wavelength / p TYP MIN 880 0.7 Chip type PS1101W Ta=25C Pnotc Current 1c TYP Vcn 5 3.5 Spatial Distribution

Contextual Info: PS1101WA Surface Mount Phototransistor/Flat Lenz Type Features Package Product features Flat Lenz Type, Water clear epoxy ・Outer Dimension 3.0 x 2.0 x 1.5mm L x W x H ・Photo Current : 3.5mA TYP. (VCE=5V,Ee=5mW/cm2) ・Wide Distribution ・Lead–free soldering compatible

Contextual Info: PS1101WA Surface Mount Phototransistor/Flat Lenz Type Features Package Product features Flat Lenz Type, Water clear epoxy ・Outer Dimension 3.0 x 2.0 x 1.5mm L x W x H ・Photo Current : 3.5mA TYP. (VCE=5V,Ee=5mW/cm2) ・Wide Distribution ・No lead package

PS1101W

Contextual Info: PS1101WA Surface Mount Phototransistor/Flat Lenz Type Features Package Product features Flat Lenz Type, Water clear epoxy ・Outer Dimension 3.0 x 2.0 x 1.5mm L x W x H ・Photo Current : 3.5mA TYP. (VCE=5V,Ee=5mW/cm2) ・Wide Distribution ・Lead–free soldering compatible

PS5052

Abstract: PS5022 PS1101W TRANSISTOR D 880 PS2022 PS3022 PS3072 PS3322 PS4032 PS5042
Contextual Info: •PHOTO TRANSISTOR ▼CHARACTERISTICS BY MATERIAL T a = 2 5 ”C izii* .l.o O p tim i C,hpracîtoMst'<.s < T vpo p T O -1 8 PS ■ .''III to i B ri’,.k<JijV„n H " j k f . j. v i/o lt^ g - i & s ‘ ,p.-1un l/ r ln n * - T ypt N- V- V '.'o ll& c to i

TRANSISTOR DNH

Abstract: PS5022 PS1191RA PP1101W PS1101RA PS1101WA PS1102HA PS1192FA PS1192HA peak spectral response 900 nm photo detector
Contextual Info: CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor Through-Hole Shape Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number

BR2533D

Abstract: LMD09A-LRG4 MVR5364X
Contextual Info: •PRODUCT TABLE PART NO. AA1101F AA1101W AA1102W AA1111C AA1111R AA1112H AA2202S AA2222S AA2434D AA2533D AA3365S AA3822K AA3889S AA5304S AA5305S AA5307S AA5334S AA5335S AA5351K AA5362X AA5385X AA7351K AAA101 AAA121 AABG4607K AAR101 AAR121 AN1102W AN304 AN326

Stanley PS5022

Abstract: DIODE PP602 KU163A PP701 DNP318U-4 DNP331 PP602 DNP1105W DNP319 PS5022
Contextual Info: OPTICAL SENSOR Super intensity infrared LEDs and photo detectors are used in these photo sensors. Stanley offers high quality and reliability in all of its sensors for use in optical disks, office automation equipment and optical connectors for surface mount devices.

DNP1105W

Abstract: pcb warpage DNP1102F PS1191RA LED Tr 1105W AN1101W AN1102F ps1101wa AN1105W
Contextual Info: SMT SHAPE - INFRARED LED n Infrared LED Shape Part No. Ta=25°C Features Peak Wavelength lP TYP. IF Radiant Intensity IE MIN. TYP. IF Output Power Po Cut-Off Frequency Fc TYP. MIN. TYP. IF Spatial Distribution The typical distribution example of each shape is shown below

PS1101W

Contextual Info: I'M Seasor •PHOTO TRANSISTOR ▼CHARACTERISTICS BY MATERIAL A b s o lu te M a x im u m R a tin g s O perating Tem p. Storage Tem p. Ic Tstg Type Pd 502 60 Vgeo Veco 30 M AX. VCEO TYP. VCE ÍC Rl X p TYP -30-+85 —30—+100 0 .2 10 5 10 2 100 880 —30—+85

DN305

Abstract: AN-305 Stanley PS5022
Contextual Info: ISUPER INTENSITY VISIBLE LED I INFRARED LED / PHOTO DETECTOR Stanley super-intensity visible and infrared LEDs 660 nm to 925 nm are suitable as light sources for optical comm unications, bar-code readers and sensors. The package of the L D - 3 1 1, □ □ - 5 1 1 and □ □ - 1 0 1 1 series used for light sourcing and reception can be easily combined with

DIODE PP602

Abstract: pp602 PP701 pp601 40 PP601 PP1101W PS1101RA PS1101WA PS1102HA PS1191RA
Contextual Info: CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor Through-Hole Shape Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number

SDB-505

Abstract: SDB-205 SDB-505A-RD SDB505B-GD EBR5334S SDB-205B-GD AA735 SDB-505A-GD DNP1105W SDB-505A
Contextual Info: •PRODUCT TABLE PART NO. PAGE PART NO. PAGE PART NO. PAGE AA1101F 58 BG2202S 39 BR5356K AA1101W 67 BG2222S 39 BR5362X 31 AA1102W 67 BG3365S 34 BR5363X 30 AA1111C 54 BG3822K 42 BR5364X 30 AA1111R 66 BG3889S 34 BR5373X 30 AA1112H 56 BG5304S 32 BR5374X 30 AA2202S