PSPICE HIGH FREQUENCY IGBT Search Results

IGBT Pspice

Contextual Info: ITS60F06 ITS60F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4715-2.2 DS4715-4.0 May 1999 The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of low to medium

pspice high frequency igbt

Abstract: DS4926
Contextual Info: MITEL ITS03F03 Medium Frequency Powerline N-Channel IGBT SEM ICON D UCTOR Supersedes April 1998, version DS4926 - 1.1 DS4926 - 2.2 February 1999 Key Parameters The ITS03F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

pspice high frequency igbt

Abstract: DS4713-2 ITS23F06 ITS23F06P T0247
Contextual Info: M ITEL S E M IC O N D U C T O R ITS23F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4713-2.3 DS4713-3.2 March 1999 Key Parameters The ITS23F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

IGBT Pspice

Abstract: sc 1091
Contextual Info: MITEL ITS30F03 Medium Frequency Powerline N-Channel IGBT SEM ICON D UCTOR Supersedes April 1998, version DS4925-1.2 DS4925-2.2 February 1999 Key Parameters The ITS30F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

coxd

Contextual Info: M ITEL S E M IC O N D U C T O R ITS18F03 Medium Frequency Powerline N-Channel IGBT Supersedes April 1998, version DS4867-1.3 DS4867-2.2 February 1999 Key Parameters The ITS18F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

pspice high frequency igbt

Abstract: dc chopper circuit PSPICE Orcad ITS13F06B
Contextual Info: M ITEL S E M IC O N D U C T O R ITS13F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4712-2.2 DS4712-3.2 March 1999 Key Parameters The ITS13F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

T 600 D

Abstract: ITS40F06 ITS40F06P T0247 PSPICE Orcad ITS40
Contextual Info: MITEL ITS40F06 Medium Frequency Powerline N-Channel IGBT SEM ICON D UCTOR Supersedes February 1998, version DS4682-3.4 DS4682-4.2 March 1999 Key Parameters The ITS40F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

1654p

Abstract: mj 15003 power circuit IGBT Pspice mj 15003 transistor ON MJ 15003
Contextual Info: M ITEL S E M IC O N D U C T O R ITS08F12 Medium Frequency Powerline N-Channel IGBT Supersedes February 1998, version DS4716-2.4 DS4716-3.2 March 1999 Key Parameters The ITS08F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

ITS25F12

Abstract: ITS25F12P T0247 pspice high frequency igbt
Contextual Info: M ITEL S E M IC O N D U C T O R ITS25F12 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4718-2.3 DS4718-3.2 March 1999 Key Parameters The ITS25F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

ITS35F12

Abstract: ITS35F12P T0247
Contextual Info: M ITEL S E M IC O N D U C T O R ITS35F12 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4719-2.3 DS4719-3.2 March 1999 Key Parameters The ITS35F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

DS4715-2

Abstract: pspice high frequency igbt ITS60F06P T0247 ITS60F06
Contextual Info: M ITEL S E M IC O N D U C T O R ITS60F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4715-2.2 DS4715-3.2 March 1999 Key Parameters The ITS60F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

ITS15F12P

Abstract: T0247
Contextual Info: M ITEL S E M IC O N D U C T O R ITS15F12 Medium Frequency Powerline N-Channel IGBT Supersedes February 1998, version DS4717-2.3 DS4717-3.2 March 1999 Key Parameters The ITS15F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

T0252

Abstract: ITS06F03B ITS06F03G
Contextual Info: M ITEL S E M IC O N D U C T O R ITS06F03 Medium Frequency Powerline N-Channel IGBT Supersedes April 1998 version, DS4866-1.3 DS4866-2.1 February 1999 Key Parameters The ITS06F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

Contextual Info: M ITEL ITS03F03 Medium Frequency Powerline N-Channel IGBT SEMICONDUCTOR Supersedes April 1998, version DS4926 - 1.1 DS4926 - 2.2 February 1999 The ITS03F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of low to medium

DI810

Contextual Info: M ITEL ITS06F03 Medium Frequency Powerline N-Channel IGBT SEMICONDUCTOR Supersedes April 1998 version, DS4866-1.3 DS4866-2.1 February 1999 The ITS06F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of low to medium

Contextual Info: ITS30F03 M IT E L Medium Frequency Powerline N-Channel IGBT S E M IC O N D U C T O R Supersedes April 1998, version DS4925-1.2 DS4925-2.2 February 1999 The ITS30F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

Rogowski Coil design

Abstract: Rogowski Coil Measurement of stray inductance for IGBT IGBT Pspice IGBT 5kV pspice high frequency igbt pwm igbt rogowski coil measurement IGBT with V-I characteristics Rogowski
Contextual Info: Research of Current Distribution in IGBT Modules with Multiple Chips in Parallel M.Bäßler1, M.Münzer1, S.Burkert2 1 eupec GmbH, Max Planck Str.5, D-59581Warstein Germany, Tel: +49-2902-764-2290, Fax: +492902-764-1150, email: marco.baessler@eupec.com 2) Otto-von-Guericke-Universität, Universitätsplatz2 Magdeburg Germany

SPICE model for UC3844

Abstract: UC3843 spice model tl494 spice model EB407 Basic Halogen Converter MTP2N10 180V - 240V igbt dimmer UC3845 pspice model mosfet cross reference spice model moc3061 uc3843 flyback supply opto-coupler
Contextual Info: BR1522/D Rev. 2, Aug-2000 Technical Literature Selector Guide and Cross Reference ON Semiconductor A Listing and Cross Reference of Available Technical Literature from ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

g30h603

Contextual Info: IGBT IGW30N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IGW30N60H3 Highspeedswitchingseriesthirdgeneration

G20H603

Contextual Info: IGBT IGW20N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IGW20N60H3 Highspeedswitchingseriesthirdgeneration

G50H603

Contextual Info: IGBT IGW50N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IGW50N60H3 Highspeedswitchingseriesthirdgeneration

Contextual Info: IGBT IGP20N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IGP20N60H3 Highspeedswitchingseriesthirdgeneration

Contextual Info: IGBT IGP30N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IGP30N60H3 Highspeedswitchingseriesthirdgeneration