PT 10 LH 10K Search Results

AN525

Abstract: BC327-25 SMD AN500-x smd diode S4 6E Zener Diode 1b8 PGKE AUSTRIA MIKRO SYSTEME INTERNATIONAL handsfree chip Application Notes AN500-x AS2525
Contextual Info: Preliminary Application Note AN525  Austria Mikro Systeme International AG Application Note AN525: AS2525,AS2591 Single Chip Handsfree Phone +16 digit LCD driver demo board 1. Scope This application note describes operation and features of the AS2525 Single Chip handsfree telephone and

piher spain

Abstract: pt 10 lh 10K 10k spdt potentiometer PTC153 piher spain potentiometer PTC-10V thumbwheel Potentiometers PT-10 PTC-15 low torque potentiometer
Contextual Info: PTC-10 10 mm Cermet Potentiometer FEATURES – – – – – MECHANICAL SPECIFICATIONS Cermet resistive element. Dust proof enclosure. Plastic material according to UL94V-0 Alumina substrate. Also upon request: Wiper positioned at 50% or fully clockwise.

PTC 10k

Abstract: pt 10 lh 10K
Contextual Info: PT-10 10 mm Carbon Potentiometer FEATURES – – – – MECHANICAL SPECIFICATIONS Carbon resistive element Dust proof enclosure Polyester substrate Also upon request: Wiper positioned at 50% or fully clockwise. Supplied in magazines for automatic insertion.

Contextual Info: ES M A « FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 4A ,250V ,rDS ON = 0.610n The Discrete Products Operation of Harris Semiconductor has developed a series o1 Radiation Hardened MOSFETs

10496RL

Abstract: OWTC
Contextual Info: Integrated Device Technology, Inc. PRELIMINARY IDT10496RL IDT100496RL IDT101496RL SELF-TIMED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT STRAM FEATURES: • 16,384-wonds x 4-bit organization • Self-Timed, with registers on inputs and latches on outputs • Balanced Read/Write cycle time: 10/12/15 ns

LM101

Abstract: m101a LM201N A2201 LM101N LM201 equivalent M301AN lm201at LH2101AF LM 101
Contextual Info: L M 101 /A/201 /A /301 /A , LH2101 A/2201 A/2301 A -F,N ,N -14,T DESCRIPTION T h e LM101, LM201, LM 101A, LM 201A, and LM 301A are h ig h p e rfo rm a n ce o p e ra tio n a l a m p lifie rs fe a tu rin g hig h ga in , s h o rt c irc u it p ro te c tio n , s im p lifie d c o m pensa tion and

Contextual Info: FSJ9055D, FSJ9055R HARRIS SEMICONDUCTOR 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 55A, -60V, Tqs ON ~ 0.029S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

GAL20V8

Abstract: gal20v8 application
Contextual Info: rZ Z S C S -T H O M S O N * 7 # RjflD^iIUiOT OîOD®i GAL20V 8 E2CMOS PROGRAMMABLE LOGIC DEVICE • ELECTRICALLY ERASABLE CELL TECHNOLOGY — Reconfigurable Logic — Reprogrammable Cells — Guaranteed 100% Yields ■ HIGH PERFORMANCE E*CMOS TECHNOLOGY

Contextual Info: FSJ260D, FSJ260R 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 44A, 200V, rDS 0N = 0.050Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for comm ercial and m ilitary space

Contextual Info: SS FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A ,500V,rDS ON = 2.50£i The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: S HARfiSS FSF450D, FSF450R 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June1998 Features r D S O N —0.600ft • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

diode PJ 65 MG

Abstract: 5a 12v regula
Contextual Info: 33 FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, rDS 0N = 0.460i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 70A, 100V, rDS ON = 0.022£i The Discrete Products Operation ot Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: W A R D 'S FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 3A, 500V, Fd S ON = 2.70S1 The Discrete Products O peration of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 1M 256Kx 4-BIT SRAM PRELIMINARY IDT10514 IDT100514 IDT101514 FEATURES: DESCRIPTION: • • • • • • • The IDT10 5 1 4 ,1DT100514 and IDT101514 are 1,048,576bit high-speed BiCEMOS ECL static random access memo­

Contextual Info: FSS9130D, FSS9130R FR HARRIS S E M I C O N D U C T O R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 6A, -100V, rQg oN = 0«660il The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

5a 12v regula

Contextual Info: FSL9130D, FSL9130R HARRIS S E M I C O N D U C T O R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features • Description 5A, -100V, roS ON = 0,68012 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event

250JIS

Contextual Info: GBü à ttm FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 18A, 250V, rDS 0N = 0.170Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs

Contextual Info: O FSS234D, FSS234R W ^ R R is 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space appli­

T218N

Abstract: aeg tt 18 n 1200 T218 AEG T 51 N 1200
Contextual Info: 0 0 2 9 4 2 6 A E G CORP ' fil DE | □ □ S ti4 E t. D 0 0 b l4 E □ | T218N Typenreihe/Type ränge_T218N Elektrische Eigenschaften 400 * 600 800 1000 1100 1200 1400 1600 Electrical properties Höchstzulässige Werte U d r m i U r r m Periodische Vorwärts-und

ifr 150 mosfet

Contextual Info: ¡ f i H R R U U S E M I C O N D U C T O R FSL913AOD, FSL913AOR I S 7 A , -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features • 7A, -100V, Description = 0.300U • Total Dose - Meets Pre-RAD Specifications to 100K RAD Si

SL13A

Contextual Info: FSL 13A O D , H A R R IS S E M I C O N D U C T O R F SL 13A O R 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 9 A , 1 0 0 V , Tq s O N = 0.1 s o n The Discrete Products Operation of Harris Semiconductor

Contextual Info: 3 3 W A R F ? FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 100V, r DS ON = 0.230Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSL9110D, FSL9110R CD W ^ is 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 2 .5 A ,-1 0 0 V ,rD S o N = 1-30£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs