PT 30 040 PA Search Results

rqva 041

Abstract: 004-AB QMAT503 rqma100 005AF
Contextual Info: Catalogue RK 84-10 E ASEA Edition 1 June 1975, File R, Part 1 Temperature monitoring system type RANVA M easures the tem perature at up to 30 d ifferent points. The m onitoring range is steplessly ad­ justable on each m onitor Indicates exceeded tem perature on a

tinnerman

Abstract: IFFM 18 M-801
Contextual Info: 100/600 Seríes Incandescent Neon and LED Panel Mount Indicators Special Features • Built-in T1 3/4 incandescent, T2 neon bulbs, orT1 3/4 LEDs / • Standard termination— 2" stranded insulated leads or bi-pins other lead lengths available upon request

Contextual Info: 100/600 Series Incandescent Neon and LED Panel Mount Indicators Special Features • Built-in T1 3/4 incandescent, T2 neon bulbs, or T1 3/4 LEDs • Standard termination—2˝ stranded insulated leads or bi-pins other lead lengths available upon request

H524

Contextual Info: 100/600 Series Incandescent Neon and LED Panel Mount Indicators PICK UP NEGATIVE Special Features • Built-in T1 3/4 incandescent, T2 neon bulbs, or T1 3/4 LEDs • Standard termination—2˝ stranded insulated leads or bi-pins other lead lengths available upon request

tinnerman

Abstract: c2a neon ac-dc bulb circuits led bulb H529 M522 M801
Contextual Info: 100/600 Series Incandescent Neon & LED Panel Mount Indicators - RoHS Compliant Special Features • Built-in T1 3/4 incandescent, T2 neon bulbs, or T1 3/4 LEDs • Standard termination—2˝ stranded insulated leads or bi-pins other lead lengths available upon request

TO220H

Abstract: 414x
Contextual Info: ADVANCED POUER TECHNOLOGY 06E D | Ü2S71D1 OOOQatO 3 | T -3 1 -IS - APT4007FN 400V 60A 0.07 Q APT3507FN 350V 60A 0.07 Q P O W E R M O S IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol Parameter VDSS All Ratings: Tc = 25°C unless otherwise specified.

PAG.562.04C

Contextual Info: Accessories PAG-PLG Insulator for crimp contacts male / white marking Contact configuration M0.2 M0.4 M0.5 M0.6 M0.7 M0.8 PAG-PKG Crimp contacts, kit with the number of contacts in a tube female / red marking Insulator part number For male contact For female contact

Contextual Info: Accessories PAG-PLG Insulator for crimp contacts male / white marking Contact configuration M0.2 M0.4 M0.5 M0.6 M0.7 M0.8 PAG-PKG Crimp contacts, kit with the number of contacts in a tube female / red marking Insulator part number Male contact Female contact

F050

Abstract: 161se
Contextual Info: PP 139-166 Pushbutton.qxd 5/8/02 9:41 AM Page 159 S E R I E S VM SWITCHES SNAP ACTION SWITCH SPECIFICATIONS Contact Rating: Gold .4VA max. @ 20 VDC or VAC Max. .1 Amps @ 48 VDC 3 Amps @ 125/250 VAC-UL, CUL, VDE 6 Amps @ 125/250 VAC-UL, CUL, VDE 10 Amps @ 125/250 VAC-UL, CUL, VDE

108j capacitor

Contextual Info: PRECISION POWER WIREWOUND RESISTORS SILICONE COATED 0.5W TO 50 W ATT_ 100 SERIES • ■ ■ ■ ■ Low cost delivery from stock see p. 4 W idest selection in the industry! Wide resistance range: 0.0050 to 1MegO, tolerances to ±0.01% Available on exclusive ‘SW IFT ’ program

Contextual Info: SR020PT CHENMKO ENTERPRISE CO.,LTD THRU SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 - 60 Volts SR060PT CURRENT 1.0 Ampere FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low switching noise * Low forward voltage drop

Contextual Info: 5SDD 06D6000 5SDD 06D6000 Old part no. DV 817-630-60 High Voltage Diode Properties Key Parameters V RRM = 6 000 I FAVm = 662 I FSM = 10 500 V TO = 1.066 rT = 0.778 Low forward voltage drop Low recovery charge High operating temperature Low leakage current

5sdd06d6000

Contextual Info: 5SDD 06D6000 5SDD 06D6000 Old part no. DV 817-630-60 High Voltage Diode Properties § Low forward voltage drop § Low recovery charge § High operating temperature § Low leakage current Key Parameters = 6 000 V RRM = 662 I FAVm = 10 500 I FSM = 1.066 V TO

662 marking

Abstract: 1N759A LDZ759A LDZ759AT
Contextual Info: PRODUCT DATA Micro International, Inc PART NUMBER LDZ759A and LDZ759AT Micro-LID Zener Diode Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com sales@microlid.com Micro-LID Zener Diodes

BFR91 transistor

Abstract: BFR91 LDTBFR91 LDTBFR91T
Contextual Info: PRODUCT DATA Micro International, Inc PART NUMBER LDTBFR91 and LDTBFR91T Micro-LID NPN Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com sales@microlid.com Micro-LID Transistors

TPM1919-40

Abstract: SO47 TPM1919-40-311
Contextual Info: TPM1919-40-311 FEA TU RES: • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE P 1dB = 47.0 dB m at 1.9 GHz ■ HIGH GAIN G 1dB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS SYMBOL Output Power at 1dB Compression Point

RO4003

Abstract: 293D105X0035B2T LL1005-FH2N2S LL1608-FH27NK LP3000SOT89 ca sma 2064-000-00
Contextual Info: EB3000SOT89AA LP3000SOT89 1.85 GHZ POWER EVALUATION BOARD • FEATURES ♦ ♦ ♦ ♦ 30 dBm Output Power 10 dB Associated Gain 1.8 dB Noise Figure SOT89 Surface Mount Package EB3000SOT89AA EVALUATION BOARD • DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, reactively-matched, dual-biased, low-noise, high dynamicrange amplifier. Its center operating frequency is 1.85 GHz and has a representative output power of

Contextual Info: FLC311MG-4 FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 34.8dBm Typ. High Gain: G ^ b = 9.5dB(Typ.) High PAE: r iadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC311MG-4 is a power GaAs FET that is designed for

2n3904 transistor

Abstract: 2N3904, transistor 2N3904 die 662 marking 2N3904 transistor data sheet free download 2N3904 LDT3904 LDT3904T
Contextual Info: PRODUCT DATA Micro International, Inc PART NUMBER LDT3904 and LDT3904T Micro-LID NPN Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com sales@microlid.com Micro-LID Transistors

662 marking

Abstract: 2N3906 LDT3906 LDT3906T
Contextual Info: PRODUCT DATA Micro International, Inc PART NUMBER LDT3906 and LDT3906T Micro-LID PNP Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com sales@microlid.com Micro-LID Transistors

Contextual Info: 147 Central Avenue Hackensack, New Jersey 07601 Tel: 201-489-8989 • Fax: 201-489-6911 CHICAGO MINIATURE LAMP, INC. WHERE INNOVATION COMES TO LIGHT 4305H Solid State LED Lamps-Ultra Brite 120 mcd T-1 3/4 5mm D E S C R I PT I O N A N D F E AT U R E S .217±.012

2n3996 equivalent transistor

Abstract: transistor sd 965
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SWITCHING SILICON TRANSISTOR

Contextual Info: DRAWING MADE IN KOREAN PROJECTION DIMENSIONS IN USStíS . MM CUSTOMER DRAWING — E7- - TYP i r- pT TYP / RO. s-7 -— 7— - ^ 0 . 3 <ALL ARDUND —3 A TO BE MEASURED WITHIN 2nm FORM EIE 2. THE MATING PLUG HOUSING PART NUMBER' 174044 3. APPLICABLE CONTACT PART NUMBER.1 173682

Contextual Info: WWW STEWART CONNECTOR RD. S, BOX SOSO GLEN ROCK PENNSYLVANIA 173S7 PART NO. S S - 6 4 8 B S - A - N F EIGHT CONTACT, EIGHT POSTION, SHIELDED JACK "-N F ” NON-FLANGE - .850 [21.59] M A X- - 1 X c s \ s P-T o> ro o lO in / □ □ .040 [1.02]—