PTF180901 Search Results

smd TRANSISTOR 1702

Contextual Info: Preliminary PTF180901A High Power RF LDMOS Field Effect Transistor 90 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180901A is a 90-watt, internally-matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.

PTF180101S

Abstract: PTF180901E PTF180901F
Contextual Info: Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 Performance One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands. This device operates at 47% efficiency with 13.5 dB of gain and produces 115 W, P -1dB . This high-gain

smd TRANSISTOR 1702

Abstract: MARKING SMD TRANSISTOR DQ
Contextual Info: PTF180901 High Power RF LDMOS FET 90 W, 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180901 is a 90 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.

P220E

Abstract: infineon smd package
Contextual Info: PTF180901E PTF180901F Thermally-Enhanced High Power RF LDMOS FETs 90 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180901E and PTF180901F are thermally-enhanced, internallymatched 90-watt GOLDMOS FETs intended for EDGE applications in the DCS/PCS bands. Thermally-enhanced packaging provides the coolest

Contextual Info: PTF180901 High Power RF LDMOS FET 90 W, 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180901 is a 90 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.

PTF180101S

Contextual Info: Product Brief PTF180101S GSM/EDGE/WCDMA RF Power FET The PTF180101S Performance A multi-purpose driver, the PTF180101S is suitable for GSM/EDGE, CDMA2000 and WCDMA applications. The PTF180101S operates well in the DCS, PCS or UMTS bands. This device operates at 50% efficiency