PU ENAMELLED COPPER WIRE Search Results

Contextual Info: HM53-208R0VLF summary material content, BI Technologies Corporation Index Item Material Name TOROID CORE Iron Powder 2 COIL Polyurethane Enamelled Copper Magnet Wire 3 SOLDER Lead Free Solder 1 Element Composition CAS No Fe Resin Coating Lubricant Polyester

Contextual Info: HM53-001R6VLF summary material content, BI Technologies Corporation Index Item Material Name TOROID CORE Iron Powder 2 COIL Polyurethane Enamelled Copper Magnet Wire 3 SOLDER Lead Free Solder 1 Element Composition CAS No Fe Resin Coating Lubricant Polyester

Contextual Info: HM53-101R6VLF summary material content, BI Technologies Corporation Index Item Material Name TOROID CORE Iron Powder 2 COIL Polyurethane Enamelled Copper Magnet Wire 3 SOLDER Lead Free Solder 1 Element Composition CAS No Fe Resin Coating Lubricant Polyester

Contextual Info: HM53-60130HLF summary material content, BI Technologies Corporation Index Item Material Name TOROID CORE Iron Powder 2 COIL Polyurethane Enamelled Copper Magnet Wire 3 SOLDER Lead Free Solder 1 4 ADHESIVE Epoxy Resin Element Composition CAS No Fe Resin Coating

Contextual Info: HM53-40360HLF summary material content, BI Technologies Corporation Index Item Material Name TOROID CORE Iron Powder 2 COIL Polyurethane Enamelled Copper Magnet Wire 3 SOLDER Lead Free Solder 1 4 ADHESIVE Epoxy Resin Element Composition CAS No Fe Resin Coating

Contextual Info: HM53-50370HLF summary material content, BI Technologies Corporation Index Item Material Name TOROID CORE Iron Powder 2 COIL Polyurethane Enamelled Copper Magnet Wire 3 SOLDER Lead Free Solder 1 4 ADHESIVE Epoxy Resin Element Composition CAS No Fe Resin Coating

Contextual Info: HM53-30150HLF summary material content, BI Technologies Corporation Index Item Material Name TOROID CORE Iron Powder 2 COIL Polyurethane Enamelled Copper Magnet Wire 3 SOLDER Lead Free Solder 1 4 ADHESIVE Epoxy Resin Element Composition CAS No Fe Resin Coating

A 673 C2 transistor

Abstract: RF POWER TRANSISTOR NPN vhf BLW30
Contextual Info: PH IL IP S INTERNATIONAL Philips Semiconductors_ LSE D m 711002b 00^31 0^ 3bl • PHIN _ Product specification VHF power transistor BLW30 QUICK REFERENCE DATA RF performance at Tr t = 25 °C in a common emitter test circuit.

mcd206

Abstract: philips Trimmer 60 pf BLV13 MCD211 C106W
Contextual Info: Philips Sem iconductors VHF power transistor • bSE D DQbSûES P H IL IP S T ll PHI N Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. IN T E R N A TIO N A L NPN silicon planar epitaxial transistor encapsulated in a 4-lead

SOT123 Package

Abstract: SOT123 BLF244 International Power Sources SOT-123
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability

Transistor BLF244

Abstract: philips Trimmer 60 pf pu enamelled copper wire BLF244 capacitor 104 ceramic bje 133 resistor
Contextual Info: Philips Semiconductors bbSBIBl D D E ' m M ST7 M A P X Product specification VHF power MOS transistor BLF244 N FEATURES AMER P H IL IP S /D IS C R E T E b 'i E PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability

Contextual Info: Philips Semiconductors WM bb 5 3 R 31 Q02RR6Q 536 M APX Product specification VHF power MOS transistor BLF246 N AUER PHILIPS/DISCRETE FEATURES bRE PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability

Philips 2222 capacitor

Abstract: philips capacitor philips capacitor 2222
Contextual Info: Philips Semiconductors bbS 3^31 Q Q S T f i ? 1! T35 M A P X ^ P r o d u c ts p e c ific a tio n HF/VHF power MOS transistor ^ — BLF177 N AMER PHILIPS/DISCRETE b^E D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control

transistor tt 2222

Abstract: TT 2222 enamelled copper wire tables 2222 123 capacitor philips pu enamelled copper wire TL 2222 4312 020 36640 ferroxcube wideband hf choke 22 nF, 63 SOT123 Package
Contextual Info: Philips Semiconductors Product specification HF power MOS transistor PHILIPS T -3 ^ -// INTERNATIONAL FEATURES 5bE D I 711002b DOMBbTM BLF145 437 IPHIN PIN CONFIGURATION • High power gain • Low noise figure • Good thermal stability • Withstands full load mismatch.

choke marking nb 03

Abstract: SOT121 Package BLF246
Contextual Info: Philips Semiconductors a tiS 3 R 3 1 0 0 5 TRÔD 536 APX Product specification VHF power MOS transistor BLF246 b'ìE i> N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability

Contextual Info: Philips Semiconductors Preliminary »pacification T HF/VHF power MOS transistor PHILIPS INT ER NATIONAL FEATURES - 3 V - 0 5 BLF221B 5bE P • 7110fl5b □ D M 3 7 4 el 37M H P H I N PIN CONFIGURATION • High power gain • Easy power control • Gold metallization

7z31

Abstract: Philips 809 08003 SOT123 Package sot123 PINNING-SOT123 BLF242 VHF transmitter circuit T-39-07
Contextual Info: Philips Semiconductors Product specification HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • Sb E 7 13 c! ' t0 7 ' BLF242 D • 711Dfl2fci 0 0 4 3 7 6 4 47T ■ P H I N PIN CONFIGURATION High power gain Low noise Easy power control

marking code 7Gs

Abstract: 3 DG 1008 BLF147 71005 philips resistor 2322-153 SOT121 Package
Contextual Info: Product «pacification Philips Semiconductor» T -J ^ ~ /5 B L F 1 4 7 VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • 5bE D • 711Dfl2b 0DM3703 27T BIPHIN PIN CONFIGURATION High power gain Low intermodulation distortion Easy power control

Contextual Info: Philips Semiconductors • I bbS3T31 DDS^flSS MTl M A P * Product specification BLF147 VHF power MOS transistor - AnER PHIi-lPS/]>ISCRETE FEATURES bTE J> PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability

MCA114

Abstract: BLF147 MCA122 71005 k 3531 transistor transistor K 3531
Contextual Info: Philips Semiconductors bbS 3 T 31 D0 ETÔ55 M T1 • A P y Product specification BLF147 VHF power MOS transistor ~ A t 1 E R PhiA-IPS/]>ISCRETE blE » PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control

Contextual Info: N AtfER PHJLIPS/DISCRETE APX bbS3^31 D03TD32 b47 b'lE ]> BLV38 A VHF LINEAR PUSH-PULL POW ER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VH F television transmitters vision or sound amplifiers . Features

Contextual Info: N A HER PHILIPS/DISCRETE b^E bbS 3 ^ 3 ]. OOEflflO'l bEM H A P X D Philips Sem iconductors_ _ Product specification UHF power transistor FEATURES • Internal input matching, to achieve wide bandwidth • Ballasting resistors for optimum

MCD195

Abstract: UHF POWER TRANSISTOR UHF POWER BLT53 MCD201
Contextual Info: bTE T> N AUER P H I L I P S / D I S C R E T E bbS3^3]i GQ2Ö744 Ö4fl M A P X tjciiiiwudUUCIOrS _Product speciricauon UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures

Contextual Info: N AUER PHILIPS/MSCRETE b^E » • bbS 3131 0 0 2 ^ 1 1 0 'lb? « A P X BLV90 _ J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile