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    nec A1394

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    703078AY

    Abstract: 70F3079AY NEC D76 70307 U14665EJ4V0UD uPD703075AY uPD703076AY uPD703078AY uPD703078Y uPD703079YGC
    Contextual Info: User’s Manual V850/SF1 32-Bit Single-Chip Microcontroller Hardware µPD703075AY µPD703075AY A µPD703076AY µPD703076AY(A) µPD703078AY µPD703078AY(A) µPD703078Y µPD703079AY µPD703079AY(A) µPD703079Y Document No. U14665EJ4V0UD00 (4th edition) Date Published September 2003 N CP(K)


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    V850/SF1 32-Bit PD703075AY PD703075AY PD703076AY PD703076AY PD703078AY PD703078AY PD703078Y PD703079AY 703078AY 70F3079AY NEC D76 70307 U14665EJ4V0UD uPD703075AY uPD703076AY uPD703078AY uPD703078Y uPD703079YGC PDF

    QUICKLOGIC SDIO Host

    Contextual Info: PolarPro Solution Platform Family Data Sheet •••••• Family of Solution Platforms Integrating Low Power Programmable Fabric and Embedded SRAM Platform Highlights Flexible Programmable Fabric • 8 to 240 customizable building blocks CBBs (see


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    6B15

    Abstract: 554-1 2SC5800
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA895TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz


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    PA895TD S21e2 2SC5800) 2SC5800 PA873TD PA873TD-T3 6B15 554-1 2SC5800 PDF

    536EP

    Abstract: UPD70F3079AYGC-8EU tsc102 703078AY FA100GC-8EU FA-100GC-8EU
    Contextual Info: User’s Manual TM V850/SF1 32-Bit Single-Chip Microcontroller Hardware µPD703075AY µPD703076AY µPD703078AY µPD703078Y µPD703079AY µPD703079Y µPD70F3079AY µPD70F3079Y Document No. U14665EJ3V0UD00 3rd edition Date Published January 2003 N CP(K) 2000, 2003


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    V850/SF1 32-Bit PD703075AY PD703076AY PD703078AY PD703078Y PD703079AY PD703079Y PD70F3079AY PD70F3079Y 536EP UPD70F3079AYGC-8EU tsc102 703078AY FA100GC-8EU FA-100GC-8EU PDF

    MSL260G

    Abstract: MSL-260-G D0806 R0807 T0803 D0802 D0807 RDD0804 D0808 5 pin reset ic ARB
    Contextual Info: Using the Intel 80960 CA with the PCI 9060 PCI evaluation board, Schematics PLX TECHNOLOGY PCI9060 Demo Board I/O MAP 06/16/96 PCI Configuration Registers Address BIT Function 0x00000000 0-15 Vendor ID, Allocated to PLX by PCI SIG (Read-only) (Default = 10B5)


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    PCI9060 0x00000000 0x00000002 0x00000004 100ns 200ns 300ns 80960CA) PCLK1-33 MSL260G MSL-260-G D0806 R0807 T0803 D0802 D0807 RDD0804 D0808 5 pin reset ic ARB PDF

    Contextual Info: Data Sheet NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications.


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    NESG2021M05 R09DS0034EJ0300 PDF

    ST3215

    Contextual Info: User’s Manual 16 RL78/G13 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


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    RL78/G13 16-Bit R01UH0146EJ0310 ST3215 PDF

    2SC5010

    Abstract: 2SC5435 2SC5435-T1 marking tk
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5010 • Flat-lead 3-pin thin-type ultra super minimold package


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    2SC5435 2SC5010 2SC5435-T1 2SC5010 2SC5435 2SC5435-T1 marking tk PDF

    DCS1800

    Abstract: NE5520279A NE5520279A-T1 NE5520279A-T1A VP215 ldmos nec
    Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology


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    NE5520279A NE5520279A DCS1800 NE5520279A-T1 NE5520279A-T1A VP215 ldmos nec PDF

    2SC5186

    Abstract: 2SC5436 2SC5436-T1 nec 7440
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5186 • Flat-lead 3-pin thin-type ultra super minimold package


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    2SC5436 2SC5186 2SC5436-T1 2SC5186 2SC5436 2SC5436-T1 nec 7440 PDF

    2SC5432-T1

    Abstract: 2SC5006 2SC5432
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5006 • Flat-lead 3-pin thin-type ultra super minimold package


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    2SC5432 2SC5006 2SC5432-T1 2SC5432-T1 2SC5006 2SC5432 PDF

    transistor T1J

    Abstract: NESG2101M05-T1 NESG2101M05
    Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification


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    NESG2101M05 PU10190EJ02V0DS transistor T1J NESG2101M05-T1 NESG2101M05 PDF

    NESG2031M05

    Abstract: NESG2031M05-T1
    Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz


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    NESG2031M05 PU10189EJ02V0DS NESG2031M05 NESG2031M05-T1 PDF

    ic 4074

    Abstract: 2SC5437 2SC5195 2SC5437-T1
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5437 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5195 • Flat-lead 3-pin thin-type ultra super minimold package


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    2SC5437 2SC5195 2SC5437-T1 ic 4074 2SC5437 2SC5195 2SC5437-T1 PDF

    PU101

    Abstract: 12x12 bga thermal resistance QL1P1000 100C QL1P100 QL8050 jedec package TFBGA 12 256-LBGA QUICKLOGIC SDIO Host
    Contextual Info: PolarPro Solution Platform Family Data Sheet •••••• Family of Solution Platforms Integrating Low Power Programmable Fabric and Embedded SRAM Platform Highlights Flexible Programmable Fabric • 8 to 240 customizable building blocks CBBs (see


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    AC82PM45

    Abstract: AC82GM45 KB926 AF82801IBM SLB8Q N10M-GE1-S G545A1 NV10M-GS tps51620 LA-5081P KIWA7
    Contextual Info: A B C D E 1 1 KIWA7/A8 2 2 Schematics Document Mobile Penryn uFCPGA with Intel Cantiga_GM/PM+ICH9-M core logic 3 3 REV:0.4 4 4 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2008/03/25 Deciphered Date 2008/04/ Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


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    R1089, C1162 C1163, C1164 C1165 R1095 R1090, R1091, R1092, R1093 AC82PM45 AC82GM45 KB926 AF82801IBM SLB8Q N10M-GE1-S G545A1 NV10M-GS tps51620 LA-5081P KIWA7 PDF

    LA-4082P

    Abstract: G6179 XDR 1 NVIDIA schematics kb926 tps51125 Compal Electronics la-6121P Montevina compal notebook schematics FBMA-L11-201209-221LMA30T TPS2231
    Contextual Info: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Penryn uFCPGA with Intel Cantiga_PM+ICH9-M core logic 3 3 LA-4082P Vader Discrete NB9P-GS,NB9M-GE 2009-01-07 Rev 1.0_2F 4 4 2006/02/13 Issued Date Compal Electronics, Inc. Compal Secret Data


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    LA-4082P A4082 G6179 XDR 1 NVIDIA schematics kb926 tps51125 Compal Electronics la-6121P Montevina compal notebook schematics FBMA-L11-201209-221LMA30T TPS2231 PDF

    JBK00 LA4092P

    Abstract: LA-4092P JBK00 KB926 tps51125 JBK00 LA4092P 1.0 FBMA-L11-201209-221LMA30T kb926qf RT8204 LA-4111P
    Contextual Info: A B C D E 1 1 Compal confidential 2 2 JBK00 LA-4092P Schematics Document Mobile AMD S1G2 CPU with ATI RX781 & SB700 core logic with M82-S 3 3 2008-02-20 REV:0.4 4 4 Compal Secret Data Security Classification 2007/08/02 Issued Date 2008/08/02 Deciphered Date


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    JBK00 LA-4092P RX781 SB700 M82-S JBK00 LA4092P KB926 tps51125 JBK00 LA4092P 1.0 FBMA-L11-201209-221LMA30T kb926qf RT8204 LA-4111P PDF

    m7101

    Abstract: hp 2140 circuit diagram of motherboard uli m1573 m1573 m1573 a1 AOS3413 schematic diagram lcd tv sharp inverter ATI-RS480M M1573M keyboard and touchpad schematic
    Contextual Info: SERVICE MANUAL FOR 8317 BY: Sinty Zhang Repair Technology Research Department /EDVD Jun.2005 / R01 8317 N/B Maintenance Contents 1. Hardware Engineering Specification ……………………………………………………………………… 4 1.1 Introduction ……………………………………………………………………………………………………………….


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    M1573 U1014 J1014 Q1027 R1219 R1179 R1176 R1195 R1371 R1232 m7101 hp 2140 circuit diagram of motherboard uli m1573 m1573 a1 AOS3413 schematic diagram lcd tv sharp inverter ATI-RS480M M1573M keyboard and touchpad schematic PDF

    NS692405

    Abstract: KB926 tps51125 KB926 sequence LA-4102p FBMA-L11-201209-221LMA30T kb926qf SLG8SP553 compal HP Keyboard KB 0316
    Contextual Info: A B C D E 1 1 Compal confidential Schematics Document Mobile Penryn uFCPGA with Intel Cantiga_PM+ICH9-M core logic 2 2 2008-02-25 3 3 www.kythuatvitinh.com 4 4 Compal Secret Data Security Classification 2008/02/25 Issued Date 2008/02/25 Deciphered Date Title


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    LA-4102P NS692405 KB926 tps51125 KB926 sequence FBMA-L11-201209-221LMA30T kb926qf SLG8SP553 compal HP Keyboard KB 0316 PDF

    LA-4111p

    Abstract: ENE KB 926 fcbga528 KB926 88e8042 Compal Electronics tps51125 compal PC319 9H03200413
    Contextual Info: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile AMD S1G2 CPU with ATI RS780M NB & SB700(SB) core logic 3 3 2008-03-07 REV:0.4 4 4 Compal Secret Data Security Classification 2007/08/02 Issued Date 2008/08/02 Deciphered Date Title Compal Electronics, Inc.


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    RS780M SB700 LA-4111P LA-4111p ENE KB 926 fcbga528 KB926 88e8042 Compal Electronics tps51125 compal PC319 9H03200413 PDF

    2SC5437

    Abstract: 3-pin IC 7806 k 871
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA829TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


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    PA829TC 2SC5437) 2SC5437 PA829TC-T1 2SC5437 3-pin IC 7806 k 871 PDF