PU104 Search Results

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NE5500234

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

703078AY

Abstract: 70F3079AY NEC D76 70307 U14665EJ4V0UD uPD703075AY uPD703076AY uPD703078AY uPD703078Y uPD703079YGC
Contextual Info: User’s Manual V850/SF1 32-Bit Single-Chip Microcontroller Hardware µPD703075AY µPD703075AY A µPD703076AY µPD703076AY(A) µPD703078AY µPD703078AY(A) µPD703078Y µPD703079AY µPD703079AY(A) µPD703079Y Document No. U14665EJ4V0UD00 (4th edition) Date Published September 2003 N CP(K)

NESG3031M14

Abstract: NESG3031M14-A NESG3031M14-T3 NESG3031M14-T3-A
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz

NEM090603M-28

Abstract: T-91M
Contextual Info: PRELIMINARY DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090603M-28 N-CHANNEL SILICON POWER LDMOS FET FOR 75 W UHF-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NEM090603M-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for driver or final

nec 2501

Abstract: ic nec 2501 NESG250134 2501 NEC
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • This product is suitable for medium output power (800 mW) amplification

Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz

536EP

Abstract: UPD70F3079AYGC-8EU tsc102 703078AY FA100GC-8EU FA-100GC-8EU
Contextual Info: User’s Manual TM V850/SF1 32-Bit Single-Chip Microcontroller Hardware µPD703075AY µPD703076AY µPD703078AY µPD703078Y µPD703079AY µPD703079Y µPD70F3079AY µPD70F3079Y Document No. U14665EJ3V0UD00 3rd edition Date Published January 2003 N CP(K) 2000, 2003

ST3215

Contextual Info: User’s Manual 16 RL78/G13 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

2SC5800

Abstract: NESG2046M33 NEC JAPAN IC
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TD NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor

NESG2046M33

Abstract: NESG2107M33
Contextual Info: PRELIMINARY DATA SHEET NPN SiGe RF TWIN TRANSISTOR µPA880TS NPN SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, NESG2107M33) Q1: High gain SiGe transistor

uPC3223TB

Abstract: HS350 PC2710TB C3j marking marking c3j marking c1d PU10491EJ01V0DS
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

NS692405

Abstract: KB926 tps51125 KB926 sequence LA-4102p FBMA-L11-201209-221LMA30T kb926qf SLG8SP553 compal HP Keyboard KB 0316
Contextual Info: A B C D E 1 1 Compal confidential Schematics Document Mobile Penryn uFCPGA with Intel Cantiga_PM+ICH9-M core logic 2 2 2008-02-25 3 3 www.kythuatvitinh.com 4 4 Compal Secret Data Security Classification 2008/02/25 Issued Date 2008/02/25 Deciphered Date Title

TI121

Abstract: NEC d464 703088Y alu 9308 d TI120 T3168 PD703088 813 P121 GR GE CR120 BY728
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

grm36 murata

Abstract: GRM36 R04003 RR0816 TFL0510
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

NEM090603M-28

Abstract: d4060 ldmos nec
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

UPC2712TB

Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

NEM091803S-28

Abstract: ldmos nec
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

DFT301-801X7R102S50

Abstract: DFT301 DFT301-801X7R DFT301801X7R GRM39 GRM40 Murata GRM39
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NE5500434

Abstract: HS350 NE5500434-AZ
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PC2710TB

Abstract: UPC3223TB UPC3223TB-E3
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社