PUA3213 Search Results

Contextual Info: Power Transistor Arrays PUA3213 PU3213 Silicon PNP epitaxial planar type For power amplification/switching Complementary to PUA3113 (PU3113) Unit: mm 9.5±0.2 1.65±0.2 • Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE

PU3113

Abstract: PU3213 PUA3113 PUA3213
Contextual Info: Power Transistor Arrays PUA3213 PU3213 Silicon PNP epitaxial planar type For power amplification/switching Complementary to PUA3113 (PU3113) Unit: mm 8.0±0.2 Solder Dip 5.3±0.5 4.4±0.5 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE

Contextual Info: Power Transistor Arrays PUA3213 PU3213 Silicon PNP epitaxial planar type For power amplification/switching Complementary to PUA3113 (PU3113) Unit: mm M Di ain sc te on na tin nc ue e/ d 9.5±0.2 1.65±0.2 • Features 4.0±0.2 8.0±0.2 20.2±0.3 Solder Dip

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and