PULSE POWER TRANSISTOR Search Results

laser SG-2000

Abstract: PULSED LASER DIODE DRIVER siemens 9606 laserdiode 905 905nm Plastic Pulsed Laser Diode PGEW2S09 Laser Diode 850nm 1300nm pulsed laser transmitter 1550 nm Laser-Diode 905nm 1S12
Contextual Info: Optoelectronic components Features max. pulse power ≥ 150 W @ 910 nm pulse lengths from < 1 ns to > 160 ns short rise and fall times max. pulse amplitude 80 – 100 A compact housing complete unit – no additional equipment needed adjustable pulse power optional

PH1090-550S

Contextual Info: Avionics Pulsed Power Transistor 550 Watts, 1030-1090 MHz, 10µs Pulse, 1 % Duty PH1090-550S PH1090-550S Avionics Pulsed Power Transistor - 550 Watts, 1030-1090 MHz, 10µs Pulse, 1% Duty 1 Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications

MSC1550M

Abstract: pulse power transistor
Contextual Info: GAE GREAT AMERICAN ELECTROINCS MSC1550M Silicon NPN pulse power transistor MSC1550M is designed for common base applications in short pulse output amplifier stages of telemetry, navigation systems and DME systems. Output Power: Frequency Range: Voltage: Package Type:

Radar

Abstract: diode gp 429 HV400
Contextual Info: HVV1012-100 HVV1012-100 L-Band Avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company! L-Band Avionics MHz, Pulsed10µs Power Transistor 1025-1150 Pulse, 1% Duty L-Band Avionics Pulsed Power Transistor HVV1012-100 1025-1150 MHz, 10µs Pulse, 1% Duty

diode gp 429

Abstract: HV400
Contextual Info: HVV1012-100 HVV1012-100 L-Band Avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company! L-Band Avionics MHz, Pulsed10µs Power Transistor 1025-1150 Pulse, 1% Duty L-Band Avionics Pulsed Power Transistor HVV1012-100 1025-1150 MHz, 10µs Pulse, 1% Duty

L-Band 1200-1400 MHz

Abstract: diode gp 429 Radar x band radar HV400
Contextual Info: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor Designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak

motorola MRF

Abstract: Motorola transistors MRF 150 watts power amplifier layout motorola MRF 220 motorola rf device motorola rf
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF1150MA MRF1150MB The RF Line Microwave Pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. 150 W PEAK, 960-1215 MHz MICROWAVE POWER

IL6083

Abstract: IL6083N IL6083N-01 il6083 APPLICATION capacitor 68nf UT100 150hm
Contextual Info: IL6083, IL6083-01 PULSE WIDTH MODULATION MICROCIRCUIT OF POWER MOS TRANSISTOR Description of Main Functions: Microcircuit is the integrated circuit of the pulse width modulation controller for control of the power Nchannel MOS transistor, used a switch. Controller is

Rf amplifier with frequency 1150 MHZ 20 db gain

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10150 . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak

common base amplifier

Contextual Info: GAE GREAT AMERICAN ELECTROINCS MSC1075M/M RP0912-75 Silicon NPN pulse power transistor MSC1075M/MRP0912-75 is designed for Class B and C common base amplifier applications in short pulse transmitters or radio location stations, telemetry and DME systems. Output Power:

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF1004MB Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • 4.0 W, 960-1215 MHz MICROWAVE POWER

transistor j380

Abstract: motorola J122 j392 transistor j122 J122 transistor j113 equivalent ic 65 MHZ rf transmitter ON SEMICONDUCTOR J122
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 Designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak

RF power amplifier MHz

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor . . . designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak

J135

Abstract: 552 transistor motorola J13-5
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF10502 Microwave Pulse Power Transistor Designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. 500 W PEAK 1025 – 1150 MHz MICROWAVE POWER

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF1015MB Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. 15 W PEAK , 960-1215 MHz MICROWAVE POWER

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE PULSE WIDTH MODULATION CONTROL CIRCUIT Switchmode Pulse Width Modulation Control Circuit The TL494 is a fixed frequency, pulse width modulation control circuit designed primarily for SWITCHMODE power supply control.

Contextual Info: FSL137MRIN Green-Mode Fairchild Power Switch FPS Features Description • Advanced Soft Burst Mode for Low Standby Power and Low Audible Noise •  Random Frequency Fluctuation (RFF) for Low EMI   Pulse-by-Pulse Current Limit The FSL137MRIN is an integrated Pulse Width

FSL137MRIN

Abstract: smps drain 6 7 8
Contextual Info: FSL137MRIN Green-Mode Fairchild Power Switch FPS Features Description • Advanced Soft Burst Mode for Low Standby Power and Low Audible Noise •  Random Frequency Fluctuation (RFF) for Low EMI   Pulse-by-Pulse Current Limit The FSL137MRIN is an integrated Pulse Width

FSL137MRIN

Contextual Info: FSL137MRIN Green-Mode Fairchild Power Switch FPS Features Description • Advanced Soft Burst Mode for Low Standby Power and Low Audible Noise •  Random Frequency Fluctuation (RFF) for Low EMI   Pulse-by-Pulse Current Limit The FSL137MRIN is an integrated Pulse Width

RADAR

Abstract: PH1214-25M transistor 25 4 ghz transistor
Contextual Info: Radar Pulsed Power Transistor 25 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-25M PH1214-25M Radar Pulsed Power Transistor - 25 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor

PH1214-220M

Abstract: Radar transistor 220
Contextual Info: Radar Pulsed Power Transistor 220 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-220M PH1214-220M Radar Pulsed Power Transistor - 220 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor

Contextual Info: Avionics Pulsed Power Transistor PH1090-800S Preliminary 800 Watts, 1030-1090 MHz, 10 |is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

pin26

Abstract: J22 transistor PH1090-175L
Contextual Info: Avionics Pulsed Power Transistor 175 Watts, 1030-1090 MHz, 250µs Pulse, 10 % Duty PH1090-175L PH1090-175L Avionics Pulsed Power Transistor - 175 Watts, 1030-1090 MHz, 250µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor