PULSE POWER TRANSISTOR Search Results
PULSE POWER TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN |
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MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN |
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MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN |
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MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
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MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
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PULSE POWER TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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laser SG-2000
Abstract: PULSED LASER DIODE DRIVER siemens 9606 laserdiode 905 905nm Plastic Pulsed Laser Diode PGEW2S09 Laser Diode 850nm 1300nm pulsed laser transmitter 1550 nm Laser-Diode 905nm 1S12
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D-82140 laser SG-2000 PULSED LASER DIODE DRIVER siemens 9606 laserdiode 905 905nm Plastic Pulsed Laser Diode PGEW2S09 Laser Diode 850nm 1300nm pulsed laser transmitter 1550 nm Laser-Diode 905nm 1S12 | |
PH1090-550SContextual Info: Avionics Pulsed Power Transistor 550 Watts, 1030-1090 MHz, 10µs Pulse, 1 % Duty PH1090-550S PH1090-550S Avionics Pulsed Power Transistor - 550 Watts, 1030-1090 MHz, 10µs Pulse, 1% Duty 1 Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications |
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PH1090-550S PH1090-550S | |
MSC1550M
Abstract: pulse power transistor
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MSC1550M MSC1550M FO-85 pulse power transistor | |
Radar
Abstract: diode gp 429 HV400
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HVV1012-100 HVV1012-100 1025-1150Avionics 1025-1150MHz, 429-HVVi Radar diode gp 429 HV400 | |
diode gp 429
Abstract: HV400
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HVV1012-100 HVV1012-100 1025-1150Avionics 1025-1150MHz, 429-HVVi diode gp 429 HV400 | |
L-Band 1200-1400 MHz
Abstract: diode gp 429 Radar x band radar HV400
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HVV1214-075 HVV1214-075MHz, HVV1214-075 429-HVVi EG-01-PO08X4 L-Band 1200-1400 MHz diode gp 429 Radar x band radar HV400 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor Designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak |
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MRF10500 MRF10350 MRF10070 | |
motorola MRF
Abstract: Motorola transistors MRF 150 watts power amplifier layout motorola MRF 220 motorola rf device motorola rf
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MRF1150MA MRF1150MB motorola MRF Motorola transistors MRF 150 watts power amplifier layout motorola MRF 220 motorola rf device motorola rf | |
IL6083
Abstract: IL6083N IL6083N-01 il6083 APPLICATION capacitor 68nf UT100 150hm
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IL6083, IL6083-01 IL6083N IL6083N-01) IL6083 IL6083N IL6083N-01 il6083 APPLICATION capacitor 68nf UT100 150hm | |
Rf amplifier with frequency 1150 MHZ 20 db gainContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10150 . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak |
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MRF10500 MRF10150 MRF10150 Rf amplifier with frequency 1150 MHZ 20 db gain | |
common base amplifierContextual Info: GAE GREAT AMERICAN ELECTROINCS MSC1075M/M RP0912-75 Silicon NPN pulse power transistor MSC1075M/MRP0912-75 is designed for Class B and C common base amplifier applications in short pulse transmitters or radio location stations, telemetry and DME systems. Output Power: |
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MSC1075M/MRP0912-75 MSC1075M/MRP0912-75 FO-57C 25tion common base amplifier | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF1004MB Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • 4.0 W, 960-1215 MHz MICROWAVE POWER |
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MRF1004MB MRF1004MB | |
transistor j380
Abstract: motorola J122 j392 transistor j122 J122 transistor j113 equivalent ic 65 MHZ rf transmitter ON SEMICONDUCTOR J122
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MRF10350 MRF10350 transistor j380 motorola J122 j392 transistor j122 J122 transistor j113 equivalent ic 65 MHZ rf transmitter ON SEMICONDUCTOR J122 | |
RF power amplifier MHzContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor . . . designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak |
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MRF10500 376B-0erial MRF10150 RF power amplifier MHz | |
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J135
Abstract: 552 transistor motorola J13-5
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MRF10502 Collect450 MRF10502 J135 552 transistor motorola J13-5 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF1015MB Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. 15 W PEAK , 960-1215 MHz MICROWAVE POWER |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE PULSE WIDTH MODULATION CONTROL CIRCUIT Switchmode Pulse Width Modulation Control Circuit The TL494 is a fixed frequency, pulse width modulation control circuit designed primarily for SWITCHMODE power supply control. |
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TL494 1408P-L00-3CB TL494 | |
Contextual Info: FSL137MRIN Green-Mode Fairchild Power Switch FPS Features Description • Advanced Soft Burst Mode for Low Standby Power and Low Audible Noise • Random Frequency Fluctuation (RFF) for Low EMI Pulse-by-Pulse Current Limit The FSL137MRIN is an integrated Pulse Width |
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FSL137MRIN FSL137MRIN com/dwg/N0/N08F | |
FSL137MRIN
Abstract: smps drain 6 7 8
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FSL137MRIN FSL137MRIN smps drain 6 7 8 | |
FSL137MRINContextual Info: FSL137MRIN Green-Mode Fairchild Power Switch FPS Features Description • Advanced Soft Burst Mode for Low Standby Power and Low Audible Noise • Random Frequency Fluctuation (RFF) for Low EMI Pulse-by-Pulse Current Limit The FSL137MRIN is an integrated Pulse Width |
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FSL137MRIN FSL137MRIN | |
RADAR
Abstract: PH1214-25M transistor 25 4 ghz transistor
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PH1214-25M PH1214-25M RADAR transistor 25 4 ghz transistor | |
PH1214-220M
Abstract: Radar transistor 220
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PH1214-220M PH1214-220M Radar transistor 220 | |
Contextual Info: Avionics Pulsed Power Transistor PH1090-800S Preliminary 800 Watts, 1030-1090 MHz, 10 |is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation |
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PH1090-800S 5b42E05 | |
pin26
Abstract: J22 transistor PH1090-175L
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PH1090-175L pin26 J22 transistor PH1090-175L |