PW03260796 Search Results

MG8J6ES1

Abstract: ge 152g K 2056 transistor
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG8J6ES1 Unit in mm High Power Switching Applications Motor Control Applications • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage : v C E s a t = 4.0V (Max.)

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG8J6ES1 High Power Switching Applications Motor Control Applications • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage : VCE sat = 4.0V (Max.)