Q 143 TRANSISTOR Search Results

Q 143 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

Q 143 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
D 1414 transistor Abstract: AT-00511 Text: HEWLETT-PACKARD/ CMPNTS LIE D • K i » l HEWLETT ml'FA PACKARD 4447SA4 SSD HHPA AT-00511 Surface Mount General Purpose Silicon Bipolar Transistor Features • • • • • • □ D Q CI 7 7 E SOT-143 Plastic Package 11 dB Typical PidB at 2.0 GHz 11.5 dB Typical G1dB at 2.0 GHz	OCR Scan	PDF	4447SA4 AT-00511 OT-143 D 1414 transistor
Untitled Abstract: No abstract text available Text: bbS3R31 Q02HS5U N AMER PHILIPS/DISCRETE «APX b7E D BCV64 BCV64B A SILICON PLANAR TRANSISTOR Double P-N-P transistor in a plastic SO T-143 envelope. Intended for Schmitt-trigger applications. N-P-N complement is the BC V63. Q U IC K R E F E R E N C E D A T A	OCR Scan	PDF	bbS3R31 Q02HS5U BCV64 BCV64B T-143 Q02USSb
marking code ER sot 143 Abstract: transistor D95 TRANSISTOR C Text: BCV63 BCV63B SILICON PLANAR TRANSISTOR D ouble N-P-N transistor in a plastic SO T-143 package. Intended fo r S c h m itt trigger applications. P-N-P com p le m e nt is th e BCV64. Q UICK REFERENCE D A T A transistor C o lle c to r-e m itte r voltage open base	OCR Scan	PDF	BCV63 BCV63B T-143 BCV64. BCV63B marking code ER sot 143 transistor D95 TRANSISTOR C
transistor marking T2 Abstract: ja transistor bcv64 SOT143 TRANSISTOR 436 BCV63 BCV64 BCV64B SCHMITT-TRIGGER application 700 v power transistor Text: 7iiüaab DObasEO tmt IPHIN BCV64 BCV64B SILICON PLANAR TRANSISTOR D ouble P-N-P tran sisto r in a plastic SO T-143 envelope. Intended fo r S ch m itt-trig g e r applications. N-P-N com p le m e nt is th e BCV63. Q U IC K R E F E R E N C E D A T A tran sisto r	OCR Scan	PDF	BCV64 BCV64B OT-143 BCV63. 711005b transistor marking T2 ja transistor bcv64 SOT143 TRANSISTOR 436 BCV63 BCV64B SCHMITT-TRIGGER application 700 v power transistor
bcv64 SOT143 Abstract: No abstract text available Text: BCV64 BCV64B SILICON PLANAR TRANSISTOR Double P-N-P tran sisto r in a plastic SOT-143 package. Intended fo r S ch m itt-trig g e r applications. N-P-N com p le m e nt is the BCV63. Q U IC K R E F E R E N C E D A T A transistor T2 T1 C o lle c to r-e m itte r voltage open base	OCR Scan	PDF	BCV64 BCV64B OT-143 BCV63. bcv64 SOT143
transistor D95 Abstract: transistor w 431 SOT-143 MARKING 557 transistor marking T2 h a 431 transistor PHILIPS 557 SOT143 marking 557 SOT143 transistor marking code 431 557 SOT-143 557 sot143 Text: • bbSSTSl 0024551 557 H A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR D ouble N-P-N tran sisto r in a plastic SO T-143 envelope. Intended fo r S ch m itt-trig g e r applications. P-N-P co m p le m e n t is the BCV64. Q U IC K R EFE R E N C E D A T A	OCR Scan	PDF	b53131 BCV63 BCV63B OT-143 BCV64. 0D2M553 700mV transistor D95 transistor w 431 SOT-143 MARKING 557 transistor marking T2 h a 431 transistor PHILIPS 557 SOT143 marking 557 SOT143 transistor marking code 431 557 SOT-143 557 sot143
KJE SOT-23 Abstract: BF993 BFT92 KJE transistor BFT93 Transistor BFR 35 BF994 14 SOT-23 RF Transistors sot-23 BFS17n Text: MOS field-effect transistors Type Characteristics Tamb = 25 ° C Maximum ratings N channel '•'bs V Pto, h mA 9ts mS mW °C G dB V Kds Package outlines f M Hz Iq mA Pin configu ration No. Type BF 989 20 30 150 200 12 1 6 ,5 15 7 800 13 S O T 143 BF 993	OCR Scan	PDF	BF994 KJE SOT-23 BF993 BFT92 KJE transistor BFT93 Transistor BFR 35 14 SOT-23 RF Transistors sot-23 BFS17n
Untitled Abstract: No abstract text available Text: 30E D • 7 ^ 2 3 7 □ □ 2 ì ? 4 3 □ ■ H ~ : 3 CI - I 3 Æ 7 S C S -T H O M S O N IRF 140 -141 RMD ia@i[Lli(gTOIRgo©l_ IRF 142 - 143 S 6 S-THOMSON • • • • n - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on •d	OCR Scan	PDF	IRF140 IRF141 IRF143 IRF142 r-39-Ã
transistor 1431 T Abstract: BR521L Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon High-Frequency Transistor MMBR521LT1 MRF5211LT1 D e s ig n e d p rim a rily fo r use in th e h ig h -g a in , lo w -n o is e s m a ll-s ig n a l am plifiers for operation up to 3.5 GHz. Also usable in applications requiring fast	OCR Scan	PDF	MMBR521LT1) MRF5211LT1) MRF5211LT1 MMBR521LT1 transistor 1431 T BR521L
LF 13471 Abstract: UFN140 Text: UNITRODE CORP 9347963 U N I T R O D E CORP 92D 10612 07^ $f-/ 5 POWER MOSFET TRANSISTORS ¡j^jjo 100 Volt, 0.085 Ohm N-Channel UFN142 UFN143 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability	OCR Scan	PDF	UFN142 UFN143 UFN140 UFN141 LF 13471
IRF 140 Abstract: IRF143 IRF141 IRF142 IRF140 Text: S 7 SGS-THOMSON IRF 140 -141 IRF 1 4 2 - 1 4 3 ilLltgTTlMIDtgl J m TM N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS • • • • TYPE V DSS R DS on IRF140 100 V 0.077 IRF141 80 V 0.077 IRF142 100 V 0.100 IRF143 80 V 0.100 fi fi fi fi 'd 28 A 28 A	OCR Scan	PDF	IRF140 IRF141 IRF142 IRF143 IRF 140 IRF143
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE ObE D • bb 5 3 T 31 Q O m ^ b ? b ■ J V LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich	OCR Scan	PDF	LTE42005S LTE42008R
LTE42012R Abstract: 5j12 transistor 307A Text: N AMER PHILIPS/DI SCRETE GbE D ^ 5 3 ^ 3 1 D 0 m *177 LTE42012R T-ZZ-OÉr M ICROW AVE LINEAR POWER T RA N SISTO R N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to a frequency of 4,2 G H z in c.w. conditions in military and professional applications.	OCR Scan	PDF	LTE42012R T-32-Oir 5j12 transistor 307A
LTE42012R Abstract: SC15 c 1583 transistor Text: Philips Semiconductors Product specification NPN microwave power transistor LTE42012R FEATURES PINNING - SOT44QA • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSW R	OCR Scan	PDF	LTE42012R OT44QA. LTE42012R SC15 c 1583 transistor

philips bfq32 Abstract: BFQ32 BFR96 philips PNP transistor 263 transistor bfr96 BFR96 BFR96 pins resistance GHz PNP transistor BFQ-32 Text: Product specification Philips Sem iconductors 7=v3/ -JZ3 PNP 4 GHz wideband transistor PH IL IPS INTERNATIONAL DESCRIPTION BFQ32 7 1 1 0 0 2 b Ü Ü 4 S M 2 Ü 41D H I P H I N PINNING PNP transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband	OCR Scan	PDF	BFq32 BFR96. 711062b 00M5423 MBB347 philips bfq32 BFQ32 BFR96 philips PNP transistor 263 transistor bfr96 BFR96 BFR96 pins resistance GHz PNP transistor BFQ-32
Untitled Abstract: No abstract text available Text: Philips Semiconductors bbSB^Bl 0031531 "ns HAPX^^duc^peoification PNP 4 G Hz wideband transistor £ BFQ32 N AUER PHILIPS/DISCRETE D ESCRIPTION b'lE PINNING P N P transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband	OCR Scan	PDF	BFQ32 BFQ32/02 BFR96. bbS3T31
BFQ60 Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2 Text: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — - — — • » « w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal	OCR Scan	PDF	fl23Sb05 QQ04b43 -TZ3/-33_ Q62702-F655 fl23SbOS BFQ60 BFQ60 BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
245A-02 Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R F 2bE D h3b7254 O Q m M S Ö MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products PNP/NPN Silicon Complementary Power Darlington Transistors mo M JM 6052 111/111 (NPN) (PNP) M JM 6059 Suffixes: HX, H X V Processed per	OCR Scan	PDF	h3b7254 MIL-S-19500/ O-116) 245A-02
ne46134 Abstract: NE46134 equivalent ne461 Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE . LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP . LOW NOISE: 1.5 dB TYP at 500 MHz	OCR Scan	PDF	NE46100 NE46134 NE46134 NE461 7100D -12S2L OT-89) NE46134 equivalent
GE10016 Abstract: GE10023 GE10015 GE10020 GE10022 GEI0020 GE1001 Text: u i a u Q D P P n GE10015,16, 20.21.22.23 NPN POWER DARLINGTON TRANSISTORS 500 VOLTS 40-60 AMPS, 250 WATTS These devices are designed for use in high speed switching applications, such as off-line switching power supplies, AC & DC motor control, UPS systems, ultra sonic equipment and	OCR Scan	PDF	GE10015 S30fl T0-204AE tjs150Â QEI00I5, OEI0020 OE10022, GE10016 GE10023 GE10020 GE10022 GEI0020 GE1001
NS 8002 1151 Abstract: TO-66 CASE Text: M O T O R O L A SC XST RS/ R F EbE D b 3b 7E 5 4 G G m 4 3 4 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M JM 3792 DM0 Discrete Military Products Suffixes: HX, H X V m in t PIMP Silicon Pow er Transistor Processed per MIL-S-19500/379 . designed for medium-speed switching and amplifier applications	OCR Scan	PDF	MIL-S-19500/379 O-116) NS 8002 1151 TO-66 CASE
mt 1389 de Abstract: mt 1389 de ic NS 8002 1151 mt 1389 de motorola 2N3737 2N3735 TO-206AB Text: MOTOROLA SC XSTRS/R F 5 ti E D L>3b72S4 QGTObSb 5 MOTOROLA S E M IC O N D U C T O R n TECHNICAL DATA T Suffixes: Ulflll IMPN Silicon Sm all-Sign al Transistors s -0 7 MM3735 MM3737 DM0 Discrete Military Products - ^ H, HX, H X V Processed per MIL-S-19500/395B	OCR Scan	PDF	3b72S4 MM3735 MM3737 MIL-S-19500/395B O-116) mt 1389 de mt 1389 de ic NS 8002 1151 mt 1389 de motorola 2N3737 2N3735 TO-206AB
MJ 15007 transistor Abstract: MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz	OCR Scan	PDF	NE46100 NE46134 NE46134 NE461 b427525 b5L37 OT-89) MJ 15007 transistor MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent
telefunken ta 750 Abstract: No abstract text available Text: TELEFUNKEN ELECTRONIC 61C D milFyiMiN] electronic • fl'iEOQ'ib Q 0 0 5 M 20 3 ■ ALGG ‘ S 662 T Creative Technologies Silicon NPN RF Planar Transistor Applications; Gain controlled UHF/VHF Input stages Features: • High power gain • Low noise figures	OCR Scan	PDF	569-GS telefunken ta 750

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Q 143 TRANSISTOR Search Results

Q 143 TRANSISTOR Result Highlights (5)

Q 143 TRANSISTOR Datasheets Context Search

D 1414 transistor

Untitled

marking code ER sot 143

transistor marking T2

bcv64 SOT143

transistor D95

KJE SOT-23

Untitled

transistor 1431 T

LF 13471

IRF 140

Untitled

LTE42012R

LTE42012R

philips bfq32

Untitled

BFQ60

245A-02

ne46134

GE10016

NS 8002 1151

mt 1389 de

MJ 15007 transistor

telefunken ta 750