Q 143 TRANSISTOR Search Results

D 1414 transistor

Abstract: AT-00511
Contextual Info: HEWLETT-PACKARD/ CMPNTS LIE D • K i » l HEWLETT ml'FA PACKARD 4447SA4 SSD HHPA AT-00511 Surface Mount General Purpose Silicon Bipolar Transistor Features • • • • • • □ D Q CI 7 7 E SOT-143 Plastic Package 11 dB Typical PidB at 2.0 GHz 11.5 dB Typical G1dB at 2.0 GHz

Contextual Info: bbS3R31 Q02HS5U N AMER PHILIPS/DISCRETE «APX b7E D BCV64 BCV64B A SILICON PLANAR TRANSISTOR Double P-N-P transistor in a plastic SO T-143 envelope. Intended for Schmitt-trigger applications. N-P-N complement is the BC V63. Q U IC K R E F E R E N C E D A T A

marking code ER sot 143

Abstract: transistor D95 TRANSISTOR C
Contextual Info: BCV63 BCV63B SILICON PLANAR TRANSISTOR D ouble N-P-N transistor in a plastic SO T-143 package. Intended fo r S c h m itt trigger applications. P-N-P com p le m e nt is th e BCV64. Q UICK REFERENCE D A T A transistor C o lle c to r-e m itte r voltage open base

transistor marking T2

Abstract: ja transistor bcv64 SOT143 TRANSISTOR 436 BCV63 BCV64 BCV64B SCHMITT-TRIGGER application 700 v power transistor
Contextual Info: 7iiüaab DObasEO tmt IPHIN BCV64 BCV64B SILICON PLANAR TRANSISTOR D ouble P-N-P tran sisto r in a plastic SO T-143 envelope. Intended fo r S ch m itt-trig g e r applications. N-P-N com p le m e nt is th e BCV63. Q U IC K R E F E R E N C E D A T A tran sisto r

bcv64 SOT143

Contextual Info: BCV64 BCV64B SILICON PLANAR TRANSISTOR Double P-N-P tran sisto r in a plastic SOT-143 package. Intended fo r S ch m itt-trig g e r applications. N-P-N com p le m e nt is the BCV63. Q U IC K R E F E R E N C E D A T A transistor T2 T1 C o lle c to r-e m itte r voltage open base

transistor D95

Abstract: transistor w 431 SOT-143 MARKING 557 transistor marking T2 h a 431 transistor PHILIPS 557 SOT143 marking 557 SOT143 transistor marking code 431 557 SOT-143 557 sot143
Contextual Info: • bbSSTSl 0024551 557 H A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR D ouble N-P-N tran sisto r in a plastic SO T-143 envelope. Intended fo r S ch m itt-trig g e r applications. P-N-P co m p le m e n t is the BCV64. Q U IC K R EFE R E N C E D A T A

KJE SOT-23

Abstract: BF993 BFT92 KJE transistor BFT93 Transistor BFR 35 BF994 14 SOT-23 RF Transistors sot-23 BFS17n
Contextual Info: MOS field-effect transistors Type Characteristics Tamb = 25 ° C Maximum ratings N channel '•'bs V Pto, h mA 9ts mS mW °C G dB V Kds Package outlines f M Hz Iq mA Pin configu­ ration No. Type BF 989 20 30 150 200 12 1 6 ,5 15 7 800 13 S O T 143 BF 993

Contextual Info: 30E D • 7 ^ 2 3 7 □ □ 2 ì ? 4 3 □ ■ H ~ : 3 CI - I 3 Æ 7 S C S -T H O M S O N IRF 140 -141 RMD ia@i[Lli(gTOIRgo©l_ IRF 142 - 143 S 6 S-THOMSON • • • • n - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on •d

transistor 1431 T

Abstract: BR521L
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon High-Frequency Transistor MMBR521LT1 MRF5211LT1 D e s ig n e d p rim a rily fo r use in th e h ig h -g a in , lo w -n o is e s m a ll-s ig n a l am plifiers for operation up to 3.5 GHz. Also usable in applications requiring fast

LF 13471

Abstract: UFN140
Contextual Info: UNITRODE CORP 9347963 U N I T R O D E CORP 92D 10612 07^ $f-/ 5 POWER MOSFET TRANSISTORS ¡j^jjo 100 Volt, 0.085 Ohm N-Channel UFN142 UFN143 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

IRF 140

Abstract: IRF143 IRF141 IRF142 IRF140
Contextual Info: S 7 SGS-THOMSON IRF 140 -141 IRF 1 4 2 - 1 4 3 ilLltgTTlMIDtgl J m TM N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS • • • • TYPE V DSS R DS on IRF140 100 V 0.077 IRF141 80 V 0.077 IRF142 100 V 0.100 IRF143 80 V 0.100 fi fi fi fi 'd 28 A 28 A

Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bb 5 3 T 31 Q O m ^ b ? b ■ J V LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich

LTE42012R

Abstract: 5j12 transistor 307A
Contextual Info: N AMER PHILIPS/DI SCRETE GbE D ^ 5 3 ^ 3 1 D 0 m *177 LTE42012R T-ZZ-OÉr M ICROW AVE LINEAR POWER T RA N SISTO R N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to a frequency of 4,2 G H z in c.w. conditions in military and professional applications.

LTE42012R

Abstract: SC15 c 1583 transistor
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE42012R FEATURES PINNING - SOT44QA • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSW R

philips bfq32

Abstract: BFQ32 BFR96 philips PNP transistor 263 transistor bfr96 BFR96 BFR96 pins resistance GHz PNP transistor BFQ-32
Contextual Info: Product specification Philips Sem iconductors 7=v3/ -JZ3 PNP 4 GHz wideband transistor PH IL IPS INTERNATIONAL DESCRIPTION BFQ32 7 1 1 0 0 2 b Ü Ü 4 S M 2 Ü 41D H I P H I N PINNING PNP transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband

Contextual Info: Philips Semiconductors bbSB^Bl 0031531 "ns HAPX^^duc^peoification PNP 4 G Hz wideband transistor £ BFQ32 N AUER PHILIPS/DISCRETE D ESCRIPTION b'lE PINNING P N P transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband

BFQ60

Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
Contextual Info: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — *- — — • » « * w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal

245A-02

Contextual Info: MOTOROLA SC XSTRS/R F 2bE D h3b7254 O Q m M S Ö MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products PNP/NPN Silicon Complementary Power Darlington Transistors mo M JM 6052 111/111 (NPN) (PNP) M JM 6059 Suffixes: HX, H X V Processed per

ne46134

Abstract: NE46134 equivalent ne461
Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE . LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP . LOW NOISE: 1.5 dB TYP at 500 MHz

GE10016

Abstract: GE10023 GE10015 GE10020 GE10022 GEI0020 GE1001
Contextual Info: u i a u Q D P P n GE10015,16, 20.21.22.23 NPN POWER DARLINGTON TRANSISTORS 500 VOLTS 40-60 AMPS, 250 WATTS These devices are designed for use in high speed switching applications, such as off-line switching power supplies, AC & DC motor control, UPS systems, ultra sonic equipment and

NS 8002 1151

Abstract: TO-66 CASE
Contextual Info: M O T O R O L A SC XST RS/ R F EbE D b 3b 7E 5 4 G G m 4 3 4 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M JM 3792 DM0 Discrete Military Products Suffixes: HX, H X V m in t PIMP Silicon Pow er Transistor Processed per MIL-S-19500/379 . designed for medium-speed switching and amplifier applications

mt 1389 de

Abstract: mt 1389 de ic NS 8002 1151 mt 1389 de motorola 2N3737 2N3735 TO-206AB
Contextual Info: MOTOROLA SC XSTRS/R F 5 ti E D L>3b72S4 QGTObSb 5 MOTOROLA S E M IC O N D U C T O R n TECHNICAL DATA T Suffixes: Ulflll IMPN Silicon Sm all-Sign al Transistors s -0 7 MM3735 MM3737 DM0 Discrete Military Products - ^ H, HX, H X V Processed per MIL-S-19500/395B

MJ 15007 transistor

Abstract: MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent
Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz

telefunken ta 750

Contextual Info: TELEFUNKEN ELECTRONIC 61C D milFyiMiN] electronic • fl'iEOQ'ib Q 0 0 5 M 20 3 ■ ALGG ‘ S 662 T Creative Technologies Silicon NPN RF Planar Transistor Applications; Gain controlled UHF/VHF Input stages Features: • High power gain • Low noise figures