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    Q 451 Search Results

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    Q 451 Price and Stock

    Abracon Corporation AFBC-Q4515-800-T

    FERRITE BEAD 80 OHM 3A 1LN
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    DigiKey AFBC-Q4515-800-T Digi-Reel 1,925 1
    • 1 $0.24
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    AFBC-Q4515-800-T Cut Tape 1,925 1
    • 1 $0.24
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    • 100 $0.1162
    • 1000 $0.07688
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    Avnet Americas AFBC-Q4515-800-T Reel 12 Weeks 2,000
    • 1 -
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    • 10000 $0.06956
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    Newark AFBC-Q4515-800-T Cut Tape 1,735 5
    • 1 $0.251
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    • 100 $0.128
    • 1000 $0.083
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    Avnet Abacus AFBC-Q4515-800-T Reel 14 Weeks 2,000
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    United Chemi-Con Inc EKXQ451ELL620ML25S

    CAP ALUM 450V POLAR
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    DigiKey EKXQ451ELL620ML25S Bulk 996 1
    • 1 $2.5
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    Mouser Electronics EKXQ451ELL620ML25S 496
    • 1 $2.09
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    • 1000 $0.977
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    United Chemi-Con Inc EKMQ451ELL330ML25S

    CAP ALUM 33UF 20% 450V RADIAL TH
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    DigiKey EKMQ451ELL330ML25S Bulk 900 1
    • 1 $1.8
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    Master Electronics EKMQ451ELL330ML25S
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    United Chemi-Con Inc EKXQ451ELL181MM45S

    CAP ALUM 450V POLAR
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    DigiKey EKXQ451ELL181MM45S Bulk 499 1
    • 1 $5.45
    • 10 $3.694
    • 100 $5.45
    • 1000 $2.26192
    • 10000 $2.13558
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    United Chemi-Con Inc EKXQ451ELL131MMP1S

    CAP ALUM 450V POLAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EKXQ451ELL131MMP1S Bulk 482 1
    • 1 $4.28
    • 10 $2.863
    • 100 $4.28
    • 1000 $1.7059
    • 10000 $1.54187
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    Q 451 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 20 dB 14 ghz

    Abstract: PH1214-300M Radar transistor Common Base configuration transistor 15 GHz
    Text: Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 12/06/01 PH1214-300M Rev. 0 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


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    PDF PH1214-300M transistor 20 dB 14 ghz PH1214-300M Radar transistor Common Base configuration transistor 15 GHz

    PH1214-300M

    Abstract: No abstract text available
    Text: Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 9/4/02 PH1214-300M Rev. 1 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


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    PDF PH1214-300M PH1214-300M

    DIODE marking S6 89

    Abstract: diode ED 1B DSA0032870 D542 BI55 marking EB diode eb 1b 4240R
    Text: IPB023N06N3 G Ie\Q "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC V 9H .( J R 9H"[Z#$YMd *&+ Y" I9 ,( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


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    PDF IPB023N06N3 DIODE marking S6 89 diode ED 1B DSA0032870 D542 BI55 marking EB diode eb 1b 4240R

    marking 9D

    Abstract: G973 marking eb5 EB5 MARKING
    Text: IPB260N06N3 G IPP260N06N3 G Ie\Q "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC V 9H .( J R 9H"[Z#$YMd *. Y" I9 */ 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


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    PDF IPB260N06N3 IPP260N06N3 65AE5 marking 9D G973 marking eb5 EB5 MARKING

    diode ED 1B

    Abstract: marking EB diode 5D j marking
    Text: IPB054N06N3 G IPP057N06N3 G Ie\Q "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC   I9 .( J -&, Y" 0( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


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    PDF IPB054N06N3 IPP057N06N3 diode ED 1B marking EB diode 5D j marking

    Untitled

    Abstract: No abstract text available
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    Abstract: No abstract text available
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    d5cd

    Abstract: No abstract text available
    Text: Ie\Q  %  ! ! %   B< "%&$!"#  # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 6LHZ[XLY Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC + 9H .( J 9H"[Z#$YMd /&. Y" &9 -( 6 Q  H3 5<<5>D71D5 3 81B75 H) 9H"[Z# @B? 4E3 D ( & 


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    D919

    Abstract: No abstract text available
    Text: #   !  !   Ie\Q B< "%&$!"#  # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 6LHZ[XLY Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC 9H .( J ' 9H"[Z#$YMd +&* Y" $9 0, 6 Q  H3 5<<5>D71D5 3 81B75 H' 9H"[Z# @B? 4E3 D ( & 


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    1B95

    Abstract: No abstract text available
    Text: #   !  !   Ie\Q "%&$!"#D  # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 6LHZ[XLY Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC 9H .( J ' 9H"[Z#$YMd )&/ YW $9 )0( 6 Q  H3 5<<5>D71D5 3 81B75 H' 9H"[Z# @B? 4E3 D ( & 


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    Untitled

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    Untitled

    Abstract: No abstract text available
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    Untitled

    Abstract: No abstract text available
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    CCD MARKING

    Abstract: No abstract text available
    Text: IPA075N15N3 G Ie\Q "%&$!"#TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y" I9 ,+ 6 Q . 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D EB5 Q ) 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9 1>D Q * E1<96954 13 3 ? B49>7 D? $    


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    IPB029N06N3G

    Abstract: No abstract text available
    Text: IPB029N06N3 G Ie\Q IPI032N06N3 G IPP032N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H , & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC I9   .( J *&1 Y" *(


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    PDF IPB029N06N3 IPI032N06N3 IPP032N06N3 IPB029N06N3G

    d5cd

    Abstract: IPI024N06N3 G
    Text: IPB021N06N3 G Ie\Q IPI024N06N3 G IPP024N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC   I9 .( J *& Y" )*( 6


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    Untitled

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    PDF CG9D389 381B75à D5CD54 D1B75Dà 931D9? D85BG9C5à

    a19b

    Abstract: No abstract text available
    Text: # ! !฀ Ie\Q D฀#:A0<&<,9=4=>:< #<:/?.>฀%?88,<C 6LHZ[XLY Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀CI>3 ฀B53 Q฀ @D9=9J54฀D538>?<?7I฀6?B฀ ฀3?>F5BD5BC 9H .( J ' 9H"[Z#$YMd )&/ Y9 $9 )0( 6 Q฀H35<<5>D฀71D5฀381B75฀H฀' 9H"[Z#฀@B?4E3D฀ (&


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    PDF CG9D389 381B75à D5CD54 D1B75Dà 931D9? a19b

    OG426

    Abstract: ADG433A n channel j fet ADG429 DG451A
    Text: D Q 426/A , D Q 429/A , D Q 433/A , D Q 434/A , D O 440/A , D Q 441/A , D G 451/A , D Q 452/A , D Q 453/A , D Q 454/A 2-Channel D rivers w ith SPST and DPST FET Sw itches FEATURES GENERAL DESCRIPTION • These switching circuits contain tw o channels in one pack­


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    PDF DG426/A, DG429/A, DG433/A, DG434/A, DG440/A, DG441/A, DG451/A, DG452/A, DG453/A, DG454/A OG426 ADG433A n channel j fet ADG429 DG451A

    Untitled

    Abstract: No abstract text available
    Text: c M ODEL# PAGE# Outlines/ General Info 90° Hybrids Q2-*-C . . . . 38 Q 2-*-10 2 _ . . . 38 Q 2 -* * -3 0 1 _ . . . 38 Q 2-*-412 _ . . . 38 Q3-*-C . . . . 38 Q 3 -* * -1 0 2 _ . . . 38 Q 3 -* * -3 0 1 _ . . . 38 Q 3 -* * -4 1 2 _ . . . 38


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    CRT9007

    Abstract: AD10 AD11 AD12 AD14 CRT97C11 VDA13
    Text: CRT97C11 STANDARD MICROSYSTEMS CORPORATION^ PRELIMINARY Video Engine For Windows VIEW PIN CONFIGURATION FEATURES: olEE llt<S!3?£<S?s!o z t t t t o Q Q Û O Û Û O Q Q O Q o < < < < >n >. n> n> n>n>n >n >n >n >n >n > n n rn n n n 9 0 7 6 5 4 3 2 1 6867666564636261


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    PDF CRT97C11 CRT9007 AD10 AD11 AD12 AD14 VDA13