DIODE BY 339
Abstract: BB119
Text: N AUER PHILIPS/DISCRETE b^E D • bbS3^31 Q02b302 m3 IAPX BB119 A SILICON VARIABLE CAPACITANCE DIODE P l a n a r - d i f f u s e d d io d e i n a D O - 3 5 e n v e l o p e i n t e n d e d f o r a u t o m a t i c f r e q u e n c y c o n t r o l in ra d io and tele v isio n r e c e iv e r s .
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Q02b302
BB119
DO-35
DO-35
hbS3R31
002b3fiM
7Z72993
DIODE BY 339
BB119
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str 50113
Abstract: BQ 6100 1ntc1 uPD78P224 nec 6101
Text: NEC N E C ELECTRONICS INC 30E D t>427525 Q02bl0fl 5 • |xPD7B22x Advanced, 8-Bit Real-Time Control Microcomputers With Analog Comparators NEC Electronics Inc. ■ _ r - H - q - n - a v Description T he IXPD78220, p,PD78224, and J.PD78P224 are highperformance, 8 -bit, single-chip microcomputers. They
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Q02bl0fl
xPD7B22x
uPD78220
uPD78224
uPD78P224
xPD7822x
T-49-19-59
addr16
addr16i
str 50113
BQ 6100
1ntc1
nec 6101
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Untitled
Abstract: No abstract text available
Text: blE J> m bbS3131 Q02blSb 51T • APX BA316 BA317 N AMER PHILIPS/DISCRETE BA318 V y 10 V, 30 V and 50 V GENERAL PURPOSE DIODES Silicon p la n ar epitaxial diodes in DO-35 envelopes intended fo r g en e ral p u rp o se a p p li
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bbS3131
Q02blSb
BA316
BA317
BA318
DO-35
BA316,
BA317
BA318.
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BYD37J
Abstract: solid tube industrial rectifier BYD37 BYD37K BYD37M BYD37 Series BYD37D BYD37G rectifier tube 577
Text: N AUER PHILIPS/DISCRETE LTE D • bbS3T31 Q02b5flfl 423 M A P X P hilips Sem Product specification Avalanche fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in
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BYD37
BYD37J
solid tube industrial rectifier
BYD37K
BYD37M
BYD37 Series
BYD37D
BYD37G
rectifier tube 577
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BA315
Abstract: vf590 IEC134
Text: bbSBTBl Q02blS3 SfiG BA 315 bTE T> N AUER PHILIPS/DISCRETE IAPX JL LOW VOLTAGE STABISTOR Silicon plan ar ep itaxial diode in a DO-35 envelope p rim a rily intended for low voltage stabilizing. QUICK REFERENCE DATA R epetitive peak re v e rs e voltage R epetitive peak forw ard c u rre n t
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Q02blS3
BA315
DO-35
DO-35
002bl55
BA315
vf590
IEC134
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Untitled
Abstract: No abstract text available
Text: bbS3T31 Q02bQSD 1S3 H A P X Philips Semiconductors D a ta s h e e t s ta tu s P re lim in a ry s p e c ific a tio n d a te o f is s u e A p ril 1991 PZTA55/PZTA56 Silicon epitaxial transistors N AMER PHILIPS/DISCRETE » QUICK REFERENCE DATA DESCRIPTION PNP transistors in a microminiature
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bbS3T31
Q02bQSD
PZTA55/PZTA56
PZTA55
PZTA56
OT2230
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Untitled
Abstract: No abstract text available
Text: • bbS3T31 Q02b3bb TTD * A P X N AUER PHILIPS/MSCRETE BAX14 b^E ]> GENERAL PURPOSE DIODE General purpose diode in a DO-35 envelope intended for low-voltage switching and rectifier applica tions, but owing to its steep forward voltage curve also suitable for low-voltage stabilizing.
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bbS3T31
Q02b3bb
BAX14
DO-35
OD-27
DO-35)
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bb112
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bRE ]> bbS3^31 Q02b3fl0 37D H A P X A BB112 SILICON PLANAR VARIABLE CAPACITANCE DIODE The BB112 is a single 9 V variable capacitance diode in a plastic encapsulation for application in tuning circuits in a.m. receivers. The diodes are supplied in matched sets of three items.
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Q02b3fl0
BB112
BB112
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c10 5t
Abstract: No abstract text available
Text: 37Ë D ~ H ¡HAS 4305271 Q02bl2b 3 , Hlgh-Reliability Advanced CMOS Logic ICs HARRIS SEIUCOND SECTOR ' CD 54AC 241/3 A CD54ACT241/3A T ^ S Z -0 7 The RCA CD54AC241/3A and CD54ACT241/3A are 3-state octal buffer/line drivers that utilize the new RCA ADVANCED
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Q02bl2b
CD54ACT241/3A
CD54AC241/3A
CD54ACT241/3A
20-lead
Vcc21
c10 5t
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE I> ^ 5 3 ^ 3 1 Q02b7'n Q7Q I IAPX BZW14 TRANSIENT SUPPRESSOR DIODE A double-diffused silicon glass passivated diode in a hermetically sealed axial-leaded glass envelope intended fo r transient suppression in telephony equipment.
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Q02b7
BZW14
OD-64.
bbS3T31
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JQC - 3F -1C
Abstract: D02fc DSASL TC8563 hard disk toshiba
Text: TOSHIBA UC/UP b4E J> • ^0=1724^ Q02b43B 3bS m i O Z 3 HARD DISK CONTROLLER | | TC8561F l TENTATIVE Hard Disk Controller 1. GENERAL DESCRIPTION The T C 8 5 6 1 F (HDC) is a h igh efficiency 108 73 h a rd d isk c o n tro lle r w ith a b u ilt-in d is k controller, sy stem in terface, b u ffe r m em ory
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Q02b43B
TC8561F
506/E
QFP144-P-2626
TC8561F
TC8561Fisas
QFP144
TC8561F-90
JQC - 3F -1C
D02fc
DSASL
TC8563
hard disk toshiba
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BA221
Abstract: ba221 d BB533
Text: N AMER PHILIPS/DISCRETE tTE D A • ^53131 Q02bim äb^ IAPX BA221 GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purposes. QUICK REFERENCE DATA Continuous reverse voltage Repetitive peak forward current Storage tem perature
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Q02bim
BA221
DO-35
DO-35
BA221
ba221 d
BB533
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BY505
Abstract: IEC134
Text: N AMER PHILIPS/DISCRETE bSE D m bbS3131 Q02b4fl2 024 IAPX BY505 HIGH-VOLTAGE SO F T -R E C O V ER Y RECTIFIER DIODE Glass-passivated rectifier diode in herm etically sealed axial-leaded glass envelope. It is intended as general purpose rectifier fo r high frequencies and features non-snap-off soft recovery switching
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Q02b4fl2
BY505
OD-61.
7Z75833
BY505
IEC134
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Untitled
Abstract: No abstract text available
Text: bbS3T31 Q02bS73 TT2 » A P X bTE B N AUER PHILIPS/DISCRETE BYD33D;G;J;K;M AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Rectifier diodes in hermetically sealed axial-leaded ID* envelopes. They are intended for television and industrial applications, such as switched-mode power supplies, scan rectifiers in TV receivers and also
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bbS3T31
Q02bS73
BYD33D
BYD33D
0D2b57a
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BFQ10
Abstract: 718s
Text: 41 PH IL IP S I N T E R N A T I O N A L E D El 711005 b DD2 b 2 1 S S Ö P H I N '' BFQ10 to 16 T-27-27 DUAL N-CHANNEL FETS Dual symmetrical n-channel silicon planar epitaxial junction field-effect transistors in a TO-71 metal envelope, w ith electrically insulated gates and a common substrate connected to the envelope; intended
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711005b
DD2b21S
BFQ10
T-27-27
BFQ10
718s
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Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256SA Integrated D evice Technology, Inc. FEATURES: DESCRIPTION: • 32K x 8 advanced high-speed C M O S static RAM • Equal access and cycle times — Commercial: 1 2 /1 5/20/25ns • O ne Chip S elect plus one Output Enable pin
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IDT71256SA
5/20/25ns
28-pin
71256S
200mV
600-mil
P28-1)
300-mil
P28-2)
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Untitled
Abstract: No abstract text available
Text: TC518129CPL/CFWL/CFIL-70/80/10 TC518129CPL/CFWL/CFIL-70L/80L/10L SILICON GATE CMOS P R E L IM IN A R Y 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM D e s c rip tio n The T C 5 1 8 1 2 9 C is a 1 M bit high speed C M O S pse udo static RAM organized as 131,072 w o rd s by 8 bits. T h e T C 5 1 8 1 2 9 C utilizes
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TC518129CPL/CFWL/CFIL-70/80/10
TC518129CPL/CFWL/CFIL-70L/80L/10L
Q02bbl3
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Untitled
Abstract: No abstract text available
Text: HM51441OB/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi H M 51441 OB/BL is a CMOS dynamic R A M o rg a n iz e d 1,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1441 OB/BL h as re a liz e d h ig h e r d en sity , h ig h e r p e rfo rm a n c e and v a rio u s fu n c tio n s by
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HM51441OB/BL
576-word
20pin
20-pin
HM514410BS/BLS-7
HM51441OBS/BLS-8
300-mil
20-pin
CP-20D)
HM514410BHM514410B/BL
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Untitled
Abstract: No abstract text available
Text: TOSHIBA UC/UP fciME D • ^ 7 2 ^ DD2b7D4 725 MT0S3 FLOPPY DISK CONTROLLER 11 TC8566AF F lo p p y D is k C ontroller 1. INTRODUCTION TC8566AF is a single chip LSI for Floppy Disk controller which has VFO and other circuits with FDC chip for interfacing a processor to floppy
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TC8566AF
TC8566AF
TC8565AP
16MHz
500Kbps)
250Kbps)
recAF-64
8566AF-65
8566AF-66
QD2b77Ã
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Untitled
Abstract: No abstract text available
Text: B U R R - BROW N ADS802 19-Bit j 10MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • NO MISSING CODES The ADS802 is alow power, monolithic 12-bit, 10MHz analog-to-digital converter utilizing a small geometry CMOS process. This COMPLETE converter includes
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ADS802
19-Bit
10MHz
ADS802
12-bit,
10MHz
12-bit
ZZ217
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Untitled
Abstract: No abstract text available
Text: w . GEC PLESSEY S E M I C O N D U C T O R S MA838 FAMILY SINGLE PHASE PULSE WIDTH MODULATION WAVEFORM GENERATOR The MA838 PWM generator has been designed to provide waveforms for the control of variable speed AC machines, uninterruptible power supplies and other forms of power
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MA838
MA828
full360Â
37bfi522
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Untitled
Abstract: No abstract text available
Text: HM514405C Series Preliminary 1,048,576-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi H M 514405C is a CMOS dynam ic RA M o rg a n iz e d 1 ,0 4 8 ,5 7 6 w ords x 4 b its. HM514405C has realized higher density, higher performance and various functions by employing
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HM514405C
576-word
514405C
HM514405C
300-mil
26-pin
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Untitled
Abstract: No abstract text available
Text: — , FUJITSU SEMICONDUCTOR DATA SHEET DS05-10164-3E MEMORY CMOS 1 M x 4 BIT FAST PAGE MODE DYNAMIC RAM MB814400D-60/-70 CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB814400D is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cell
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DS05-10164-3E
MB814400D-60/-70
MB814400D
024-bits
MB814400D-60
MB814400D-70
MB814400D-60/MB814400D-70
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Untitled
Abstract: No abstract text available
Text: SL6649-1 IS FOR MAINTENANCE PURPOSES ONLY AND IS N O T RECOMMENDED FOR N E W DESIGNS Si GEC PLESSEY S E M I C O N D U C T O R S SL6649-1 200MHz DIRECT CONVERSION FSK DATA RECEIVER Supersedes edition in August 1994 Personal Communications 1C Handbook The SL6649-1 is a low power direct conversion radio
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SL6649-1
SL6649-1
200MHz
1200bps,
470pf.
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