Q02B Search Results

DIODE BY 339

Abstract: BB119
Contextual Info: N AUER PHILIPS/DISCRETE b^E D • bbS3^31 Q02b302 m3 IAPX BB119 A SILICON VARIABLE CAPACITANCE DIODE P l a n a r - d i f f u s e d d io d e i n a D O - 3 5 e n v e l o p e i n t e n d e d f o r a u t o m a t i c f r e q u e n c y c o n t r o l in ra d io and tele v isio n r e c e iv e r s .

str 50113

Abstract: BQ 6100 1ntc1 uPD78P224 nec 6101
Contextual Info: NEC N E C ELECTRONICS INC 30E D t>427525 Q02bl0fl 5 • |xPD7B22x Advanced, 8-Bit Real-Time Control Microcomputers With Analog Comparators NEC Electronics Inc. ■ _ r - H - q - n - a v Description T he IXPD78220, p,PD78224, and J.PD78P224 are highperformance, 8 -bit, single-chip microcomputers. They

Contextual Info: blE J> m bbS3131 Q02blSb 51T • APX BA316 BA317 N AMER PHILIPS/DISCRETE BA318 V y 10 V, 30 V and 50 V GENERAL PURPOSE DIODES Silicon p la n ar epitaxial diodes in DO-35 envelopes intended fo r g en e ral p u rp o se a p p li­

BYD37J

Abstract: solid tube industrial rectifier BYD37 BYD37K BYD37M BYD37 Series BYD37D BYD37G rectifier tube 577
Contextual Info: N AUER PHILIPS/DISCRETE LTE D • bbS3T31 Q02b5flfl 423 M A P X P hilips Sem Product specification Avalanche fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in

BA315

Abstract: vf590 IEC134
Contextual Info: bbSBTBl Q02blS3 SfiG BA 315 bTE T> N AUER PHILIPS/DISCRETE IAPX JL LOW VOLTAGE STABISTOR Silicon plan ar ep itaxial diode in a DO-35 envelope p rim a rily intended for low voltage stabilizing. QUICK REFERENCE DATA R epetitive peak re v e rs e voltage R epetitive peak forw ard c u rre n t

Contextual Info: bbS3T31 Q02bQSD 1S3 H A P X Philips Semiconductors D a ta s h e e t s ta tu s P re lim in a ry s p e c ific a tio n d a te o f is s u e A p ril 1991 PZTA55/PZTA56 Silicon epitaxial transistors N AMER PHILIPS/DISCRETE » QUICK REFERENCE DATA DESCRIPTION PNP transistors in a microminiature

Contextual Info: • bbS3T31 Q02b3bb TTD * A P X N AUER PHILIPS/MSCRETE BAX14 b^E ]> GENERAL PURPOSE DIODE General purpose diode in a DO-35 envelope intended for low-voltage switching and rectifier applica­ tions, but owing to its steep forward voltage curve also suitable for low-voltage stabilizing.

bb112

Contextual Info: N AUER PHILIPS/DISCRETE bRE ]> bbS3^31 Q02b3fl0 37D H A P X A BB112 SILICON PLANAR VARIABLE CAPACITANCE DIODE The BB112 is a single 9 V variable capacitance diode in a plastic encapsulation for application in tuning circuits in a.m. receivers. The diodes are supplied in matched sets of three items.

c10 5t

Contextual Info: 37Ë D ~ H ¡HAS 4305271 Q02bl2b 3 , Hlgh-Reliability Advanced CMOS Logic ICs HARRIS SEIUCOND SECTOR ' CD 54AC 241/3 A CD54ACT241/3A T ^ S Z -0 7 The RCA CD54AC241/3A and CD54ACT241/3A are 3-state octal buffer/line drivers that utilize the new RCA ADVANCED

Contextual Info: N AUER PHILIPS/DISCRETE bTE I> ^ 5 3 ^ 3 1 Q02b7'n Q7Q I IAPX BZW14 TRANSIENT SUPPRESSOR DIODE A double-diffused silicon glass passivated diode in a hermetically sealed axial-leaded glass envelope intended fo r transient suppression in telephony equipment.

JQC - 3F -1C

Abstract: D02fc DSASL TC8563 hard disk toshiba
Contextual Info: TOSHIBA UC/UP b4E J> • ^0=1724^ Q02b43B 3bS m i O Z 3 HARD DISK CONTROLLER | | TC8561F l TENTATIVE Hard Disk Controller 1. GENERAL DESCRIPTION The T C 8 5 6 1 F (HDC) is a h igh efficiency 108 73 h a rd d isk c o n tro lle r w ith a b u ilt-in d is k controller, sy stem in terface, b u ffe r m em ory

BA221

Abstract: ba221 d BB533
Contextual Info: N AMER PHILIPS/DISCRETE tTE D A • ^53131 Q02bim äb^ IAPX BA221 GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purposes. QUICK REFERENCE DATA Continuous reverse voltage Repetitive peak forward current Storage tem perature

BY505

Abstract: IEC134
Contextual Info: N AMER PHILIPS/DISCRETE bSE D m bbS3131 Q02b4fl2 024 IAPX BY505 HIGH-VOLTAGE SO F T -R E C O V ER Y RECTIFIER DIODE Glass-passivated rectifier diode in herm etically sealed axial-leaded glass envelope. It is intended as general purpose rectifier fo r high frequencies and features non-snap-off soft recovery switching

Contextual Info: bbS3T31 Q02bS73 TT2 » A P X bTE B N AUER PHILIPS/DISCRETE BYD33D;G;J;K;M AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Rectifier diodes in hermetically sealed axial-leaded ID* envelopes. They are intended for television and industrial applications, such as switched-mode power supplies, scan rectifiers in TV receivers and also

BFQ10

Abstract: 718s
Contextual Info: 41 PH IL IP S I N T E R N A T I O N A L E D El 711005 b DD2 b 2 1 S S Ö P H I N '' BFQ10 to 16 T-27-27 DUAL N-CHANNEL FETS Dual symmetrical n-channel silicon planar epitaxial junction field-effect transistors in a TO-71 metal envelope, w ith electrically insulated gates and a common substrate connected to the envelope; intended

Contextual Info: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256SA Integrated D evice Technology, Inc. FEATURES: DESCRIPTION: • 32K x 8 advanced high-speed C M O S static RAM • Equal access and cycle times — Commercial: 1 2 /1 5/20/25ns • O ne Chip S elect plus one Output Enable pin

Contextual Info: TC518129CPL/CFWL/CFIL-70/80/10 TC518129CPL/CFWL/CFIL-70L/80L/10L SILICON GATE CMOS P R E L IM IN A R Y 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM D e s c rip tio n The T C 5 1 8 1 2 9 C is a 1 M bit high speed C M O S pse udo static RAM organized as 131,072 w o rd s by 8 bits. T h e T C 5 1 8 1 2 9 C utilizes

Contextual Info: HM51441OB/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi H M 51441 OB/BL is a CMOS dynamic R A M o rg a n iz e d 1,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1441 OB/BL h as re a liz e d h ig h e r d en sity , h ig h e r p e rfo rm a n c e and v a rio u s fu n c tio n s by

Contextual Info: TOSHIBA UC/UP fciME D • ^ 7 2 ^ DD2b7D4 725 MT0S3 FLOPPY DISK CONTROLLER 11 TC8566AF F lo p p y D is k C ontroller 1. INTRODUCTION TC8566AF is a single chip LSI for Floppy Disk controller which has VFO and other circuits with FDC chip for interfacing a processor to floppy

Contextual Info: B U R R - BROW N ADS802 19-Bit j 10MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • NO MISSING CODES The ADS802 is alow power, monolithic 12-bit, 10MHz analog-to-digital converter utilizing a small geometry CMOS process. This COMPLETE converter includes

Contextual Info: w . GEC PLESSEY S E M I C O N D U C T O R S MA838 FAMILY SINGLE PHASE PULSE WIDTH MODULATION WAVEFORM GENERATOR The MA838 PWM generator has been designed to provide waveforms for the control of variable speed AC machines, uninterruptible power supplies and other forms of power

Contextual Info: HM514405C Series Preliminary 1,048,576-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi H M 514405C is a CMOS dynam ic RA M o rg a n iz e d 1 ,0 4 8 ,5 7 6 w ords x 4 b its. HM514405C has realized higher density, higher performance and various functions by employing

Contextual Info: — , FUJITSU SEMICONDUCTOR DATA SHEET DS05-10164-3E MEMORY CMOS 1 M x 4 BIT FAST PAGE MODE DYNAMIC RAM MB814400D-60/-70 CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB814400D is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cell

Contextual Info: SL6649-1 IS FOR MAINTENANCE PURPOSES ONLY AND IS N O T RECOMMENDED FOR N E W DESIGNS Si GEC PLESSEY S E M I C O N D U C T O R S SL6649-1 200MHz DIRECT CONVERSION FSK DATA RECEIVER Supersedes edition in August 1994 Personal Communications 1C Handbook The SL6649-1 is a low power direct conversion radio