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    Q101-Q102 Search Results

    Q101-Q102 Result Highlights (5)

    Part
    ECAD Model
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    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    2SC2712 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K804R Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 12 A, 0.012 Ω@10 V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7AFS Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-923, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    2SC3325 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.5 A / hFE=70~240 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation