tektronix 454
Abstract: bosch sg compaq battery Delco Cyrix geode compaq 510 Q2980 nokia fasb
Text: Q2 - FY01 Financial Summary n n n Q2 Bookings were down 19% from Q2 previous year and 28% down from previous quarter due to: – Wireless sector correcting channel inventory and overall softness in broad market – PC business not reflecting traditional holiday selling strength
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Q1FY2001
Q2/FY00
tektronix 454
bosch sg
compaq battery
Delco
Cyrix geode
compaq 510
Q2980
nokia fasb
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Motherboard dell
Abstract: goldstar Delco PicoPower Ericsson Marconi cyrix 486
Text: Q2 - FY00 Financial Summary n n n Q2 Bookings were up 18% over Q1. Up 43% from prior year – Led by Analog bookings: wireless communications and broad market – Communication infrastructure improving – Advance I/O orders up with PC market Q2 revenues up from Q1 due to continued strength in
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Q3/98
Q4/98
Q1/99
Q2/99
Q3/99
Q4/99
Q1/00
Q2/00
Q2/97
Q3/97
Motherboard dell
goldstar
Delco
PicoPower
Ericsson Marconi
cyrix 486
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F100K
Abstract: SY100S331 SY100S331FC SY100S331JC SY100S331JCTR
Text: TRIPLE D FLIP-FLOP FEATURES BLOCK DIAGRAM VEE VEES CD Q2 CP MR D Q2 SD SD1 D1 4 3 Top View PLCC J28-1 18 Q1 Q1 VCCA 2 1 VCC VCC 28 27 Q2 26 Q2 Q0 1 2 SD2 CD2 CP2 3 4 5 6 D2 MS CPC SD1 MR VEE 24 23 22 21 20 19 18 17 Top View 16 Flatpack 15 F24-1 14 13 7 8 9 10 11 12
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J28-1
F24-1
s0S331FC
SY100S331JCTR
SY100S331JC
SY100S331
F24-1)
F100K
SY100S331
SY100S331FC
SY100S331JC
SY100S331JCTR
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F100K
Abstract: SY100S331 SY100S331FC SY100S331JC SY100S331JCTR
Text: TRIPLE D FLIP-FLOP FEATURES BLOCK DIAGRAM VEE VEES CD Q2 CP MR D Q2 SD SD1 D1 4 3 Q1 Q1 VCCA 2 1 Top View PLCC J28-1 VCC VCC 28 27 18 Q2 26 Q2 1 2 SD2 CD2 3 4 5 6 CP2 Q0 D2 MS CPC SD1 MR VEE 24 23 22 21 20 19 18 17 Top View 16 Flatpack 15 F24-1 14 13 7 8 9 10 11 12
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J28-1
F24-1
SY100S331FC
SY100S331JCTR
SY100S331JC
SY100S331
F24-1)
F100K
SY100S331
SY100S331FC
SY100S331JC
SY100S331JCTR
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Untitled
Abstract: No abstract text available
Text: IRF7904PbF-1 HEXFET Power MOSFET VDS 30 RDS on max Q1 V 16.2 (@VGS = 10V) mΩ RDS(on) max Q2 10.8 (@VGS = 10V) Qg (typical) Q1 7.5 Qg (typical) Q2 14 ID(@TA = 25°C)Q1 7.6 ID(@TA = 25°C)Q2 11 nC G1 1 8 D1 S2 2 7 S1 / D2 S2 3 6 S1 / D2 G2 4 5 S1 / D2 SO-8
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IRF7904PbF-1
D-020D
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54HC123
Abstract: one shot monostable IC MONOSTABLE MULTIVIBRATOR USING TRANSISTOR lear D-16 4031 pin diagram
Text: SEi - Radiation Hardened 54HC123RP Dual Retriggerable Monostable Multivibrator A1 1 16 V C C R EXT1 C EXT B1 CLR1 TOP VIEW C EXT1 Q1 Q1 Q2 Q2 C EXT2 R EXT2 C EXT GND 8 CLR2 B2 9 A2 Features • RAD-PAK Technology Hardened Against Natural Space Radiation
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54HC123RP
TM5005
54HC123
one shot monostable IC
MONOSTABLE MULTIVIBRATOR USING TRANSISTOR
lear
D-16
4031 pin diagram
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IRF9910PBF
Abstract: No abstract text available
Text: IRF9910PbF-1 VDS 20 RDS on m ax Q1 HEXFET Power MOSFET V 13.4 (@VGS = 10V) mΩ RDS(on) m ax Q2 9.3 (@VGS = 10V) Qg (typical) Q1 7.4 Qg (typical) Q2 15 ID(@TA = 25°C)Q1 10 nC S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 A ID(@TA = 25°C)Q2 12 Applications
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IRF9910PbF-1
IRF9910PBF
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Untitled
Abstract: No abstract text available
Text: MT6L71FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L71FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07FS MT3S11AFS Symbol Rating Q1 Q2 VCBO 10
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MT6L71FS
MT3S07FS
MT3S11AFS
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HN1L03FU
Abstract: No abstract text available
Text: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common Low threshold voltage Q1: Vth = 0.8~2.5V High speed Q2: Vth =−0.5~−1.5V Small package
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HN1L03FU
HN1L03FU
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Untitled
Abstract: No abstract text available
Text: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common 2.5V gate drive Low threshold voltage Q1: Vth = 0.5~1.5V High speed Q2: Vth =−0.5~−1.5V
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HN1L02FU
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Pch MOS FET
Abstract: HN1L03FU
Text: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common Low threshold voltage Q1: Vth = 0.8~2.5V High speed Q2: Vth =−0.5~−1.5V Small package
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HN1L03FU
Pch MOS FET
HN1L03FU
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Pch MOS FET
Abstract: No abstract text available
Text: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common 2.5V gate drive Low threshold voltage Q1: Vth = 0.5~1.5V High speed Q2: Vth =−0.5~−1.5V
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HN1L02FU
Pch MOS FET
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IRF7907PBF
Abstract: No abstract text available
Text: IRF7907PbF-1 HEXFET Power MOSFET VDS 30 RDS on m ax Q1 V 16.4 (@VGS = 10V) mΩ RDS(on) m ax Q2 11.8 (@VGS = 10V) Qg (typical) Q1 6.7 Qg (typical) Q2 14 ID(@TA = 25°C)Q1 9.1 ID(@TA = 25°C)Q2 11 nC S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 A Applications
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IRF7907PbF-1
IRF7907PBF
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Untitled
Abstract: No abstract text available
Text: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Corresponding three-pin products: fSM mold products Symbol Q2 MT3S11FS MT3S11AFS Rating Q1 Q2 Unit Collector-base voltage
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MT6L78FS
MT3S11FS
MT3S11AFS
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HN1L03FU
Abstract: No abstract text available
Text: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU Unit in mm High Speed Switching Applications Analog Switch Applications Q1, Q2 common z Low threshold voltage Q1: Vth = 0.8~2.5V z High speed Q2: Vth =−0.5~−1.5V z Small package
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HN1L03FU
HN1L03FU
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HN1L03FU
Abstract: FET MARKING Silicon NP Channel MOS FET High Speed Power Switching
Text: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common z Low threshold voltage Q1: Vth = 0.8~2.5V z High speed Q2: Vth =−0.5~−1.5V z Small package
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HN1L03FU
HN1L03FU
FET MARKING
Silicon NP Channel MOS FET High Speed Power Switching
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EMC3DXV5T5
Abstract: No abstract text available
Text: EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com 3 R1 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Q1 R2 Q2 R1 4 and Q2, − minus sign for Q1 PNP omitted)
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OT-553
EMC3DXV5T5
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Untitled
Abstract: No abstract text available
Text: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1, Q2 IS 2.7e-16 BF 185 Parameters MJC XCJC Q1, Q2 UPA802TC UNITS Parameter Units 0.56 time 0.2 capacitance seconds farads henries ohms NF 1.02 CJS inductance VAF 15 VJS 0.75 resistance IKF 0.055
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UPA802TC
7e-16
77e-11
2e-12
8e-12
5e-12
24-Hour
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CA-303HS
Abstract: No abstract text available
Text: Crystal unit SMD / CYLINDER HIGH-STABILITY CRYSTAL UNIT MA-406H/CA-303HS Product number please refer to page 1 Q2 4M4 0 6Hx x x x x 0 0 Q2 3 C 3 0 3Sx x x x x 0 0 • • • • High-density mounting-type. Excellent heat-resistance and environment capability.
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MA-406H/
CA-303HS
MA-406H
128AU61
CA-303HS
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HN1D03FU
Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE
Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)
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HN1D03FU
HN1D03FU
TOSHIBA "ULTRA HIGH SPEED" DIODE
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HN1D03F
Abstract: No abstract text available
Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)
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HN1D03F
HN1D03F
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Untitled
Abstract: No abstract text available
Text: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 fSM mold products Q2 MT3S11FS MT3S11AFS Symbol Rating Q1 Q2 Unit Collector-base voltage VCBO 13 13 V Collector-emitter voltage
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MT6L78FS
MT3S11FS
MT3S11AFS
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Pch MOS FET
Abstract: HN1L03FU
Text: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common l Low threshold voltage Q1: Vth = 0.8~2.5V l High speed Q2: Vth =−0.5~−1.5V l Small package
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HN1L03FU
Pch MOS FET
HN1L03FU
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Untitled
Abstract: No abstract text available
Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)
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HN1D03F
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