Q2 EX Search Results

tektronix 454

Abstract: bosch sg compaq battery Delco Cyrix geode compaq 510 Q2980 nokia fasb
Contextual Info: Q2 - FY01 Financial Summary n n n Q2 Bookings were down 19% from Q2 previous year and 28% down from previous quarter due to: – Wireless sector correcting channel inventory and overall softness in broad market – PC business not reflecting traditional holiday selling strength

Motherboard dell

Abstract: goldstar Delco PicoPower Ericsson Marconi cyrix 486
Contextual Info: Q2 - FY00 Financial Summary n n n Q2 Bookings were up 18% over Q1. Up 43% from prior year – Led by Analog bookings: wireless communications and broad market – Communication infrastructure improving – Advance I/O orders up with PC market Q2 revenues up from Q1 due to continued strength in

F100K

Abstract: SY100S331 SY100S331FC SY100S331JC SY100S331JCTR
Contextual Info: TRIPLE D FLIP-FLOP FEATURES BLOCK DIAGRAM VEE VEES CD Q2 CP MR D Q2 SD SD1 D1 4 3 Top View PLCC J28-1 18 Q1 Q1 VCCA 2 1 VCC VCC 28 27 Q2 26 Q2 Q0 1 2 SD2 CD2 CP2 3 4 5 6 D2 MS CPC SD1 MR VEE 24 23 22 21 20 19 18 17 Top View 16 Flatpack 15 F24-1 14 13 7 8 9 10 11 12

F100K

Abstract: SY100S331 SY100S331FC SY100S331JC SY100S331JCTR
Contextual Info: TRIPLE D FLIP-FLOP FEATURES BLOCK DIAGRAM VEE VEES CD Q2 CP MR D Q2 SD SD1 D1 4 3 Q1 Q1 VCCA 2 1 Top View PLCC J28-1 VCC VCC 28 27 18 Q2 26 Q2 1 2 SD2 CD2 3 4 5 6 CP2 Q0 D2 MS CPC SD1 MR VEE 24 23 22 21 20 19 18 17 Top View 16 Flatpack 15 F24-1 14 13 7 8 9 10 11 12

Contextual Info: IRF7904PbF-1 HEXFET Power MOSFET VDS 30 RDS on max Q1 V 16.2 (@VGS = 10V) mΩ RDS(on) max Q2 10.8 (@VGS = 10V) Qg (typical) Q1 7.5 Qg (typical) Q2 14 ID(@TA = 25°C)Q1 7.6 ID(@TA = 25°C)Q2 11 nC G1 1 8 D1 S2 2 7 S1 / D2 S2 3 6 S1 / D2 G2 4 5 S1 / D2 SO-8

54HC123

Abstract: one shot monostable IC MONOSTABLE MULTIVIBRATOR USING TRANSISTOR lear D-16 4031 pin diagram
Contextual Info: SEi - Radiation Hardened 54HC123RP Dual Retriggerable Monostable Multivibrator A1 1 16 V C C R EXT1 C EXT B1 CLR1 TOP VIEW C EXT1 Q1 Q1 Q2 Q2 C EXT2 R EXT2 C EXT GND 8 CLR2 B2 9 A2 Features • RAD-PAK Technology Hardened Against Natural Space Radiation

IRF9910PBF

Contextual Info: IRF9910PbF-1 VDS 20 RDS on m ax Q1 HEXFET Power MOSFET V 13.4 (@VGS = 10V) mΩ RDS(on) m ax Q2 9.3 (@VGS = 10V) Qg (typical) Q1 7.4 Qg (typical) Q2 15 ID(@TA = 25°C)Q1 10 nC S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 A ID(@TA = 25°C)Q2 12 Applications

Contextual Info: MT6L71FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L71FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07FS MT3S11AFS Symbol Rating Q1 Q2 VCBO 10

HN1L03FU

Contextual Info: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common Low threshold voltage Q1: Vth = 0.8~2.5V High speed Q2: Vth =−0.5~−1.5V Small package

Contextual Info: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common 2.5V gate drive Low threshold voltage Q1: Vth = 0.5~1.5V High speed Q2: Vth =−0.5~−1.5V

Pch MOS FET

Abstract: HN1L03FU
Contextual Info: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common Low threshold voltage Q1: Vth = 0.8~2.5V High speed Q2: Vth =−0.5~−1.5V Small package

Pch MOS FET

Contextual Info: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common 2.5V gate drive Low threshold voltage Q1: Vth = 0.5~1.5V High speed Q2: Vth =−0.5~−1.5V

IRF7907PBF

Contextual Info: IRF7907PbF-1 HEXFET Power MOSFET VDS 30 RDS on m ax Q1 V 16.4 (@VGS = 10V) mΩ RDS(on) m ax Q2 11.8 (@VGS = 10V) Qg (typical) Q1 6.7 Qg (typical) Q2 14 ID(@TA = 25°C)Q1 9.1 ID(@TA = 25°C)Q2 11 nC S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 A Applications

Contextual Info: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Corresponding three-pin products: fSM mold products Symbol Q2 MT3S11FS MT3S11AFS Rating Q1 Q2 Unit Collector-base voltage

HN1L03FU

Contextual Info: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU Unit in mm High Speed Switching Applications Analog Switch Applications Q1, Q2 common z Low threshold voltage Q1: Vth = 0.8~2.5V z High speed Q2: Vth =−0.5~−1.5V z Small package

HN1L03FU

Abstract: FET MARKING Silicon NP Channel MOS FET High Speed Power Switching
Contextual Info: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common z Low threshold voltage Q1: Vth = 0.8~2.5V z High speed Q2: Vth =−0.5~−1.5V z Small package

EMC3DXV5T5

Contextual Info: EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com 3 R1 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Q1 R2 Q2 R1 4 and Q2, − minus sign for Q1 PNP omitted)

Contextual Info: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1, Q2 IS 2.7e-16 BF 185 Parameters MJC XCJC Q1, Q2 UPA802TC UNITS Parameter Units 0.56 time 0.2 capacitance seconds farads henries ohms NF 1.02 CJS inductance VAF 15 VJS 0.75 resistance IKF 0.055

CA-303HS

Contextual Info: Crystal unit SMD / CYLINDER HIGH-STABILITY CRYSTAL UNIT MA-406H/CA-303HS Product number please refer to page 1 Q2 4M4 0 6Hx x x x x 0 0 Q2 3 C 3 0 3Sx x x x x 0 0 • • • • High-density mounting-type. Excellent heat-resistance and environment capability.

HN1D03FU

Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE
Contextual Info: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)

HN1D03F

Contextual Info: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)

Contextual Info: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 fSM mold products Q2 MT3S11FS MT3S11AFS Symbol Rating Q1 Q2 Unit Collector-base voltage VCBO 13 13 V Collector-emitter voltage

Pch MOS FET

Abstract: HN1L03FU
Contextual Info: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common l Low threshold voltage Q1: Vth = 0.8~2.5V l High speed Q2: Vth =−0.5~−1.5V l Small package

Contextual Info: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)