Q67040S4543 Search Results
Q67040S4543 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SKB15N60HSContextual Info: SKB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability |
Original |
SKB15N60HS P-TO-263-3-2 O-263AB) O-263AB Q67040-S4543 Oct-02 SKB15N60HS | |
SKB15N60HSContextual Info: SKB15N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability |
Original |
SKB15N60HS O-263AB Q67040-S4543 P-TO-263-3-2 O-263AB) SKB15N60HS Aug-02 | |
SKB15N60HSContextual Info: Preliminary Datasheet SKB15N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation G E • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: |
Original |
SKB15N60HS O-263AB Q67040-S4543 SKB15N60HS Jun-02 | |
BCM 4336
Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
|
Original |
B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 | |
K15N60Contextual Info: SKB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability |
Original |
SKB15N60HS K15N60HS P-TO-263-3-2 Q67040S4543 P-TO-263-3-2 O-263AB) SKB15N60HS K15N60 |