Q67040S4544 Search Results
Q67040S4544 Datasheets Context Search
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Contextual Info: SKB06N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability |
Original |
SKB06N60HS O-263AB Q67040-S4544 P-TO-263-3-2 O-263AB) SKB06N60HS Aug-02 | |
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Contextual Info: SKB06N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability |
Original |
SKB06N60HS K06N60HS P-TO-263-3-2 Q67040S4544 P-TO-263-3-2 O-263AB) SKB06N60HS | |
25E-4
Abstract: SKB06N60HS
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Original |
SKB06N60HS P-TO-263-3-2 O-263AB) O-263AB Q67040-S4544 Oct-02 25E-4 SKB06N60HS | |
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Contextual Info: Preliminary Datasheet SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation G E • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: |
Original |
SKB06N60HS O-263AB Q67040-S4544 Jun-02 |