Q67060S60 Search Results

4141d

Abstract: S6098 6 GPT09161 Q67060-S6098
Contextual Info: BTS 4141D Smart High-Side Power Switch 1 Channel: 1 x 200mΩ Features Product Summary • Short circuit protection Overvoltage protection Vbb AZ • Current limitation Operating voltage Vbb(on) • Overload protection On-state resistance • Overvoltage protection (including load dump)

VPS05163

Abstract: BSS100 GPS05560 Q67060-S6084-A101
Contextual Info: BTS 4140 N Smart High-Side Power Switch One Channel: 1 x 1Ω Features Product Summary • Current controlled input Overvoltage protection Vbbin AZ • Short circuit protection Operating voltage Vbb(on) • Current limitation On-state resistance RON 62 V

Q67060-S6038

Abstract: SPB100N04S2L-03 SPP100N04S2L-03 Diode 1_b SMD PN04L03
Contextual Info: SPP100N04S2L-03 SPB100N04S2L-03 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated Type Package VDS 40 RDS on max. SMD version 3 ID

DIODE H5 SMD

Abstract: 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
Contextual Info: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V RDS on 5.5 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type Package

2N06L06

Abstract: DIODE led SMD 5050 smd led 5050 datasheet SPB80N06S2L-06 SPP80N06S2L-06 ANPS071E smd diode marking 69a
Contextual Info: SPP80N06S2L-06 SPB80N06S2L-06 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 6.3 mΩ ID 80 A P- TO263 -3-2 • 175°C operating temperature P- TO220 -3-1 • Avalanche rated • dv/dt rated

diode 6-7

Abstract: IL30 BTS6133D GPT09161 IL12 SMD transistor package code V12 TO-252-5-1 6133 diode
Contextual Info: PROFET Data sheet BTS 6133 D Smart Highside Power Switch Reversave Product Summary Operating voltage On-state resistance Nominal current Load current ISO Current limitation Package • Reverse battery protection by self turn on of power MOSFET Inversave

ANPS071E

Abstract: SPB100N04S2L-03 SPP100N04S2L-03 PN04L03
Contextual Info: SPP100N04S2L-03 SPB100N04S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 40 V • Enhancement mode RDS on max. SMD version 3 mΩ • Logic Level ID 100 • 175°C operating temperature P- TO263 -3-2 A P- TO220 -3-1 • Avalanche rated

4141D

Abstract: GPT09161 Q67060-S6098
Contextual Info: BTS 4141D Smart High-Side Power Switch 1 Channel: 1 x 200mΩ Features Product Summary • Short circuit protection Overvoltage protection Vbb AZ • Current limitation Operating voltage Vbb(on) • Overload protection On-state resistance • Overvoltage protection (including load dump)

pn0605

Abstract: Q67060-S6049 ANPS071E SPB100N06S2-05 SPP100N06S2-05 6E60
Contextual Info: SPP100N06S2-05 SPB100N06S2-05 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode RDS on max. SMD version 4.7 mΩ • 175°C operating temperature ID 100 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated

2N06L11

Abstract: ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 Q67060-S6035 2N06L
Contextual Info: SPP80N06S2L-11 SPB80N06S2L-11 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 11 mΩ ID 80 A • Logic Level • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package Ordering Code

4141d

Abstract: BTS 19 switching power supply 3kw pcb Smart High-Side Power Switch 1 Channel
Contextual Info: BTS 4141D Smart High-Side Power Switch 1 Channel: 1 x 200mW Features Product Summary • Short circuit protection Overvoltage protection Vbb AZ · Current limitation Operating voltage Vbb(on) · Overload protection On-state resistance · Overvoltage protection (including load dump)

Contextual Info: PROFET Data sheet BTS 6144B/P Smart Highside Power Switch Reversave  • Reverse battery protection by self turn on of power MOSFET Features • Short circuit protection with latch • Current limitation • Overload protection • Thermal shutdown with restart

2N06LH5

Contextual Info: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated

INFINEON BSS100

Abstract: BTS4140
Contextual Info: BTS 4140 N Smart High-Side Power Switch One Channel: 1 x 1W Features Product Summary • Current controlled input Overvoltage protection Vbbin AZ · Short circuit protection Operating voltage Vbb(on) · Current limitation On-state resistance RON 62 V 4.9.60 V

2N08L50

Abstract: 58W smd smd 58w Q67060-S6062 marking code 58W 04
Contextual Info: SPD22N08S2L-50 Preliminary data OptiMOS â Power-Transistor Feature • N-Channel Product Summary • Enhancement mode VDS 75 V • Logic Level RDS on 50 mΩ • 175°C operating temperature ID 22 A • Avalanche rated P-TO-252-3-11 • dv/dt rated Type

PN08L07

Abstract: SMD MARKING "68A" Q67060-S6047 INFINEON smd PART MARKING SPB100N08S2L-07 Q67060-S6045
Contextual Info: SPP100N08S2L-07 SPB100N08S2L-07 OptiMOS =Power-Transistor Product Summary Feature 75 VDS
N-Channel RDS on
Enhancement mode max. SMD version ID
Logic Level P- TO263 -3-2
175°C operating temperature V 6.5 m
100 A P- TO220 -3-1
Avalanche rated
dv/dt rated

2N06LH5

Contextual Info: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated

4141D

Abstract: GPT09161
Contextual Info: BTS 4141D Smart High-Side Power Switch 1 Channel: 1 x 200mW Features Product Summary • Short circuit protection Overvoltage protection Vbb AZ · Current limitation Operating voltage Vbb(on) · Overload protection On-state resistance · Overvoltage protection (including load dump)

to220-7-180

Abstract: H8243 IL12 P-TO220-7-230 Q67060-S6058 power transistor for inductive load in to220 package
Contextual Info: P R O D U C T B R I E F The BTS 6144P is a single channel high-side power switch 9 mΩ in TO220-7-230 package. The BTS 6144B is the same high-side power switch in TO220-7-180 (SMD) package. They are fully protected by embedded protection functions including ReverSafe.

2N06LH5

Abstract: S6054 DIODE H5 SMD Q67060-S6055 smd diode H5 SPB80N06S2L-H5 ANPS071E SPP80N06S2L-H5
Contextual Info: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS =Power-Transistor Product Summary Feature 55 VDS
N-Channel R DS on
Enhancement mode ID
175°C operating temperature Type SPP80N06S2L-H5 Package Ordering Code P- TO220 -3-1 Q67060-S6054 Marking SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055

Q67060-S6002

Abstract: TC-130-W
Contextual Info: BTS 247 Z Speed TEMPFET  • N-Channel • Enhancement mode 1 • Logic Level Input 1 • Analog driving possible 5 • Fast switching up to 1 MHz VPT05166 5 VPT05165 • Potential-free temperature sensor with thyristor characteristics • Overtemperature protection

Q67060-S6005-A2

Abstract: GPT05167 P-TO220-7-230 P-TO220-7-3 Q67060-S6004-A2
Contextual Info: BTS 282 Z Speed TEMPFET  • N-Channel • Enhancement mode • Logic Level Input 1 1 • Analog driving possible 7 VPT05167 7 VPT05754 • Fast switching up to 1 MHz • Potential-free temperature sensor with thyristor characteristics • Overtemperature protection

PN0807

Abstract: SPB100N08S2-07 SPP100N08S2-07 smd diode UM 07 BSPB100N08S2-07 66a smd
Contextual Info: SPP100N08S2-07 SPB100N08S2-07 Preliminary data OptiMOS
=Power-Transistor Feature
N-Channel Product Summary
Enhancement mode VDS 75 V
175°C operating temperature RDS on max. SMD version 6.8 m
Avalanche rated ID 100 A
dv/dt rated P-TO263-3-2 Type

PN06L05

Abstract: ANPS071E SPB100N06S2L-05 SPP100N06S2L-05 Q67060-S6043
Contextual Info: SPP100N06S2L-05 SPB100N06S2L-05 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level P- TO263 -3-2 • 175°C operating temperature 55 V 4.4 mΩ 100 A P- TO220 -3-1 • Avalanche rated