QA1 POWER AMPLIFIER Search Results

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C64202L 64M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 4M-WORD BY 16-BIT WORD MODE / 2M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C64202L is a 67,108,864 bits synchronous mask-programmable ROM with multiplexed address bus.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32202L 32M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 2M-WORD BY 16-BIT WORD MODE / 1M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C32202L is a 33,554,432 bits synchronous mask-programmable ROM with multiplexed address bus.

MARKING CODE QA1

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32202L 32M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 2M-WORD BY 16-BIT WORD MODE / 1M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C32202L is a 33,554,432 bits synchronous mask-programmable ROM with multiplexed address bus.

tas t23

Abstract: QA1 power amplifier
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C64202L 64M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 4M-WORD BY 16-BIT WORD MODE / 2M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C64202L is a 67,108,864 bits synchronous mask-programmable ROM with multiplexed address bus.

QA1 power amplifier

Contextual Info: 3.3V, 2.7Gbps DUAL 2X2 CROSSPOINT SWITCH FEATURES SuperLite SY55859L DESCRIPTION • Pin-for-pin, plug-in compatible to the MAX3840 ■ Supply voltage operation: +3.3V ±10% ■ Low jitter: • 2ps rms random jitter • 5ps pk-pk deterministic jitter ■ Power saving output disable feature

QA1 power amplifier

Abstract: marking DA1
Contextual Info: SuperLite 3.3V, 2.7Gbps DUAL 2X2 CROSSPOINT SWITCH Micrel SuperLite™ SY55859L SY55859L FINAL FEATURES • Pin-for-pin, plug-in compatible to the MAX3840 ■ Supply voltage operation: +3.3V ±10% ■ Low jitter: • 2ps rms random jitter • 5ps pk-pk deterministic jitter

marking DA1

Abstract: MAX3840 MAX3840EGJ SY55858U SY55859L SY55859LMG SY55859LMI SY55859LMITR
Contextual Info: SuperLite 3.3V, 2.7Gbps DUAL 2X2 CROSSPOINT SWITCH Micrel, Inc. SY55859L SuperLite™ SY55859L FEATURES • Pin-for-pin, plug-in compatible to the MAX3840 ■ Supply voltage operation: +3.3V ±10% ■ Low jitter: • 2psRMS random jitter • 5psPP deterministic jitter

"Pin for Pin"

Abstract: leadframe marking DA1 MAX3840 MAX3840EGJ SY55854U SY55858U SY55859L SY55859LMI SY55859LMITR
Contextual Info: SuperLite SY55859L FINAL 3.3V, 2.7Gbps DUAL 2X2 CROSSPOINT SWITCH FEATURES DESCRIPTION • Pin-for-pin, plug-in compatible to the MAX3840 ■ Supply voltage operation: +3.3V ±10% ■ Low jitter: • 2ps rms random jitter • 5ps pk-pk deterministic jitter

MSM56V16800F

Abstract: active suspension
Contextual Info: FEDD56V16800F-01 1Semiconductor MSM56V16800F This version: November. 2000 Previous version :  2-Bank x 1,048,576-Word × 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800F is a 2-Bank × 1,048,576-word × 8-bit Synchronous dynamic RAM fabricated in

MSM54V24616

Abstract: QA1 power amplifier
Contextual Info: in im el Pr MSM54V24616 131,072-Word ¥ 16-Bit ¥ 2-bank SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM54V24616 is a 131,072-word ¥ 16-bit ¥ 2-bank synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and

active suspension

Abstract: MSM56V16800F
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

MD56V62160E

Abstract: active suspension MD56V62160E-10 MD56V62160E-7
Contextual Info: FEDD56V62160E-01 OKI Semiconductor MD56V62160E Issue Date: Feb. 4, 2002 4-Bank x 1,048,576-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62160E is a 4-Bank × 1,048,576-word × 16-bit Synchronous dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The device operates at 3.3 V. The inputs and outputs are LVTTL

active suspension

Abstract: MD56V62160E-XXTA MD56V62160E MD56V62160E-10 MD56V62160E-7 md56v62160
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

Contextual Info: FEDD56V16160F-01 1Semiconductor MSM56V16160F This version: January. 2001 Previous version :  2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM fabricated in

MSM56V16160F

Abstract: active suspension
Contextual Info: FEDD56V16160F-02 1Semiconductor MSM56V16160F This version: March. 2001 Previous version : January. 2001 2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM fabricated in

MSM54V24616

Abstract: QA1 power amplifier
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

MSM56V16800E

Abstract: active suspension MSM56V16800E-10 MSM56V16800E-8
Contextual Info: E2G1053-18-54 This version: Jul. 1998 MSM56V16800E ¡ Semiconductor MSM56V16800E ¡ Semiconductor 2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800E is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated

MSM54V24632A

Abstract: QFP100-P-1420-0
Contextual Info: Pr y ar in im el ¡ Semiconductor MSM54V24632A ¡ Semiconductor MSM54V24632A 11 Feb. 1998 131,072-Word ¥ 32-Bit ¥ 2-Bank SGRAM without Graphics Functions DESCRIPTION The MSM54V24632A is a synchronous graphics random access memory without graphics oriented functions; Block Write, Write per bit, Single write and Burst stop. It is organized as 128K

MSM56V16160D

Abstract: MSM56V16160D-10 MSM56V16160D-12 MSM56V16160DH-15
Contextual Info: Pr E2G1049-18-33 el im y 2-Bank ¥ 524,288-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160D/DH is a 2-bank ¥ 524,288-word ¥ 16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The

MSM56V16800D

Abstract: D-10 D-12 MSM56V16800D-10 MSM56V16800D-12 MSM56V16800DH-15
Contextual Info: Pr E2G1047-18-25 el im y 2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800D/DH is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The

md56v62160

Abstract: MD56V62160F-75
Contextual Info: FEDD56V62160F-02 OKI Semiconductor MD56V62160F Issue Date: Oct. 31, 2003 4-Bank x 1,048,576-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62160F is a 4-Bank × 1,048,576-word × 16-bit Synchronous dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The device operates at 3.3 V. The inputs and outputs are LVTTL

MSM54V24632A

Abstract: QFP100-P-1420-0
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

MSM56V16400D

Abstract: active suspension D-10 D-12 TSOPII44-P-400-0
Contextual Info: Pr E2G1046-18-25 el im y 2-Bank ¥ 2,097,152-Word ¥ 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400D/DH is a 2-bank ¥ 2,097,152-word ¥ 4-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The

active suspension

Abstract: MSM56V16160D-10 MSM56V16160D-12 MSM56V16160DH-15 msm56v16160d
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.