QFN-6X6 ROHM Search Results

fp31ff

Abstract: transistor 131 349 2110 FP31QF FP31QF-F FP31QF-PCB1900 FP31QF-PCB2140 FP31QF-PCB900 JESD22-A114 QFN-6x6 rohm
Contextual Info: FP31QF The Communications Edge TM Product Information 2-Watt HFET Applications • • • • • • Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain

fp31ff

Abstract: 113 marking code transistor ROHM HFET FP31QF FP31QF-F FP31QF-PCB1900 FP31QF-PCB2140 FP31QF-PCB900 transistor C1000
Contextual Info: FP31QF 2-Watt HFET Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain

113 marking code transistor ROHM

Abstract: A114 pnp FP31QF FP31QF-F FP31QF-PCB1900 FP31QF-PCB2140 FP31QF-PCB900 JESD22-A114
Contextual Info: FP31QF The Communications Edge TM 2-Watt HFET Product Information • • • • • • Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1

QFN-6x6 48

Abstract: FP31QF-F RF 4*4 mm QFN power amplifier ISM 900 MHz matched transistors transistor C1000 QFN-6x6 rohm
Contextual Info: FP31QF 2 – Watt HFET Product Information • • • • • • Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth

umt1n applications

Abstract: FP31QF-F RF amplifier
Contextual Info: FP31QF The Communications Edge TM 2-Watt HFET Product Information • • • • • • Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1

Contextual Info: FP31QF The Communications Edge TM 2-Watt HFET Product Information • • • • • • Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1

QFN-6x6 48

Abstract: 2W High Amplifier qfn FP31QF-F
Contextual Info: FP31QF The Communications Edge TM 2-Watt HFET Product Information • • • • • • Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1

Contextual Info: FP31QF 2 – Watt HFET Product Information Applications • RFID: HF, UHF, microwave • Readers Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain

FP31QF-F

Abstract: FP31QF-PCB1900 FP31QF-PCB2140 FP31QF-PCB900 JESD22-A114 FP31QF schematic diagram 500 watt power amplifier free d schematic diagram 800 watt power amplifier free d transistor C1000 Y
Contextual Info: FP31QF The Communications Edge TM Product Information 2-Watt HFET Applications x x x x x x RF Parameter 2 Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain Output P1dB Output IP3 (3) Noise Figure GND GND 25 GND GND GND 26 24 23 22

Contextual Info: FP31QF The Communications Edge TM 2-Watt HFET Product Information Units Min Typ Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1 Thermal Resistance Junction Temperature (2) mA mS V °C / W °C 1170 590 -2.0 RF Parameter (3) Units Min

Contextual Info: FP31QF The Communications Edge TM 2-Watt HFET Product Information Units Min Typ Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1 Thermal Resistance Junction Temperature (2) mA mS V °C / W °C 1170 590 -2.0 RF Parameter (3) Units Min

Contextual Info: FP31QF 2 – Watt HFET Product Information • RFID: HF, UHF, microwave • Readers • • • Industrial Portable Handheld Units Min Typ Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 Thermal Resistance Junction Temperature (2)

Contextual Info: FP31QF The Communications Edge TM Advanced Product Information 23 22 21 GND 20 GND GATE / 3 RF IN 19 DRAIN / RF OUT 16 GND GND 7 15 GND 8 9 10 11 12 13 14 GND 17 GND GND 6 GND 18 GND GND 5 GND GND 4 Function Gate / RF Input Drain / RF Output Pin No. 3 19 All other pins &

Contextual Info: FP31QF 2-Watt HFET Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain