QUADRANT PHOTODIODE Search Results
QUADRANT PHOTODIODE Result Highlights (4)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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OPT101P-JG4 |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 |
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OPT301M |
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Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 |
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OPT101P-J |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 |
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OPT101P |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 |
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QUADRANT PHOTODIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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InGaAs quadrantContextual Info: InGaAs PIN photodiodes G6849 series Quadrant type Features Applications Photosensitive area G6849 : φ2 mm quadrant element G6849-01: φ1 mm quadrant element Light spot position detection Measurement equipment Low noise High reliability Structure Parameter |
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G6849 G6849 G6849-01: G6849-01 KIRD1042E04 InGaAs quadrant | |
Contextual Info: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings |
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G6849 G6849 G6849-01: G6849-01 SE-171 KIRD1042E02 | |
AW100Contextual Info: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings |
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G6849 G6849 G6849-01: G6849-01 SE-171 KIRD1042E03 AW100 | |
G6849-01
Abstract: quadrant photodiode G6849 AK 1012
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G6849 G6849 G6849-01: G6849-01 SE-171 KIRD1042E02 G6849-01 quadrant photodiode AK 1012 | |
quadrant photodiode
Abstract: G6849 G6849-01
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G6849 G6849 G6849-01: G6849-01 SE-171 KIRD1042E01 quadrant photodiode G6849-01 | |
G6849
Abstract: G6849-01 quadrant photodiode
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G6849 G6849 G6849-01: G6849-01 SE-171 KIRD1042E03 G6849-01 quadrant photodiode | |
Contextual Info: Select Products Here TOX 9101 Quadrant Silicon Photodetector Go DESCRIPTION FEATURES The TOX 9101 is an N-Type quadrant silicon photodiode with quadrant separation of 0.0254 mm 0.001 inch . These photodiodes are typically used as position sensors for applications such as optical |
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com/catalog/tox9101/tox9101 | |
PSS1515Q-6-TO18
Abstract: PSS1515Q-6-C Silicon Photodiode Chip Photodiode, nm NEP
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PSS1515Q-6-TO18 PSS1515Q-6-TO18 PSS1515Q-6-C. PSS1515Q-6-C Silicon Photodiode Chip Photodiode, nm NEP | |
uv photodiode, GaP
Abstract: quadrant photodiode quadrant photodiode s4349 si pin photodiode KMPD1007E02 S4349 SE-171 KMPDB0126EA
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S4349 S4349 SE-171 KMPD1007E02 uv photodiode, GaP quadrant photodiode quadrant photodiode s4349 si pin photodiode KMPD1007E02 KMPDB0126EA | |
quadrant photodiode
Abstract: KMPD1007E02 S4349 SE-171 SPECIFICATIONS OF Photodiode
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S4349 S4349 SE-171 KMPD1007E02 quadrant photodiode KMPD1007E02 SPECIFICATIONS OF Photodiode | |
Contextual Info: PHOTODIODE Si PIN photodiode S4349 Quadrant Si PIN photodiode S4349 is a quadrant Si PIN photodiode having sensitivity in the UV to near IR spectral range. A quadrant element format allows position sensing such as for laser beam axis alignment. Features Applications |
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S4349 S4349 SE-171 KMPD1007E02 | |
quadrant photodiodeContextual Info: «Of T0X9108 Large Area Silicon Quadrant PIN Photodiode Taxas Optoelectronics, Inc. DESCRIPTION FEATURES Quadrant Geometry For Alignment and Tracking Applications Diameter of Active Area, 0.650 Inch Rise and Fall Times, 10 ns Typ at 900 nm Wavelength Dark Current 500 nA Typ per Quadrant |
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T0X9108 000D524 IH375) quadrant photodiode | |
quadrant photodiode
Abstract: PSS33Q-6-C PSS33Q-6-TO5
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PSS33Q-6-C PSS33Q-6-C PSS33Q-6-TO5. quadrant photodiode PSS33Q-6-TO5 | |
GaP photodiode
Abstract: quadrant photodiode
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S8594 S8594 SE-171 KMPD1054E01 GaP photodiode quadrant photodiode | |
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Silicon Photodiode Chip
Abstract: TO5 package quadrant photodiode PSS33Q-6-TO5 To5 transistor PSS33Q-6-C rise time of silicon photodiode photodiode chip silicon
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PSS33Q-6-TO5 PSS33Q-6-TO5 PSS33Q-6-C. Silicon Photodiode Chip TO5 package quadrant photodiode To5 transistor PSS33Q-6-C rise time of silicon photodiode photodiode chip silicon | |
quadrant photodiode
Abstract: PSS1515Q-6-C Silicon Photodiode Chip
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PSS1515Q-6-C PSS1515Q-6-C PSS1515Q-6-TO5. quadrant photodiode Silicon Photodiode Chip | |
InGaAs quadrant
Abstract: C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A
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C30845EH YAG-444-4AH DTC-140H InGaAs quadrant C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A | |
Contextual Info: PHOTODIODE Si APD S4402 φ1 mm quadrant APD Features Applications l Uniform element characteristics Quadrant format on one chip with φ1 mm active area ensures uniform characteristics between elements. l Single power supply operation Allows easy and simple operation. |
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S4402 SE-171 KAPD1002E02 | |
transistor 1BW
Abstract: S4402 SE-171 quadrant photodiode Si apd photodiode quadrant apd
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S4402 SE-171 KAPD1002E02 transistor 1BW S4402 quadrant photodiode Si apd photodiode quadrant apd | |
TOX9108
Abstract: large area quadrant photodiode quadrant photodiode quadrant PIN
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com/catalog/tox9108/tox9108 TOX9108 large area quadrant photodiode quadrant photodiode quadrant PIN | |
max232 rts cts
Abstract: QP100-6 QP1.16-6 quadrant detector QP50-6 QP50-6-SD
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QP50-6 QP100-6 QP50-6SD 50mm2 max232 rts cts QP100-6 QP1.16-6 quadrant detector QP50-6 QP50-6-SD | |
S239P
Abstract: quadrant detector quadrant photodiode CD S 239 P s 239 l L05 diode 1S239
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S239P D-74025 quadrant detector quadrant photodiode CD S 239 P s 239 l L05 diode 1S239 | |
Contextual Info: QUADRANT PHOTODIODE 5 mm2 SXUVPS4C Dimensions are in inch [metric] units. FEATURES • TO-5, 5 pin header • Windowless package ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PER ELEMENT PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Per Quadrant 1.25 mm2 Responsivity, R |
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254nm | |
Contextual Info: QUADRANT PHOTODIODE 5 mm2 SXUVPS4C Dimensions are in inch [metric] units. FEATURES • TO-5, 5 pin header • Windowless package ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PER ELEMENT PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS Per Quadrant 5 mm2 Responsivity, R |
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254nm |