QUADRANT SILICON PHOTODIODE Search Results

Contextual Info: Select Products Here TOX 9101 Quadrant Silicon Photodetector Go DESCRIPTION FEATURES The TOX 9101 is an N-Type quadrant silicon photodiode with quadrant separation of 0.0254 mm 0.001 inch . These photodiodes are typically used as position sensors for applications such as optical

PSS1515Q-6-TO18

Abstract: PSS1515Q-6-C Silicon Photodiode Chip Photodiode, nm NEP
Contextual Info: DATA SHEET PSS1515Q-6-TO18 SILICON PHOTODIODE TYPE PSS1515Q-6-TO18 PSS1515Q-6-TO18 is a quadrant silicon photodiode with a very small active area of 0.3 mm2 for each quadrant. Quadrant photodiodes find applications in electro-mechanical apparatus and are frequently

quadrant photodiode

Abstract: PSS33Q-6-C PSS33Q-6-TO5
Contextual Info: DATA SHEET PSS33Q-6-C SILICON PHOTODIODE TYPE PSS33Q-6-C CHIP PSS33Q-6-C is a quadrant silicon photodiode chip with an active area of 1.42 mm2 for each quadrant. Quadrant photodiodes find applications in electro-mechanical apparatus and are frequently used in

Silicon Photodiode Chip

Abstract: TO5 package quadrant photodiode PSS33Q-6-TO5 To5 transistor PSS33Q-6-C rise time of silicon photodiode photodiode chip silicon
Contextual Info: DATA SHEET PSS33Q-6-TO5 SILICON PHOTODIODE TYPE PSS33Q-6-TO5 PSS33Q-6-TO5 is a quadrant silicon photodiode chip with an active area of 1.42 mm2 for each quadrant. Quadrant photodiodes find applications in electro-mechanical apparatus and are frequently used in conjunction with laser beams for alignment and target acquisition. It is mounted in a

quadrant photodiode

Abstract: PSS1515Q-6-C Silicon Photodiode Chip
Contextual Info: DATA SHEET PSS1515Q-6-C SILICON PHOTODIODE TYPE PSS1515Q-6-C PSS1515Q-6-C is a quadrant silicon photodiode chip with an active area of 0.3 mm2 for each quadrant. Quadrant photodiodes find applications in electro-mechanical apparatus and are frequently used in conjunction with laser beams for alignment and target acquisition. This chip may be mounted

quadrant photodiode

Contextual Info: «Of T0X9108 Large Area Silicon Quadrant PIN Photodiode Taxas Optoelectronics, Inc. DESCRIPTION FEATURES Quadrant Geometry For Alignment and Tracking Applications Diameter of Active Area, 0.650 Inch Rise and Fall Times, 10 ns Typ at 900 nm Wavelength Dark Current 500 nA Typ per Quadrant

TOX9108

Abstract: large area quadrant photodiode quadrant photodiode quadrant PIN
Contextual Info: Select Products Here Go DESCRIPTION TOX 9108 Large Area Silicon Quadrant PIN Photodiode FEATURES The TOX 9108 is a high speed, quadrant-geometry, high-resistivity P-type silicon photodiode. It is a precision device designed specifically for application in laser alignment

max232 rts cts

Abstract: QP100-6 QP1.16-6 quadrant detector QP50-6 QP50-6-SD
Contextual Info: Data Sheet Pacific Silicon Sensor Inc. Quadrant Photodiodes: Positioning Detectors Quadrant Photodiodes are an array of 4 individual photodiodes on a single Silicon substrate. This guarantees that each of the elements will match closely to each other in their specifications and

S239P

Abstract: quadrant detector quadrant photodiode CD S 239 P s 239 l L05 diode 1S239
Contextual Info: TELEFUNKEN Semiconductors S 239 P Silicon PIN Photo Quadrant Detector Description S239P is a monolithic silicon PIN photodiode array in a quadrant configuration. Four photodiodes on a single chip with a common cathode and separated by only 10æm are mounted

S 239 P

Abstract: S239P
Contextual Info: Te m ic TELEFUNKEN Semiconductors S 239 P Silicon PIN Photo Quadrant Detector Description S239P is a monolithic silicon PIN photodiode array in a quadrant configuration. Four photodiodes on a single chip with a common cathode and separated by only 10æm are mounted

LARGE SURFACE AREA PHOTODIODE

Abstract: large area quadrant photodiode quadrant photodiode quadrant silicon photodiode QP50-6 QP50-6-TO8 QP50-6-SM 50 um photodiode
Contextual Info: Data Sheet Pacific Silicon Sensor Inc. QP50-6-SM LARGE AREA QUADRANT SILICON PHOTODIODE QP50-6-SM QP50-6-SM is a large area quadrant silicon photodiode with a total active area of 50 mm2, in a surface mounting package. The part features very small separation between segments of 42 µm.

large area quadrant photodiode

Abstract: quadrant photodiode LARGE SURFACE AREA PHOTODIODE quadrant silicon photodiode PSS-QP50-6-SM
Contextual Info: Data Sheet Pacific Silicon Sensor Inc. PSS-QP50-6-SM LARGE AREA QUADRANT SILICON PHOTODIODE PSS-6-SM PSS-QP50-6-SM is a large area quadrant silicon photodiode with a total active area of 50mm2, in a surface mounting package. The part features very small separation between segments of 42µm. The

Contextual Info: DATASHEET Photon Detection YAG YAG-444-4AH Silicon PIN Quadrant Detector Key Features and Benefits The YAG series high-performance Si PIN photodiodes are well-suited for applications such as munition guidance, laser spot tracking and others. E T YAG series of Silicon PIN quadrant detectors are

large area quadrant photodiode

Abstract: quadrant photodiode LARGE SURFACE AREA PHOTODIODE QP50-6 PSS-QP50-6-C PSS-QP50-6-SM rise time of photodiode
Contextual Info: DATA SHEET PSS-QP50-6-C LARGE AREA QUADRANT SILICON PHOTODIODE PSS-QP50-6-C PSS-QP50-6-C is a large area quadrant silicon photodiode with very small separation between quadrants 42 µm . The total active area is 50 mm2. The photodiode may be biased with a maximum voltage of 15 volts. This

Siemens sfh204

Abstract: siemens SFH nm SFH204
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 4?E V m ä23SbOS 0027M5S 3 « S I E G SIEM ENS SFH204 SILICON FOUR QUADRANT PHOTODIODE T-HI-5I Dimensions in Inches mm 21 (5 .4 ) FEATURES MEASUREMENT IN v !" • Miniature Size • Four Quadrant Active Sections • Close Spacing of Contacts, 12 ¿tm

Contextual Info: T O X 9 10 1 Q u a d ra n t S ilic o n P h o to d e te c to r DESCRIPTION FEATURES The TOX 9101 is an N-Type quadrant silicon photodiode with quadrant separation of 0.0254 mm 0.001 inch . These photodiodes are typically used as position sensors for applications such as

1e15

Contextual Info: SCA-006CQD Silicon PIN Photodiode Data Sheet Description Applications The SCA-006CQD features a four matched quadrant • • • • • elements and are a high sensitive silicon PIN photodiodes for Position Sensing Optical Encoders Optical Alignment Angular Displacement

SCA-006CQD

Abstract: quadrant photodiode annular anode
Contextual Info: SCA-006CQD Silicon PIN Photodiode Data Sheet Description Applications The SCA-006CQD features a four matched quadrant • • • • • elements and are a high sensitive silicon PIN photodiodes for Position Sensing Optical Encoders Optical Alignment Angular Displacement

Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Quadrant Type PDB-C204 DETECTORS INC. PACKAGE DIMENSIONS INCH mm Ø.600 [15.24] Ø.550 [13.97] .182 [4.62] .075 [1.91] Ø.475 [12.07] .032 [0.81] ANODE #1 .032 [0.81] WINDOW CAP .500 [12.70] MIN

quadrant photodiode

Contextual Info: PHOTONIC Silicon Photodiode, U.V. Enhanced Photoconductive Quadrant Type PDU-C203-Q DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] QUARTZ WINDOW CAP WELDED 0.030 [0.76] Ø0.325 [8.25] Ø0.250 [6.35] 0.168 [4.26] 0.075 [1.91] WIRE BONDS CL 0.500 [12.70] MIN

Contextual Info: PHOTONIC Silicon Photodiode, U.V. Enhanced Photoconductive Quadrant Type PDU-C204-Q DETECTORS INC. PACKAGE DIMENSIONS INCH mm 0.182 [4.62] Ø0.550 [13.97] Ø0.475 [12.07] 0.032 [0.81] 0.075 [1.91] QUARTZ WINDOW CAP 0.032 [0.81] 0.500 [12.70] MIN CL Ø0.600

PDB-C204

Abstract: quadrant photodiode
Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Quadrant Type PDB-C204 DETECTORS INC. PACKAGE DIMENSIONS INCH mm 0.182 [4.62] Ø0.550 [13.97] Ø0.475 [12.07] 0.032 [0.81] 0.075 [1.91] WINDOW CAP 0.032 [0.81] 0.500 [12.70] MIN C L Ø0.600 [15.24]

Contextual Info: PHOTONIC DETECTORS INC. Silicon Photodiode, Near I.R. Photoconductive Quadrant Type PDI-C204-F PACKAGE DIMENSIONS INCH mm 0.182 [4.62] Ø0.550 [13.97] Ø0.475 [12.07] 0.075 [1.91] 0.032 [0.81] WINDOW CAP 0.032 [0.81] 0.500 [12.70] MIN C L Ø0.600 [15.24]

SFH244

Contextual Info: SIEMENS SFH244 S SILICON TOUR QUADRANT PHOTODIODE Package Dimensions in Inches mm lel-141 (0.3) |A l (2 0) — *j p" *-oca,'on jn ° 322± 04 ( 8 .2 ± 0 . 1) Anode D .118±.008 (3.0*02) FEATURES M axim um Ratings * Silicon Photodiode in Planar Technology