R-T CURVES RJC Search Results

TD2405

Contextual Info: BULLETIN 603A CRYDOM SERIES T r I r Triac Output Solid-State Relay 5 Thru 25 Amp AC Output C R Y D S 00121 Series T/T riac Output Solid-State, Photo-Isolated Power Relays SPST* • Low Cost • Zero Voltage Switching • U.L. Recognized, CSA Certified • VDE Conformance

dallas 2501

Abstract: DALLAS SEMICONDUCTOR 2501 ultrasonic transducer TM-1 TLV2231 TLV2231Y SOT-23 "vhz" AI mm sot 25
Contextual Info: TLV2231, TLV2231Y Advanced LinCMOS RAIL-TO-RAIL LOW-POWER SINGLE OPERATIONAL AMPLIFIERS S L O S 1 5 8 A - J U N E 1 9 9 6 - R E V IS E D J A N U A R Y 199 7 • Output Swing Includes Both Supply Rails • Low Noise . . . 15 nV/VHz Typ at f = 1 kHz • Low Input Bias C u rre n t. . . 1 pA Typ

v2252a

Abstract: TLV2252 v2252a 8 pin ic TLV2252A TLV2252AID TLV2252AIP TLV2252AIPWLE TLV2252ID TLV2252IDR TLV2252IP
Contextual Info: TLV2252, TLV2252A, TLV2252Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW POWER, DUAL OPERATIONAL AMPLIFIERS ^ BER 1994 • • • • Common-Mode Input Voltage Range Includes Negative Rail Low Input Offset Voltage

0E-18

Abstract: TLV2254 TLV2254A TLV2254AID TLV2254AIN TLV2254AIPWLE TLV2254ID TLV2254IDR TLV2254IN TLV2254Y
Contextual Info: TLV2254, TLV2254A, TLV2254Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW POWER, QUAD OPERATIONAL AMPLIFIERS _ SLOS14D- DECEMBER 1994 Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/VHi Typ at f = 1 kHz

transistor fb 31n

Abstract: TLV2254 TLV2254A TLV2254AID TLV2254AIN TLV2254AIPWLE TLV2254ID TLV2254IDR TLV2254IN TLV2254Y
Contextual Info: TLV2254, TLV2254A, TLV2254Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW POWER, QUAD OPERATIONAL AMPLIFIERS SLOS140 - DECEMBER 1994 Common-Mode Input Voltage Range Includes Negative Rail Low Input Offset Voltage 850 |iV Max at TA = 25°C Wide Supply Voltage Range

Contextual Info: ü i h a r r u j , c o n d u c o » RHRG7540, RHRG7550, RHRG7560 is 75A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperlast with Soft R ecovery.<55ns • Operating Tem p eratu re. +175°C

.dd2

Abstract: TLV2731 TLV2731CDBV TLV2731IDBV TLV2731Y
Contextual Info: TLV2731, TLV2731Y Advanced LinCMOS RAIL-TO-RAIL LOW-POWER SINGLE OPERATIONAL AMPLIFIERS SLOS198 - AUGUST 1997 • Output Swing Includes Both Supply Rails • Low Noise . . . 15 nV/VHz Typ at f = 1 kHz • Low Input Bias C u rre n t. . . 1 pA Typ • Fully Specified for Single-Supply 3-V and

Rlp5N08le

Contextual Info: 4302E71 0054043 100 • H arris May 1992 HAS RLP 5 N 08 LE Current Limited ESD Protected N-Channel Enhancem ent-Mode Power Field-Effect Transistor Features Package TO -220A B TOP VIEW • 5 .5 A , 8 0 V • R D S O N . 0 . 1 2 0

RLP5N08LE

Abstract: rlp5n08
Contextual Info: RLP5N08LE HARRIS M ay 1 992 Current Limited ESD Protected N-Channel Enhancement-Mode Power Field-Effect Transistor Features Package • 5.5A, 80V T O -2 2 0 A B T O P V IE W • r DS 0 N . 0.12il • iL im it. 5.5A to 8.5A at + 1 50OC

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

TLC2252A1

Abstract: tlc22621 TLC2252 TLC2252A TLC2252AID TLC2252AIP TLC2252CD TLC2252CPWLE TLC2252ID TLC2252Y
Contextual Info: TLC2252, TLC2252A, TLC2252Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW POWER, DUAL OPERATIONAL AMPLIFIERS SLOS139-DECEMBER 1994 C o m m on -M ode Input Voltage Range Includes N egative Rail • O utp ut S w ing inclu des Both Supply Ralls

Contextual Info: m CA3078 HARRIS S E M I C O N D U C T O R March1993 Micropower Operational Amplifier Features Description • Low Standby Power. As Low As 700nW The CA3078 and CA3078A are high gain monolithic operational amplifiers which can deliver milliamperes of

tlc22541

Abstract: 2SC2030 std 15007 TLC2254 0E-18 TLC2254A TLC2254AID TLC2254CD TLC2254CN TLC2254CPWLE
Contextual Info: TLC2254, TLC2254A, TLC2254Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW POWER, QUAD OPERATIONAL AMPLIFIERS SLOS142 - DECEMBER 1994 Common-Mode Input Voltage Range Includes Negative Rail Low Input Offset Voltage 850 iV Max at TA = 25°C (TLC2254A Macromodel Included

TB23P06V

Abstract: TB23P 81 210 w 25 is which transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB23P06V TMOS V Power Field Effect Transistor D2PAK for Surface Mount Motorola Pr»f«rr*d Dovtce TMOS POWER FET 23 AMPERES 60 VOLTS ROS on = 0.120 OHM P-Channel Enhancement-Mode Silicon Gate

R-T curves RJC

Abstract: FLUKE 381 AN1025 AN-569 DV240 NDS9956 tesec DV240 fluke 52 Mosfet DF 50
Contextual Info: N 2. Theory Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong When a device operates in a system under the steady-state condition, the maximum power dissipation is determined by the maximum junction temperature rating, the ambient temperature, and the junction-to-ambient

Contextual Info: OPA129 B U R R -B R O W N Ultra-Low Bias Current DifeP OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • ULTRA-LOW BIAS CURRENT: 10OTA max LOW OFFSET: 2mV max LOW DRIFT: 10|iV/°C max HIGH OPEN-LOOP GAIN: 94dB min

AD8010s

Abstract: jr77
Contextual Info: 200 m AO utput Current High Speed Amplifier ANALOG DEVICES AD8010 FEATURES 200 m A o f O u t p u t C u r r e n t 9 n Load SFDR - 5 4 dBe @ 1 M Hz CO NNECTION D IA G R A M S 8-Lead DI P and SOI C D i f f e r e n t i a l Gai n Er r or 0.04%, f = 4.43 M Hz D i f f e r e n t i a l Phase E r r o r 0.06°, f = 4.43 MHz

sg4501

Abstract: SG3501AJ SG4501N SG2501 SG1501AT SG1501 SG3501 SG2501 VOLTAGE REGULATOR DUAL SG1501AJ SG2501AT
Contextual Info: SG1501AJSG2501A/SG3501A/SG4501 SILICON EENERAL L IN E A R IN T E G R A T E D C IR C U IT S DUAL VOLTAGE TRACKING REGULATOR DESCRIPTION FEATURES This circuit is adual polarity tracking regulator designed to provide balanced positive and negative output voltages at currents up to

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

R-T curves RJC

Abstract: AN1028 AN-569 DV240 NDS9956
Contextual Info: N AN1028 April, 1996 Maximum Power Enhancement Techniques for SOT-223 Power MOSFETs Discrete POWER & Signal Technologies 2. Theory Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong When a device operates in a system under the steady-state condition, the maximum power

R-T curves RJC

Abstract: tesec DV240 AN-569 DV240 NDS9956 AN1025 SuperSOTTM -3 Fluke 16 thermocouple FLUKE 52
Contextual Info: AN1025 April, 1996 Maximum Power Enhancement Techniques for SuperSOTTM-3 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices.

BYW51

Abstract: 200G BYW51-200
Contextual Info: BYW51−200 SWITCHMODEt Power Rectifier This state−of−the−art device is designed for use in switching power supplies. Features • • • • • • • http://onsemi.com Ultrafast 35 Nanosecond Recovery Time 175°C Operating Junction Temperature Popular TO−220 Package

tesec DV240

Abstract: AN1029 AN-569 DV240 NDS9956 213 so8
Contextual Info: AN1029 April, 1996 Maximum Power Enhancement Techniques for SO-8 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus

R-T curves RJC

Abstract: motorola application note AN-569 tesec DV240 AN1028 AN-569 DV240 NDS9956
Contextual Info: AN1028 April, 1996 Maximum Power Enhancement Techniques for SOT-223 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus