R04003 Search Results

Contextual Info: RF2337 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers Product Description The RF2337 is a general purpose, low-cost RF amplifier

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET SKY65376-11: 2500 to 2570 MHz High Linearity, Active Bias Low Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure  Low noise, high linearity systems  Macro base stations  Small cells RF_OUT

Contextual Info: RMPA0951AT 3V Cellular CDMA Power Amplifier Module General Description Features The RMPA0951AT is a dual mode, small-outline Power Amplifier Module PAM for Cellular CDMA personal communication system applications. The PA is internallymatched to 50Ω and DC blocked which minimizes the use

RF1196

Abstract: DS1103
Contextual Info: RF1196 RF1196SDM with Integrated B1 Duplexer: QB GSM, TB UMTS SDM WITH INTEGRATED B1 DUPLEXER: QB GSM, TB UMTS Package: Module, 4.5mmx4.5mmx1.0 mm RF1196 GSM Rx1 GSM Rx2 Features        GSM Rx3 Very Low IL and High Isolation: GSM LB Tx: 1.1dB

RF2334

Contextual Info: RF2334 4 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers GENERAL PURPOSE AMPLIFIERS

Contextual Info: RF2336 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers Product Description The RF2336 is a general purpose, low-cost RF amplifier

transistor marking code 1325

Abstract: R04003 ims pcb filtronic Solid State
Contextual Info: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency

Contextual Info: RF2333 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers Product Description The RF2333 is a general purpose, low-cost RF amplifier

band 1 duplexer

Abstract: RF1196 1085MHz umts duplexer LTE duplexer
Contextual Info: RF1196 RF1196SDM with Integrated B1 Duplexer: QB GSM, TB UMTS SDM WITH INTEGRATED B1 DUPLEXER: QB GSM, TB UMTS Package: Module, 4.5mmx4.5mmx1.0 mm RF1196 GSM Rx1 GSM Rx2 Features        GSM Rx3 Very Low IL and High Isolation: GSM LB Tx: 1.1dB

Contextual Info: RF2336 4 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers GENERAL PURPOSE AMPLIFIERS

Contextual Info: RF2335 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers Product Description The RF2335 is a general purpose, low-cost RF amplifier

sky77506

Abstract: S2473
Contextual Info: DATA SHEET SKY65374-11: 1850 to 1915 MHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure  Low noise, high linearity systems  Macro base stations  Small cells RF_OUT

transistor SMD P1f

Abstract: Transistor p1f MARKING P1F SMD Transistor p1f p1f on FPD1000AS MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic
Contextual Info: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available

grm36 murata

Abstract: GRM36 R04003 RR0816 TFL0510
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

transistor SMD P2F

Abstract: smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 FPD1000AS T491B105M035AS7015 filtronic Solid State
Contextual Info: FPD1000AS Datasheet v3.0 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency

bluetooth module BC4

Abstract: SP8T RFMD RF1193 SP8T switch package ghz SP10T switch GSM900 SP10T SP9T SP8T antenna switch GSM400
Contextual Info: RF1193A SP10T ANTENNA SWITCH MODULE QUADBAND GSM, QUADBAND UMTS Package Style: QFN, 26-pin, 3.0 mm x 3.8 mm x 0.85 mm Features          Very Low Insertion Loss Best in Class Harmonic Attenuation with Integated LPF: ETSI Compliance

PC8211TK

Abstract: 6-PIN marking f1
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8211TK SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The μPC8211TK is a silicon germanium SiGe monolithic integrated circuit designed as a low noise amplifier for GPS and mobile communications.

Contextual Info: DATA SHEET SKY65373-11: 1710 to 1785 MHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure  Low noise, high linearity systems  Macro base stations  Small cells VGC

Contextual Info: DATA SHEET SKY65372-11: 699 to 748 MHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure  Low noise, high linearity systems  Macro base stations  Small cells RF_OUT

BC-15

Contextual Info: RF1193 SP10T ANTENNA SWITCH MODULE QUADBAND GSM, QUADBAND UMTS Package Style: QFN, 26-pin, 3.0 mm x 3.8 mm Features          Very Low Insertion Loss Best in Class Harmonic Attenuation with Integated LPF: ETSI Compliance Exceptional Linearity Performance

Contextual Info: RF1480 SP8T SWITCH VDD SPI_CS SPI_CLK SPI_DATA AUX_SPI_VDD RoHS Compliant & Pb-Free Product Package Style: QFN, 20-pin, 3.5mmx3.5mm 20 19 18 17 16 Features ANT VDD =1.5V to 3.0V ̈ AuxSPI VDD =1.5V to 3.0V ̈ High Linearity IMD3 <108dBm, IMD2 <-103dBm Harmonics: -83dBcat1GHz

HS350

Abstract: R04003
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: V42100 M/A-COM Surface Mount Voltage Controlled Oscillator WLAN 2050 - 2150 MHz Features • • • • LSM4 Package Miniature SMT Package Low Phase Noise Highly Linear Tuning +3V Operation Description The V42100 is a fundamental single ended oscillator designed for