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    rjh60f5

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching R07DS0055EJ0300 Rev.3.00 Nov 24, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		PDF RJH60F5DPK R07DS0055EJ0300 PRSS0004ZE-A curren9044 rjh60f5

    RJH60F5

    Abstract: RJH60F5DPK
    Text: Preliminary Datasheet RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching R07DS0055EJ0300 Rev.3.00 Nov 24, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		PDF RJH60F5DPK R07DS0055EJ0300 PRSS0004ZE-A RJH60F5 RJH60F5DPK