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RJH60F7 Abstract: RJH60F7DPQ-A0 rjh60f7dp RJH60F7DPQ PRSS0003ZH-A Contextual Info: Preliminary Datasheet RJH60F7DPQ-A0 0B 600 V - 50 A - IGBT High Speed Power Switching R07DS0328EJ0200 Rev.2.00 Jul 22, 2011 Features 1B • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package	Original	RJH60F7DPQ-A0 R07DS0328EJ0200 PRSS0003ZH-A O-247A) RJH60F7 RJH60F7DPQ-A0 rjh60f7dp RJH60F7DPQ PRSS0003ZH-A	PDF
Contextual Info: Preliminary Datasheet RJH60F7DPQ-A0 B 600 V - 50 A - IGBT High Speed Power Switching R07DS0328EJ0200 Rev.2.00 Jul 22, 2011 Features B 1 • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package	Original	RJH60F7DPQ-A0 R07DS0328EJ0200 PRSS0003ZH-A O-247A)	PDF

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RJH60F7

Abstract: RJH60F7DPQ-A0 rjh60f7dp RJH60F7DPQ PRSS0003ZH-A
Contextual Info: Preliminary Datasheet RJH60F7DPQ-A0 0B 600 V - 50 A - IGBT High Speed Power Switching R07DS0328EJ0200 Rev.2.00 Jul 22, 2011 Features 1B • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

Original

RJH60F7DPQ-A0 R07DS0328EJ0200 PRSS0003ZH-A O-247A) RJH60F7 RJH60F7DPQ-A0 rjh60f7dp RJH60F7DPQ PRSS0003ZH-A

PDF

Contextual Info: Preliminary Datasheet RJH60F7DPQ-A0 B 600 V - 50 A - IGBT High Speed Power Switching R07DS0328EJ0200 Rev.2.00 Jul 22, 2011 Features B 1 • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

Original

RJH60F7DPQ-A0 R07DS0328EJ0200 PRSS0003ZH-A O-247A)

PDF