R07DS0758EJ0100 Search Results
R07DS0758EJ0100 Datasheets Context Search
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Contextual Info: Data Sheet PA3753GR R07DS0758EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The μPA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application. Features • Dual chip type • Low on-state resistance ⎯ RDS on = 56 m MAX. (VGS = 10 V, ID = 2.5 A) |
Original |
PA3753GR R07DS0758EJ0100 PA3753GR PA3753GR-E1-AT PA3753GR-E2-AT | |
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Contextual Info: Data Sheet PA3753GR R07DS0758EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The μPA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application. Features • Dual chip type • Low on-state resistance ⎯ RDS on = 56 mΩ MAX. (VGS = 10 V, ID = 2.5 A) |
Original |
PA3753GR R07DS0758EJ0100 PA3753GR PA3753GR-E1-AT PA3753GR-E2-AT |