R25 2SC3356 Search Results

2SC3356

Abstract: marking r25 sot23 r25 marking NPN R25 QW-R206-024 2SC3356 R25 sot-23
Contextual Info: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER

Contextual Info: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER

2SC3356R25

Abstract: 2SC3356 2SC3356R 2SC3356 r25 r25 marking R25 2sc3356 2SC3356 R25 sot-23
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3356 Features • • • Low noise and high gain High power gain Marking Code: 2SC3356=R25 NPN Silicon Epitaxial Transistors Maximum Ratings

2SC3356 Application Note

Abstract: 2sc3356 2SC3356R25 2SC3356 r25
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3356 Features • • • • Low noise and high gain High power gain Marking Code: 2SC3356=R25 Case Material: Molded Plastic. UL Flammability

R24 marking

Abstract: 2SC3356 NPN R25 Transistor R25 r25 transistor SOT R25 marking r25 NPN R24 marking DATASHEET R25 2sc3356 r25 marking
Contextual Info: 2SC3356 2SC3356 SOT-323 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECOTR FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage 20 V V(BR)CBO: Operating and storage junction temperature range Unit: mm TJ, Tstg: -55℃ to +150℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECOTR FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current 0.1 A ICM: Collector-base voltage

transistor code R24

Abstract: R24 marking code transistor SOT R23 Transistor R25 r25 transistor transistor R24 r23 transistor SOT R25 2SC3356W R24 transistor
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC3356W FEATURES z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz z Pb Lead-free High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS

2SC3356

Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS
Contextual Info: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

GE 2646

Abstract: 2SC3356 r25 CD/GE S 2646
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS T he 2 S C 3 3 5 6 is an NPN silico n ep ita xia l tra n sisto r d e sig n e d for low Units: mm noise a m p lifie r at VH F, U H F and C A T V band.

transistor NEC D 588

Abstract: IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.

SOT R23

Abstract: marking R24 2SC3356 SOT R25 r25 q
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

SOT R23

Abstract: 2SC3356 marking R24 r25 q
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, z Low Noise and High Gain z High Power Gain 3. COLLECTOR UHF and CATV band.

2SC3356

Abstract: 2SC3356 to 92 NPN R25 R24 marking DATASHEET marking r25 NPN r25 q
Contextual Info: 2SC3356 SOT-23-3L TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 PCM: 1. 02 Power dissipation 0. 35 1. 9 Collector current ICM: 0.1 A Collector-base voltage 20 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

Contextual Info: Transistors IC SMD Type Product specification 2SC3356 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High power gain. 0.55 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise and high gain. 0.4 3

Contextual Info: 2SC3356 High-Frequency Amplifier Transistor NPN Silicon COLLECTOR 3 3 P b Lead Pb -Free 2 BASE 1 2 1 EMITTER FEATURES SOT-23 * Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SC3356 SMD

Abstract: marking r25 sot23 NPN R25 SOT R23 Transistor R25 smd 2SC335 r25 marking 2SC3356 R24 marking DATASHEET SMD R25
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High power gain. 0.55 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise and high gain.

2SC3356

Abstract: R24 marking DATASHEET r25 marking 2SC3356 Application Note Low Noise uhf transistor NPN R25 marking r25 sot23 r25 q
Contextual Info: 2SC3356 NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES    SOT-23 Low Noise Amplifier at VHF, UHF and CATV band Low Noise and High Gain High Power Gain

2SC3356

Abstract: IC nec 555 transistor 1431 T marking 544 low noise amplifier
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

marking r25

Abstract: transistor amplifier VHF/UHF NPN R25 hFE CLASSIFICATION Marking 24 2SC33 Transistor R25 R24 marking code transistor R24 marking DATASHEET SOT R23 SOT R25
Contextual Info: 2SC3356F NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES A Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain

2SC3356 s2p

Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

2SC3356 s2p

Abstract: 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

2SC3356 Application Note

Abstract: 2SC3356 h 125 tam SOT R23 marking r25 sot23 r25 q 2SC3356 R25 sot-23
Contextual Info: 2SC3356 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 A