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    R2N P1F TRANSISTOR Search Results

    R2N P1F TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    antena microondas

    Abstract: circuito sensor capacitivo Denso radar sensores capacitivos R2N P1F transistor A5E024 bocina transistor J1F LUT400 SENSORES INDUCTIVOS
    Text: 4 Siemens AG 2014 Medida de nivel 4/2 Sinopsis de productos 4/9 Detección de nivel Sensores capacitivos Medición continua continuación Accesorios para sistemas ultrasónicos 4/185 – Bridas de fijación EA 4/187 – Soportes de montaje FMS 4/189 – Sensor de temperatura TS-3


    Original     		PDF LR200 CLS300 LR250 7ML1830-1HA 7ML1830-1MC 7ML1830-1MM antena microondas circuito sensor capacitivo Denso radar sensores capacitivos R2N P1F transistor A5E024 bocina transistor J1F LUT400 SENSORES INDUCTIVOS