R5 DIOD Search Results

R5478

Contextual Info: Li-ION/POLYMER 1CELL PROTECTOR No. EA-291-121009 R5 4 7 5 N /R5 4 7 8 N SERI ES OUTLINE The R5475N/R5478Nxxxxx Series are high voltage CMOS-based protection ICs for over-charge/discharge of rechargeable one-cell Lithium-ion Li+ / Lithium polymer excess load current, further include a short circuit

Diode Equivalent 1n4148

Abstract: 2n2219 equivalent transistor equivalent transistor R5 2n2219 equivalent diode 1n4148 equivalent resistor MICROWAVE TRANSISTOR equivalent diode for 1n4148 equivalent 2N2219 transistor 1N4148
Contextual Info: Philips Semiconductors Product specification Microwave Transistors General APPLICATION INFORMATION COMPONENT DESCRIPTION VALUE A amplifier D.U.T. microwave transistor TR transistor D diode C 1,C 2 tantalum capacitor 22 nF, 50 V R1 resistor 2.2 kß ±5% R2, R3, R5, R6

MBN1200H45E2-H

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09017 R5 MBN1200H45E2-H P1 Preliminary Specification Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

G15BB

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09025 R5 P1 MBN500H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

MBN1800E17D

Contextual Info: Spec.No.IGBT-SP-02006 R5 IGBT MODULE MBN1800E17D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.

Contextual Info: Spec.No.IGBT-SP-02008 R5 IGBT MODULE MBN900D45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES  High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  Low noise due to ultra soft fast recovery diode.

MBN1800E17D

Contextual Info: Spec.No.IGBT-SP-02006 R5 IGBT MODULE MBN1800E17D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.

MBN1600EB17D

Contextual Info: Spec.No.IGBT-SP-03002 R5 IGBT MODULE MBN1600EB17D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.

MBN1200E33D

Abstract: Hitachi DSA0047
Contextual Info: Relation No.IGBT-SP-02005 R5 IGBT MODULE MBN1200E33D TENTATIVE SPECIFICATION Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.

datasheet micro sd

Abstract: LMV712 MSOP10 SMD10 smd diode code sd smd diode S
Contextual Info: National News LMV712 December 2001 www.national.com/pf/LM/LMV712.html LMV712, Dual Operational Amplifier Typical Application Circuit U1 GSM Antenna GSM PA C1 RF Signal U2 C2 In Out Input Output Directional Coupler VPC Coupled C3 C4 R2 R1 V+ SD R5 BIAS Schottky Diode

Contextual Info: DUAL DIODE MODULE Spec.No.SR2-SP-08004 R5 MDM1200E17D FEATURES ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Repetitive Peak Reverse Voltage

MicroMetrics

Abstract: diode 380 transistor
Contextual Info: Scale 100X R5 Chip Styles Chip Styles CS 08 .015 .381 NOM .015 (.381) NOM .030"±.002" [.760±.05] GOLD RIBBON .005 (.13) NOM .030"±.002" . Notes: Top contact & chip size depends on diode parameters. [.760±.05] .015" Max Top & bottom contacts gold. [.380 Max]

251AA

Abstract: 2VQ03CT 2VQ03CTF 2VQ04CT 2VQ04CTF
Contextual Info: SCHOTTKY BARRIER DIODE 2VQ03CT 2VQ04CT 2VQ03CTF 2VQ04CTF 2.2A/30—40V ' 6.4 .252t ' , 5.351211 1.271.05) MAX r5 .0 5U 9 9) FEATURES •TO-251AA Case I •T0-252AA Case, Surface Mount Device I 2.38MAX (.094) 2.3SMAX (.094) A 7 6.22(.245) 5.98(.235) 0.9C035)

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03010 R5 MBN1600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03010 R5 MBN1600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: TOSHIBA TENTATIVE 1SV306 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 3 0 6 VCO FOR UHF BAND RADIO Small Package U ltra Low Series Resistance : r5 = 0 .2 0 0 Typ. MAXIMUM KÄliNüS i i a = 2b°Lj SYMBOL CHARACTERISTIC Reverse Voltage

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03012 R5 MBN800E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03012 R5 MBN800E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

06008R5

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-06008 R5 MBL400E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70oC, N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).

IRHNJ53230

Abstract: IRHNJ54230 IRHNJ57230 IRHNJ58230
Contextual Info: PD - 93753 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57230 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57230 100K Rads (Si) IRHNJ53230 300K Rads (Si) IRHNJ54230 600K Rads (Si) IRHNJ58230 1000K Rads (Si)

Contextual Info: LED-Halterungen Leuchtdiodenhalter fur 3 und 5 mm 0 LED-holder for 3 and 5 mm 0 Montage auf gedruckten Schaltungen Montage on printed circuits Montage auf gedruckten Schaltungen Montage on printed circuits Fur 5 mm-Dioden - 7,6 - r i 7-6 - i ! r5 .0 8 -i 5.08-1

IRHF57234SE

Contextual Info: PD - 93831 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57234SE 250V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHF57234SE 100K Rads (Si) RDS(on) 0.42Ω ID 5.4A TO-39 International Rectifier’s R5TM technology provides

Contextual Info: PD - 93880 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57260SE 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57260SE 100K Rads (Si) RDS(on) ID 0.044Ω 35A* TO-254AA International Rectifier’s R5TM technology provides

Contextual Info: PD - 93752 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57034 60V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57034 100K Rads (Si) IRHNJ53034 300K Rads (Si) RDS(on) 0.030Ω 0.030Ω ID 22A* 22A* IRHNJ54034