R5 SOT363 Search Results

transistor BD 139

Abstract: AP 1100 R1 darlington cascode second stage transistor AT-320 agilent AT32063 AT-32063
Contextual Info: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT32063 consists of two AT-320XX transistors mounted in a

darlington cascode second stage

Abstract: transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR AT-32063 d2030
Contextual Info: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors

transistor c 5936 circuit diagram

Abstract: AT-32063 c 2073 amplifier circuit diagram D2030 18 sot-363 rf power amplifier S2PB
Contextual Info: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Hewlett-Packard AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors mounted in a

Contextual Info: FHR1200 Micro-Power, Ultra Wide Voltage Regulator Features Description • Low Operating Current: 12 A Max. • Option to Direct Drive Feedback Pin on PWM Controllers • Programmable Output: 7.5 V to 100 V • Wide Operating Temperature Range: -55°C to +150°C

Contextual Info: FHR1200 Micro-Power, Ultra Wide Voltage Regulator Features Description • Low Operating Current: 12 A Max. • Option to Direct Drive Feedback Pin on PWM Controllers • Programmable Output: 7.5 V to 100 V • Wide Operating Temperature Range: -55°C to +150°C

Contextual Info: ASL563 High Gain, Low Noise Amplifier Description Features  33 dB Gain at 900 MHz  1.0 dB NF at 900 MHz  Two-stage LNA  Two power supplies in Type 2 ASL563 is a two-stage LNA for GPS, GLONASS, Galileo, Compass, DMB, and satellite receiver low noise blocks. It has a low noise, high gain, and high

"3 watt led"

Abstract: led constant current driver 700mA MBR140SFT1G LRC-LR1206-01-R200-F 10k resistor 1/4 watt 1206 datasheet 47 uf capacitor led driver pwm 350mA 8 SMT DIODE SOD123 CS51411 CS51413
Contextual Info: DN06018/D Design Note – DN06018/D 12V or 24Vin DC, Constant Current LED Driver Device Application Input Voltage Output Power Topology I/O Isolation CS51411 NCV51411 Constant Current LED Driver 12 V or 24 V DC Up to 4 W Buck None Other Specifications Output Voltage

CMKTC825A

Abstract: CMKTC825E
Contextual Info: CMKTC825A CMKTC825E w w w. c e n t r a l s e m i . c o m SURFACE MOUNT TEMPERATURE COMPENSATED SILICON ZENER DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKTC825A and CMKTC825E are 6.2 volt, temperature compensated Zener reference diodes. These devices are ideal for

zener diode mv 13

Abstract: CMKTC825A R5 SOT363 marking 651 sot363 C25E CT25 marking CODE 75C marking code 62 3 pin diode sot363 marking codes 20 diode marking r5
Contextual Info: CMKTC825A CMKTC825E SURFACE MOUNT TEMPERATURE COMPENSATED SILICON ZENER DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKTC825A and CMKTC825E are 6.2 volt, temperature compensated Zener reference diodes. These devices are ideal for

CMKD6001

Abstract: marking code K01
Contextual Info: CMKD6001 SURFACE MOUNT TRIPLE ISOLATED ULTRA LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD6001 type contains three 3 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy

CMKD4448

Contextual Info: CMKD4448 SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD4448 type contains three 3 Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial planar

3904 TRANSISTOR PNP

Abstract: transistor k46 k46 transistor k46 sot363 marking 3906 TRANSISTOR npn K46 Package marking k04 3904 transistor sot363 marking codes 20 small signal transistor marking codes
Contextual Info: CMKT3904 NPN/NPN CMKT3906 PNP/PNP CMKT3946 NPN/PNP SURFACE MOUNT DUAL SMALL SIGNAL SILICON SWITCHING TRANSISTORS SOT-363 CASE FEATURES: • ULTRAmini space saving package • Two NPN 3904 or Two PNP (3906) Transistors in a single package MAXIMUM RATINGS: (TA=25°C)

ensw1

Contextual Info: User's Guide SNVA350B – September 2008 – Revised April 2013 AN-1858 LM26484 Power Management Unit Evaluation Board 1 Introduction The LM26484 evaluation board is a working demonstration of two step-down DC-DC converters and an LDO controller. This user's guide helps you make the best use of the LM26484 with your application. For

ce 2826 ic

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC5001T1 Low Voltage Bias Stabilizer w ith Enable • Maintains Stable Bias Current in N-Type Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component Without Use of Emitter Ballast

MRF8P9040N

Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
Contextual Info: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial

smd mosfet sot-363

Abstract: AM417 esd protect mosfet AN1019 p channel de mosfet NTJD4105C complementary mosfet
Contextual Info: Application description AN1019 Ratiometric reverse polarity protection for AM417 The task on hand The instrumentation amplifier AM417 [1] and an upstream sensing element see Figure 3 are to be protected against reverse polarity using an inexpensive circuit at a ratiometric supply of 5V

3906 PNP TRANSISTOR

Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
Contextual Info: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET

CR6332-2512

Abstract: MA2YD2600L MA2YD2600 GRM31CR61C106KC31L HDR13X2 TFML-110-02-S-D GRM32ER61C476ME15L TFM-110-02-XD-LC CR633 3008 so8
Contextual Info: National Semiconductor Application Note 1736 Clinton Jensen February 4, 2008 Introduction sibility of accidentally destroying high current LEDs. It connects to the LM3433 evaluation board with the supplied 26 pin ribbon cable. The load board has an adjustable voltage

power transistors table

Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
Contextual Info: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,

SMD ZENER DIODE Z1

Abstract: 1N4937 SMD EF16 TRANSFORMER diode D7 SOD-123 BAT54 on semi IC 2 5/dual transistor 6 pin SMD Z2 NCP1075
Contextual Info: DN05038/D Design Note – DN05038/D Non-Isolated, 8 Watt Dual Output, Off-line Power Supply Device Application NCP1075 NST45011 White Goods, Industrial Equipment Input Voltage 180 to 270 Vac Output Power Topology I/O Isolation 8 Watts Nominal Non-Isolated

Contextual Info: PMP5201G; PMP5201Y PNP/PNP matched double transistors Rev. 01 — 14 February 2006 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface Mounted Device SMD plastic packages. The transistors in the SOT363 (SC-88) package are fully isolated internally.

NSR15DW1

Abstract: NSR15DW1T1
Contextual Info: NSR15DW1 Dual RF Schottky Diode These diodes are designed for analog and digital applications, including DC based signal detection and mixing applications. Features: http://onsemi.com • Low Capacitance <1 pF • Low VF (390 mV typical @ 1 mA) • Low VFΔ (1 mV typical @ 1 mA)

JMK316B7226ML-T

Abstract: erb21b5c2e150jdx1l AN1858 ERB21B5C2E8R2CDX1L power supply woodward ensw1 GRM21BR71A106KE51L LM26480 LM26484SQ DAP 002 regulator
Contextual Info: National Semiconductor Application Note 1858 John Woodward November 4, 2009 Application Manual GENERAL DESCRIPTION The LM26484 is a multi-function, configurable Power Management Unit. This device integrates two highly efficient 2.0A step-down DC/DC converters, one LDO Controller, a POR

Contextual Info: PRODUCT DATASHEET AAT2822/23/24/25 SystemPowerTM TFT-LCD DC-DC Converter with WLED Driver and VCOM Buffer General Description Features The AAT2822-AAT2825 family of integrated panel power solutions provides the regulated voltages required by an active-matrix thin-film transistor TFT liquid-crystal display (LCD). The AAT2822 includes a triple-output DC-DC