R5007 Search Results

capacitor 200uF 12V

Abstract: DC-DC converter 5V Single RSG fkc12-24s05 2000uF 120uf 47uf/100v IEC60950-1 200UF
Contextual Info: VER:05 1 / 2 • 12 WATTS OUTPUT POWER • 2:1 WIDE INPUT VOLTAGE RANGE • FIVE-SIDED CONTINUOUS SHIELD • HIGH EFFICIENCY UP TO 88% • STANDARD 24 PIN DIP PACKAGE • I/O ISOLATION 1600 VDC UL E193009 TUV R5007936 CB JPTUV-010342 CE MARK The FKC12 series offer 12 watts of output power from a package in an IC compatible 24pin

dpdt 12v relay schrack

Abstract: schrack PCB dpdt 12v RELAY PCB DPDT 12V 8 pin 5 pin relay 12vdc 250VAC 4PDT 12V resistor-capacitor catalog RELAY PCB DPDT 12V 6 pin DPDT relay 12v Schrack 14 pin 500VA
Contextual Info: SCHRACK General Purpose Relays PTH series 6 to 12 Amp Miniature Relay 2 or 4 Pole, PCB or Plug-in File E58304 File R50072981 File 05001013007 Users should thoroughly review the technical data before selecting a product part number. It is recommended that users also seek out the

Contextual Info: R5007FNX Nch 500V 7A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 1.3Ω ID ±7A PD 40W TO-220FM l Inner circuit l Features 1) Fast reverse recovery time (trr).

Contextual Info: • 12 WATTS OUTPUT POWER • 2:1 WIDE INPUT VOLTAGE RANGE • FIVE-SIDED CONTINUOUS SHIELD • HIGH EFFICIENCY UP TO 88% • STANDARD 24 PIN DIP PACKAGE • I/O ISOLATION 1600 VDC UL E193009 TUV R5007936 CB JPTUV-010342 CE MARK T E C H N I C A L S P E C I F I C AT I O N

R5007ANX

Abstract: 0943 00E-6
Contextual Info: SPICE PARAMETER R5007ANX by ROHM TR Div. * R5007ANX NMOSFET model * Date: 2007/07/26 *D G S .SUBCKT R5007ANX 1 2 3 M1 11 22 3 3 MOS_N C1 1 3 10p D1 3 1 DDS R1 1 11 RTH .762 D2 11 21 DDG D3 22 21 DDG R2 2 22 27 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

Contextual Info: 10V Drive Nch MOSFET R5007ANJ zStructure Silicon N-channel MOSFET zDimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: 10V Drive Nch MOSFET R5007ANX Dimensions Unit : mm Structure Silicon N-channel MOSFET TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 30V.

R5007ANX

Contextual Info: R5007ANX Transistors 10V Drive Nch MOSFET R5007ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

Contextual Info: SCHRACK General Purpose Relays PTH series 6 to 12 Amp Miniature Relay 2 or 4 Pole, PCB or Plug-in File E58304 File R50072981 File 05001013007 . Y L F N O O E E C S C E N . I N A D R E U E E R N C S I E N T T F U N E C R CO DU NO R S O AN I O D PR N F E E S

Contextual Info: R5007ANX Nch 500V 7A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 1.05Ω ID ±7A PD 40W TO-220FM l Inner circuit l Features 1) Low on-resistance.

R5007ANJ

Contextual Info: 10V Drive Nch MOSFET R5007ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V.

R5007ANX

Contextual Info: R5007ANX Transistors 10V Drive Nch MOSFET R5007ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

Contextual Info: 10V Drive Nch MOSFET R5007ANJ Dimensions Unit : mm Structure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V.

R5007ANX

Contextual Info: 10V Drive Nch MOSFET R5007ANX Dimensions Unit : mm Structure Silicon N-channel MOSFET TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: 10V Drive Nch MOSFET R5007ANX Structure Silicon N-channel MOSFET Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R5007ANJ Transistors 10V Drive Nch MOSFET R5007ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

Contextual Info: • 8 WATTS OUTPUT POWER • 4:1 ULTRA WIDE INPUT VOLTAGE RANGE • FIVE-SIDED CONTINUOUS SHIELD • HIGH EFFICIENCY UP TO 88% • STANDARD 24 PIN DIP PACKAGE • FIXED SWITCHING FREQUENCY • RoHS DIRECTIVE COMPLIANT UL E193009 TUV R5007936 CB JPTUV-010342-M1

R5007ANJ

Abstract: 10V Drive Nch MOSFET
Contextual Info: R5007ANJ Transistors 10V Drive Nch MOSFET R5007ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

R5007ANX

Contextual Info: R5007ANX Transistors 10V Drive Nch MOSFET R5007ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

0943

Abstract: R5007ANJ 00E-6
Contextual Info: SPICE PARAMETER R5007ANJ by ROHM TR Div. * R5007ANJ NMOSFET model * Date: 2007/07/26 *D G S .SUBCKT R5007ANJ 1 2 3 M1 11 22 3 3 MOS_N C1 1 3 10p D1 3 1 DDS R1 1 11 RTH .762 D2 11 21 DDG D3 22 21 DDG R2 2 22 27 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

RSD130P10

Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Contextual Info: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents

bd622d

Abstract: BD623d RPI-441C1E BD6221F BA6287 BD6387 BD6222 BD6222HFP BD6230F bd62
Contextual Info: Power Products Energy-saving PWM drivers H-bridge Drivers for DC Brush Motors ÎPWM BD621 □ / BD622D / BD623D series ROHM's easy-to-use high efficiency H-bridge drivers for DC brush motors enable speed control while driving by performing switching lïïik v

Contextual Info: Power Relays G7Z CSM_G7Z_DS_E_6_1 Multi-pole Power Relay for Contactor Current Range Capable of Carrying and Switching 40 A at 440 VAC • One pole, 40 A can be carried and switched. • The maximum load capacity of 160 A when using 4-pole parallel connections.

r9824

Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16