R5009 Search Results

R5009FNX

Contextual Info: Data Sheet 10V Drive Nch MOSFET R5009FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1)Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage

Contextual Info: R5009ANX R5009ANX Datasheet Nch 500V 9A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.72W ID 9A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R5009ANX Nch 500V 9A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.72W ID 9A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: 10V Drive Nch MOSFET R5009ANJ Dimensions Unit : mm Structure Silicon N-channel MOSFET LPTS 10.1 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 2.54 (1) Base (Gate) (3) (2) Collector (Drain) (3) Emitter (Source) Applications Switching Each lead has same dimensions

M1407

Abstract: 4436 in 4436 00E-6 R5009ANX
Contextual Info: SPICE PARAMETER R5009ANX by ROHM TR Div. * R5009ANX NMOSFET model * Date: 2008/01/25 *D G S .SUBCKT R5009ANX 1 2 3 M1 11 22 3 3 MOS_N C1 1 3 15p D1 3 1 DDS R1 1 11 RTH .486 D2 11 21 DDG D3 22 21 DDG R2 2 22 30 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

Contextual Info: 10V Drive Nch MOSFET R5009ANJ zStructure Silicon N-channel MOSFET zDimensions Unit : mm LPTS 10.1 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 2.54 (1) Base (Gate) (3) (2) Collector (Drain) (3) Emitter (Source) zApplications Switching Each lead has same dimensions

Contextual Info: R5009ANX Datasheet Nch 500V 9A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.72W ID 9A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

R5009ANX

Contextual Info: 10V Drive Nch MOSFET R5009ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 0.8 (1)Base 2.54 (2)Collector 2.54 0.75 2.6 (1) (2) (3) (3)Emitter zApplications Switching zInner circuit ∗1 zPackaging specifications Package

Contextual Info: R5009FNJ Nch 500V 9A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 0.84Ω ID ±9A PD 50W LPT(S) l Inner circuit l Features 1) Fast reverse recovery time (trr).

4436

Abstract: in 4436 00E-6 R5009ANJ M1407
Contextual Info: SPICE PARAMETER R5009ANJ by ROHM TR Div. * R5009ANJ NMOSFET model * Date: 2008/01/25 *D G S .SUBCKT R5009ANJ 1 2 3 M1 11 22 3 3 MOS_N C1 1 3 15p D1 3 1 DDS R1 1 11 RTH .486 D2 11 21 DDG D3 22 21 DDG R2 2 22 30 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

R5009ANX

Contextual Info: R5009ANX Nch 500V 9A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.72W ID 9A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

R5009ANJ

Contextual Info: 10V Drive Nch MOSFET R5009ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 2.54 (1) Base (Gate) (3) (2) Collector (Drain) (3) Emitter (Source) zApplications Switching Each lead has same dimensions

Contextual Info: R5009FNX Datasheet Nch 500V 9A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.84W ID 9A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R5009ANX Transistors 10V Drive Nch MOSFET R5009ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

R5009ANX

Contextual Info: R5009ANX Transistors 10V Drive Nch MOSFET R5009ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

Contextual Info: R5009FNX Nch 500V 9A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.84W ID 9A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

AZ756

Contextual Info: AZ756 20 AMP MINIATURE POWER RELAY FEATURES • • • • • Dielectric strength 5000 Vrms Low cost 20 Amp switching — single pole contacts Isolation spacing greater than 8mm UL Class B insulation system standard Class F available • UL, CUR file E43203, TÜV R50099406

R5009ANJ

Contextual Info: R5009ANJ Transistors 10V Drive Nch MOSFET R5009ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

Contextual Info: R5009FNX Nch 500V 9A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.84W ID 9A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: SMD0805 HF Series Surface Mount PTC Devices SMD0805 HF Series Surface Mount PTC Devices Description The 0805 series provides miniature surface mount resettable overcurrent protection with holding current from 0.1A to 1.1A. This series is suitable for ultra portable

SMD1812P020

Contextual Info: SMD1812 HF Series Surface Mount PTC Devices SMD1812 HF Series Surface Mount PTC Devices Description The 1812 series provides surface mount resettable overcurrent protection with holding current from 0.1A to 3.0A. This series offers complete portfolio in terms of holding

RSD130P10

Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Contextual Info: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents

bd622d

Abstract: BD623d RPI-441C1E BD6221F BA6287 BD6387 BD6222 BD6222HFP BD6230F bd62
Contextual Info: Power Products Energy-saving PWM drivers H-bridge Drivers for DC Brush Motors ÎPWM BD621 □ / BD622D / BD623D series ROHM's easy-to-use high efficiency H-bridge drivers for DC brush motors enable speed control while driving by performing switching lïïik v

TAIMAG HD 081 A

Abstract: ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627
Contextual Info: 5 4 3 2 1 G1S: MEROM/965-PM/ICH8-M/NB8P-GS BLOCK DIAGRAM CLOCK GEN CK505 ICS9LPR363CGLF-T D Merom CPU FAN + THERMAL SENSOR 478B uFCPGA VRAM CH.C GDDR3 *2 LVDS PAGE 45 PAGE 46 PAGE 50 FSB 800 MHz 136 FBGA PAGE 72 NVIDIA NB8P-GS CRT PAGE 3-6 VRAM CH.A GDDR3 *2