R5011 Search Results

R5011ANX

Contextual Info: R5011ANX Datasheet Nch 500V 11A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.5W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

R5011ANX

Contextual Info: R5011ANX R5011ANX Transistors 10V Drive Nch MOSFET R5011ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS)

R5011ANX

Contextual Info: R5011ANX Transistors 10V Drive Nch MOSFET R5011ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be r30V.

Contextual Info: R5011FNX Nch 500V 11A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.52W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.

0603L100SLYR

Abstract: 0603L150SLYR
Contextual Info: POLY-FUSE Resettable PTCs Surface Mount > LoRho Series LoRho Surface Mount Series Agency Approvals AGENCY AGENCY FILE NUMBER E10480 R50119118 Littelfuse LoRho Surface Mount PPTC Polymer Positive Temperature Coefficient devices provide overcurrent protection for applications where ultra low internal

504c diode

Abstract: R5011FNX
Contextual Info: 10V Drive Nch MOSFET R5011FNX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Fast reverse recovery time. 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V.

C458C

Contextual Info: 10V Drive Nch MOSFET R5011ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 4.5 1.24 2.54 0.4 0.78 2.7 5.08 (1) Gate (2) Drain (3) Source 1.2 3.0 1.0 13.1 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: R5011FNJ Nch 500V 11A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 0.52Ω ID ±11A PD 50W LPT(S) l Inner circuit l Features 1) Fast reverse recovery time (trr).

Contextual Info: R5011FNX R5011FNX Datasheet Nch 500V 11A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.52W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Fast reverse recovery time (trr). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.

0603L100SLYR

Abstract: 0603L150SLYR
Contextual Info: POLY-FUSE Resettable PTCs Surface Mount > LoRho Series LoRho Surface Mount Series Description Agency Approvals AGENCY AGENCY FILE NUMBER E183209 R50119118  ittelfuse LoRho Surface Mount PPTC Polymer Positive L Temperature Coefficient devices provide overcurrent

3750V

Abstract: ELECTRONIC BALLAST DIAGRAM 240VAC 10A240VAC TV-3120VAC
Contextual Info: RG SERIES INDUSTRIAL RELAYS DIMENSIONS Unit: mm UL & CUL File #E256619 TUV File # R50118863 FEATURES • Miniature relay with high switching capability: 30A. • Contact form: Form A. Form B or 1 Form C. • Special type of 4000VAC dielectric strenghth and 6000V surge voltage

Contextual Info: R5011FNX 10V Drive Nch MOSFET - R5011FNX MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market. Part number Status Package

C458C

Abstract: R5011ANX
Contextual Info: R5011ANX Transistors 10V Drive Nch MOSFET R5011ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: RZ SERIES INDUSTRIAL RELAYS UL & CUL File #E256619 TUV Certified File #R501167731 DIMENSIONS Unit: mm 18.2 FEATURES 15 1. Size 10.2 x 18.2 x 15mm 2. Subminiature type. ORDERING INFORMATION 4.0 RZ 1A - 12 H S 1 (2) (3) (4) (5) 0.3 0.45 0.3 12.7 (1) Basic Designation

Contextual Info: 10V Drive Nch MOSFET R5011ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 4.5 1.24 2.54 0.4 0.78 2.7 5.08 (1) Gate (2) Drain (3) Source 1.2 3.0 1.0 13.1 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

R5011ANX

Contextual Info: R5011ANX Transistors 10V Drive Nch MOSFET R5011ANX Dimensions Unit : mm Structure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ‒30V.

RELAYS rz

Abstract: 600va ups 600VA
Contextual Info: RZ SERIES INDUSTRIAL RELAYS UL & CUL File #E256619 TUV Certified File #R501167731 DIMENSIONS Unit: mm 18.2 FEATURES 15 1. Size 10.2 x 18.2 x 15mm 2. Subminiature type. ORDERING INFORMATION 4.0 RZ 1A - 12 H S 1 (2) (3) (4) (5) 0.3 0.45 0.3 12.7 (1) Basic Designation

48V 30A SPDT RELAY

Abstract: 48 V coil 30A SPDT RELAY RG relay relay 48, 1c E2233
Contextual Info: RG SERIES INDUSTRIAL RELAYS UL & CUL File #E223388, File#E256619 TUV certified File #R50118863 DIMENSIONS Unit: mm 1. 2. 3. 4. 5. 26.5 FEATURES 30.5 MAX 3.3 ± 0.5 The RG Relay series offers 30A switching capacity. Single contact RG series relay offers 30A switching capacity.

Contextual Info: RZ SERIES INDUSTRIAL RELAYS UL & CUL File #E223388 TUV Certified File #R50118875 with exceptions as noted DIMENSIONS Unit: mm 18.2 FEATURES 15 1. Size 10.2 x 18.2 x 15mm 2. Subminiature type. ORDERING INFORMATION 4.0 RZ 1A - 12 H S (1) (2) (3) (4) (5) 0.3

R5011ANX

Contextual Info: R5011ANX Transistors 10V Drive Nch MOSFET R5011ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be r30V.

Contextual Info: 10V Drive Nch MOSFET R5011ANJ zStructure Silicon N-channel MOSFET zDimensions Unit : mm LPTS 10.1 4.5 1.24 2.54 0.4 0.78 2.7 5.08 (1) Gate (2) Drain (3) Source 1.2 3.0 1.0 13.1 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: RG SERIES INDUSTRIAL RELAYS UL & CUL File #E223388, File#E256619 TUV certified File #R50118863 DIMENSIONS Unit: mm 1. 2. 3. 4. 5. 26.5 FEATURES 30.5 MAX 3.3 ± 0.5 The RG Relay series offers 30A switching capacity. Single contact RG series relay offers 30A switching capacity.

Contextual Info: R5011FNX Nch 500V 11A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.52W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Fast reverse recovery time (trr). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.

Contextual Info: R5011FNX Datasheet Nch 500V 11A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.52W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Fast reverse recovery time (trr). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.