R5016 Search Results

Contextual Info: R5016ANX Nch 500V 16A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 0.27Ω ID ±16A PD 50W TO-220FM l Inner circuit l Features 1) Low on-resistance.

200D

Abstract: AZ2704 E44211 100G11
Contextual Info: AZ2704 30 AMP POWER RELAY FEATURES • • • • • • Low cost 30 Amp switching Class B insulation system standard, Class F available PC mount 4 kV dielectric Standard 2.4 mm and wide contact gap (3.0 mm) available • UL, CUR file E44211 • TÜV R50164753

Contextual Info: R5016ANX Transistors 10V Drive Nch MOSFET R5016ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

Contextual Info: R5016FNX Data Sheet 10V Drive Nch MOSFET R5016FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 1.2 1.3 14.0 2.5 8.0 15.0 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 12.0 2.8 (1) Gate

Contextual Info: 10V Drive Nch MOSFET R5016ANJ Dimensions Unit : mm Structure Silicon N-channel MOSFET LPTS 10.1 0.4 0.78 2.7 5.08 (1) Base (Gate) (1) (2) 1.2 3.0 1.0 1.24 2.54 (3) (2) Collector (Drain) (3) Emitter (Source) Applications Switching Each lead has same dimensions

R5016ANX

Contextual Info: R5016ANX Transistors 10V Drive Nch MOSFET R5016ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

R5016ANX

Contextual Info: R5016ANX Transistors 10V Drive Nch MOSFET R5016ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

Contextual Info: R5016ANJ Transistors 10V Drive Nch MOSFET R5016ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

Contextual Info: Data Sheet 10V Drive Nch MOSFET R5016FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 1.2 1.3 14.0 2.5 8.0 15.0 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 12.0 2.8 0.8 (1) Gate (2) Drain

Contextual Info: AZ2704 30 AMP POWER RELAY FEATURES • • • • • • Low cost 30 Amp switching Class B insulation system standard, Class F available PC mount 4 kV dielectric Standard 2.4 mm and wide contact gap (3.0 mm) available • UL, CUR file E44211 • TÜV R50164753

SSI-LXH8080SID-150

Contextual Info: LUUi dome lens panel indicators SSI-R5016XC-L150 Series T-5mm Chrome Indicator, Spray Waterproof, Flat Lens, 6” Leads PANEL CUTOUT: 00.323" Dice Material Lumex Part Number Emitted Color Peak nm LED Lens FEATURES / OPTIONS APPLICATIONS / USES • State-of-the-Art, High

Contextual Info: R5016ANX Transistors 10V Drive Nch MOSFET R5016ANX Dimensions Unit : mm Structure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

Contextual Info: R5016FNJ Nch 500V 16A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 0.325Ω ID ±16A PD 50W LPT(S) l Inner circuit l Features 1) Fast reverse recovery time (trr).

Contextual Info: R5016ANJ Transistors 10V Drive Nch MOSFET R5016ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

Contextual Info: AZ943 15 AMP MINIATURE PC BOARD RELAY FEATURES • • • • • • • High performance Low seated height Flux tight and sealed versions available Class B insulation 130°C standard Class F insulation (155°C) available UL, CUR file E43203 TÜV file R50161256

Contextual Info: AZ2705 30 AMP POWER RELAY FEATURES • Low cost • 30 Amp switching • Class B insulation system standard, Class F available • Flange mount • 4 kV dielectric • Standard 2.4 mm and wide contact gap (3.0 mm) available • UL, CUR file E44211 • TÜV R50164753

Contextual Info: AZ2705 30 AMP POWER RELAY FEATURES • Low cost • 30 Amp switching • Class B insulation system standard, Class F available • Flange mount • 4 kV dielectric • Standard 2.4 mm and wide contact gap (3.0 mm) available • UL, CUR file E44211 • TÜV R50164753

Contextual Info: 10V Drive Nch MOSFET R5016ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 0.4 0.78 2.7 5.08 (1) Base (Gate) (1) (2) 1.2 3.0 1.0 1.24 2.54 (3) (2) Collector (Drain) (3) Emitter (Source) zApplications Switching Each lead has same dimensions

Contextual Info: Data Sheet 10V Drive Nch MOSFET R5016FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 1.2 1.3 14.0 2.5 8.0 15.0 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 12.0 2.8 (1) Gate (2) Drain

AZ943-1CH-12D

Abstract: az943 relay AZ943 AZ943-1CH-18D
Contextual Info: AZ943 15 AMP MINIATURE PC BOARD RELAY FEATURES • • • • • • • High performance Low seated height Flux tight and sealed versions available Class B insulation 130°C standard Class F insulation (155°C) available UL, CUR file E43203 TÜV file R50161256

Contextual Info: AZ943 15 AMP MINIATURE PC BOARD RELAY FEATURES • • • • • • • High performance Low seated height Flux tight and sealed versions available Class B insulation 130°C standard Class F insulation (155°C) available UL, CUR file E43203 TÜV file R50161256

00E-6

Abstract: BV500
Contextual Info: SPICE PARAMETER R5016ANJ by ROHM TR Div. * R5016ANJ NMOSFET model * Date: 2008/01/28 *D G S .SUBCKT R5016ANJ 1 2 3 M1 11 22 3 3 MOS_N D1 3 1 DDS R1 1 11 RTH .186 D2 11 21 DDG D3 22 21 DDG R2 2 22 30 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

R5016ANX

Abstract: 00E-6
Contextual Info: SPICE PARAMETER R5016ANX by ROHM TR Div. * R5016ANX NMOSFET model * Date: 2008/01/28 *D G S .SUBCKT R5016ANX 1 2 3 M1 11 22 3 3 MOS_N D1 3 1 DDS R1 1 11 RTH .186 D2 11 21 DDG D3 22 21 DDG R2 2 22 30 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

4xm4

Abstract: 200D AZ2705 E44211
Contextual Info: AZ2705 30 AMP POWER RELAY FEATURES • Low cost • 30 Amp switching • Class B insulation system standard, Class F available • Flange mount • 4 kV dielectric • Standard 2.4 mm and wide contact gap (3.0 mm) available • UL, CUR file E44211 • TÜV R50164753