R5021 Search Results

C459C

Abstract: RL119
Contextual Info: R5021ANX Transistors 10V Drive Nch MOSFET R5021ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: R5021ANJ Nch 500V 21A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

R5021ANJ

Contextual Info: R5021ANJ R5021ANJ Datasheet Nch 500V 21A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R5021318FSWA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current175 V(RRM)(V) Rep.Pk.Rev. Voltage1.3k t(rr) Max.(s) Rev.Rec. Time1.5u @I(F) (A) (Test Condition)314 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.6

r5021anx

Contextual Info: R5021ANX Transistors 10V Drive Nch MOSFET R5021ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be r30V.

Contextual Info: Data Sheet 10V Drive Nch MOSFET R5021ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) garanteed to be ±30V . 4.5 3.0 1.0 1.24

Contextual Info: R5021ANX Datasheet Nch 500V 21A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.21W ID 21A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R5021ANX Nch 500V 21A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.21W ID 21A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R5021ANJ Datasheet Nch 500V 21A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R5021ANJ Nch 500V 21A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

R5021ANX

Contextual Info: R5021ANX R5021ANX Datasheet Nch 500V 21A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.21W ID 21A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R5021ANX Nch 500V 21A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.21W ID 21A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

RSD130P10

Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Contextual Info: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents

R1019

Contextual Info: Main Catalog Pilot Devices the complete offering News in this Catalog • Joysticks • Compact Mushrooms • Compact Illuminated Pushbuttons • Additional Legend Plate Holders • 50 Ω Potentiometer • Mounting Tool for Power Tool Contents Introduction. 2

IRF5505

Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
Contextual Info: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT

V3V REV-1.1

Abstract: asus C5027 r d5703 X7RA 47N217 C5706 c6005 3VA2 ICS954310BG
Contextual Info: A B C D E A8J/F SCHEMATIC R11 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 YONAH CPU 1 YONAH CPU (2) CPU CAP/THERMAL SENSOR CLOCK GEN. Calistoga-CPU

NH82801GB

Abstract: NH82801GBM Intel NH82801GBM SL2501 sl8yb QG82945GM SL8Z2 LCD Inverter board s6f JP5000 M38857HP asus
Contextual Info: 5 4 3 2 1 PROJECT S6F D D Revision History R1.0 SR 2005/07/01 R1.1 ER 2005/11/25 R2.0 PR 2005/01/18 SMB Signals C Host Chipset Name Devices SMBCK,SMBDA Address ICH7-M ADT7460 Thermal ICS954213(Clock Genertor) DDR2 SO-DIMM C 0001 000X b 0101 110X b D2h A0h

APPLE A6 CHIP

Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
Contextual Info: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6

tps51125

Abstract: alc889 c2233 fds8884 bq24721 BQ24721C Inventec IT8512E tps51125 kbc AR8121
Contextual Info: TETON2 DDRIII-Pre MV BUILD 2008.06.18 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : TETON2 SIZE CODE A3 CS SHEET DOC. NUMBER REV 1310A22077-0-MTRA02 1 OF 53

12010832

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC D IVISIO N AND IS NO TO BE DUPLICATED OR REPRODUCED WITH OUT AUTHORITY OF PACKARD ELECTRIC D IVISIO N . DATE SYM 09N090 Al AUTHORITY DR REVISION RECORD CK REDRAWN WITH NO PHYSICAL CHANGE ADDED INDEX CODE AND NOTE 5 AND

d5023

Abstract: C5027 R d3000 mosfet C5027 r transistor mosfet c5027 equivalent transistor D5023 C6017 Transformer ei33 equivalent of transistor c5027 NEC2501
Contextual Info: Design of an ACIM Vector Control Drive using the 56F8013 Device Designer Reference Manual 56800E 16-bit Digital Signal Controllers DRM075 Rev 1 11/2005 freescale.com Design of an ACIM Vector Control Drive using the 56F8013 Device Designer Reference Manual

equivalent of transistor c5027

Abstract: equivalent transistor D5023 D5023 C5027 d3000 mosfet C5027 r r2003 TRANSISTOR IN4007 diode documentation. free equivalent of transistor c6017 d3002 transistor
Contextual Info: PMSM and BLDC Sensorless Motor Control using the 56F8013 Device Designer Reference Manual 56800E 16-bit Digital Signal Controllers DRM077 Rev 0 11/2005 freescale.com PMSM and BLDC Demonstration using the 56F8013 Device Designer Reference Manual To provide the most up-to-date information, the revision of our documents on the World Wide Web will be

G5CA

Abstract: Omron micro ohmmeter diagram G5CA-1A-E
Contextual Info: G5CA PCB Power Relay Flat Relays that Switch 10A/15A Loads Power • Ideal for switching power in household appliances or for outputs from industrial devices. • Subminiature dimensions: 16 x 22 × 11 mm L × W × H . • High-sensitivity models available with low power

RSD130P10

Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200
Contextual Info: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.