Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD SFR1020C DIODE U LT RA-FAST RECOV ERY RECT I FI ER DI ODES ̈ DESCRI PT I ON UTC SFR1020C is dual center tap rectifier suited for high frequency Switching Mode PowerSupplies applications. ̈ 1 FEAT U RES TO-220 * High Surge Current Capability
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SFR1020C
SFR1020C
O-220
SFR1020CL-TA3-T
SFR1020CG-TA3-T
QW-R601-004
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F30JC
Abstract: S60HC1R5 s40H
Text: S chottky B arrier Diodes High frequency rectifying E-pack Lead type E-pack (SM D ) STO-220 (SM D ) Absolute Maximum Ratings Type No. V rm lo [V ] Electrical Characteristics Vf Ir Conditions Tc Ifsm Tstg Tj (max) Conditions [A] rc ] [A] ra ra [V ] [A] [mA]
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STO-220
S40HC1R5
S60HC1R5
S40HC3
FTO-220
STO-220
FTO-220
F30JC
s40H
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E-PACK
Abstract: smd 2f 1fp3
Text: S chottky Barrier Diodes High fre q u e n c y re c tify in g IT0-220 1F Single Diodes TO-220 Absolute Maximum Ratings Type No. V rm lo [V ] [A] D1NS4 40 6 ☆ M 1FP3 30 1.29 ☆ M 1 FS4 40 1.33 * 60 1.2 6 40 6 D1FP3 60 D1FS4A D2S4M 6M 30 40 ra 59* 60 D 1FS4
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IT0-220
AX057
AX078
02FS4
ITO-220
O-220
FTO-220
DE10P3
E-PACK
smd 2f
1fp3
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esm diodes
Abstract: ESM 200 ESM 980-400 ESM 990-400 diodes byt DO-220 DO-220AB diodes byt 400 08400 Diodes de redressement
Text: new fast recovery rectifier diodes< 100 A nouvelles diodes de redressement ra p id e < 100 A Types VRRM V (A) 8 A / Tcase = 120°C Case trr (ns) Tj = 150°C BY 233-200 BY 233-400 BY 233-600 200 400 600 8 150 DO 220 AB A 8 A / Tcase = 100° C Tj = 150°C
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-28UNF
esm diodes
ESM 200
ESM 980-400
ESM 990-400
diodes byt
DO-220
DO-220AB
diodes byt 400
08400
Diodes de redressement
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TH653
Abstract: No abstract text available
Text: Darlington Transistors Darlington Pow er T ra n s is to rs T0-220 bipolar transistors Type No. Electrical Characteristics Absolute Maximum Ratings Vcbo E IA J VCEO V ebo [V ] 2SD1022 100 100 1023 200 200 1024 100 100 1025 200 200 1026 100 100 200 200 500 400
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T0-220
2SD1022
2SB1282
TH653
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f3l60u
Abstract: SF3L60U
Text: Super Fast Recovery Diode Single Diode OUTLINE Package I FTO-220 SF3L60U U n it : m m W e ig h t 1.9« T y p 600V 3A 4.5 Feature •fê S iü Œ 2kVßfiE • • • • • • 7 2 5 1 -r • Switching Regulator • PFC(Power Factor Correction) • ra M ± FRD
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SF3L60U
FTO-220
F3L60U
J533-1
CJ533-1
f3l60u
SF3L60U
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Untitled
Abstract: No abstract text available
Text: n - n z ÿ ^ t - K Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D8LC40 Case : HQ-220 400V 8A •fiy -rx •trr50n s •7 J Æ -J U K •S R fflüS 0 y u - 7 U - r iiy *m m . OA, •a«, «g. • Æ tè ü a ra .r n fa RATINGS •¡Ê ë & ll^ ü Ë fë
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D8LC40
HQ-220
trr50n
50HzjESi
0003Hb3
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IXGN40N60
Abstract: IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1
Text: Discrete IGBT with FAST Diodes WifaH High Speed Series VcES V *C<25 A VCE SAT) max V t* typ ns TO-220 (P) JP TO-263 (A) PLUS247 (X) TO-247 (H) ► Ne w TO-268 AA T0 -2 04 (T) (M) ♦ ra ^ ISOPLUS220 ISOPLUS247™(R) SOT-2^ TO-264 (K) PLUS264™ (B) LOW SATU RATION VOLTAGE TYPES
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ISOPLUS247TM
O-220
PLUS247TM
O-263
O-268
O-247
ISOPLUS220
O-264
PLUS264TM
IXGA12N100U1*
IXGN40N60
IXGH24N60CD1
IXGR39N60BD1
ixgr32n60cd1
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bts132
Abstract: No abstract text available
Text: SIEMENS TEMPFET BTS132 VDS = 60 V lD = 24 A ^DS on = 0.065 Q • • • • • N channel E nhancem ent mode Logic level Tem perature sen sor with th yristo r ch a ra cte ristic Package TO -220 A B ') O bserve circ u it design hints (see chapter Technical Inform ation)!
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BTS132
bts132
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BTS 110
Abstract: No abstract text available
Text: Sf E M E U S TEMPFET BTS110 VDS = 100 V lD = 10 A ^DS on = 0-2 O • • • • N channel Enhancem ent mode Tem perature sen sor with th yristo r ch a ra cte ristic Package TO -220 A B 1) O bserve circ u it design hints (see chapter Technical Inform ation)!
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BTS110
7078-A
008-A
BTS 110
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Untitled
Abstract: No abstract text available
Text: S IE M tfS IS TEMPFET VDS lD ^ D S o n • • • • • BTS131 = 50 V = 25 A = 0.06 O N channel E nhancem ent mode Logic level Tem perature sensor with th yristo r ch a ra cte ristic Package TO -220 A B 1) O bserve circ u it design hints (see cha pter Technical Inform ation)!
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BTS131
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0496B
Abstract: No abstract text available
Text: SEMIKRON V r sm I f r m s m a x im u m v a lu e s fo r c o n tin u o u s o p e ra tio n V r rm 450 A SEMIPACK 2 Fast Diode1* Modules Ifa v (s in . 180 ; T case = 8 5 °C ; 5 0 Hz) V 220 A SKKE 301 F 1000 SKKE 301 F 10 1100 SKKE 301 F 11 1200 SKKE 301 F 12
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30zed,
0496B
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0496B
Abstract: Diode semikron skke 120
Text: SEMIKRON V r sm I f r m s m a x im u m v a lu e s fo r c o n tin u o u s o p e ra tio n V r rm 220 A SEMIPACK 2 Fast Diode Modules I fav (s in . 180 ; Tease = 6 5 °C ; 5 0 Hz) V 140 A SKKE 120 F 1500 S K K E 120 F 15 1600 S K K E 120 F 16 Sym bol C ond itio ns
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3053 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION T his pro d u ct is N -C han ne l M O S Field E ffe ct T ra n sisto r PA R T N U M B E R PACKAGE 2S K 305 3 Isolated T O -220 d e sig n e d for high cu rre n t sw itch ing ap plicatio ns.
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2SK3053
D12912EJ1V0DS00
P-45F)
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F20F6N
Abstract: 2SK2287
Text: 6 0 V v'J-X A^-MOSFET 60 V SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S Case I FTO-220 2SK2287 F20F6N 60 v 20 a ■ R A T IN G S ■ ÎÊ ÎÎÎi^ S Ë fê A b s o lu te m M a x im u m Item -V ^ C h annel T e m p e ra tu re * v - x t l D r a in -S o u rc e V o lta g e
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2SK2287
F20F6N)
FTO-220
s1/100
10/is,
F20F6N
2SK2287
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N0165
Abstract: No abstract text available
Text: SEMIKRON V r sm V r rm If r m s m a x im u m v a lu e fo r c o n tin u o u s o p e ra tio n 350 A If a v V V 400 220 A S K N D 165 S K N D 1 6 5 /0 4 600 600 S K N D 1 6 5 /0 6 800 800 S K N D 1 6 5 /0 8 1200 1200 S K N D 1 6 5 /1 2 C o n d itio n s S K N D 165
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N016514
N0165
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LL55C
Abstract: No abstract text available
Text: LL55C Series Voltage Range 2.4 to 75 Volts Zener diode Glass Case Mini Melf/SOD 80 Features JEDEC DO -213A A 1.Small surface mounting type 2.High reliability Applications Cathode band Voltage stabilization Ö - in+ Construction is 1 Silicon epitaxial planar
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LL55C
JEDECDO-213AA
300K/W
50mmerature
500mW
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tunnel diodes
Abstract: tunnel diode e16 diode tunnel diode DO-7 2.TU
Text: TU 205/5, 205/10, 210/5, 210/10, 220/5, 220/10 P-Germanium tunnel diodes Tunnel diodes of the series TU 205, T U 2 1 0 and TU 220 are particularly designed for use as ultra-high-speed switches. Built into unvarnished glass cases 51 A 2 DIN 41880 D O -7 the diodes are available in 2 groups of maximum current tolerance
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TU210
Q62701
tunnel diodes
tunnel diode
e16 diode
tunnel diode DO-7
2.TU
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Untitled
Abstract: No abstract text available
Text: Tem ic TZMC. TELEFU N K EN Semiconductors Silicon Epitaxial Planar Z Diodes Features • Very sharp reverse characteristic • L ow reverse current level • A vailable with tighter tolerances • Very high stability • L ow noise Applications Voltage stabilization
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300K/W
50mmx50mmxl
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Untitled
Abstract: No abstract text available
Text: vS ü y TZMB. ▼ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • V e ry s h a rp re v e rs e c h a ra c te ris tic • L o w re ve rs e c u rre n t level • A v a ila b le w ith tig h te r to le ra n c e s • V e ry high s ta b ility
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D-74025
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: BZX55C2V4 FORWARD INTERNATIONAL ELECTRONICS LID. SEMICONDUCTOR TECHNICAL DATA THRU BZX55C39 TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES FE A TU R E S ' Vo l t age R a n g e : 2 . 4 V t o 3 9 V * Do u b l e sl ug t y p e c o n s t r u c t i o n DO-34/DO-35
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BZX55C2V4
BZX55C39
DO-34/DO-35
BZX55C30
BZX55C33
BZX55C36
BZX55C16
BZX55C18
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DIODE Z1235
Abstract: Z1235 DIODE BZX 24 DIODE BZX 35 DIODE BZX 62 15 BZX DIODE bzx 18 bzx c12 DIODE Z1235 silicon type DIODE BZX
Text: BZX97 Silicon Z diode for 500 m W BZX 97 is an epitaxial silicon planar Z diode in a glass case 56 A 2 DIN 41883 D O -35 . It is used for the stabilization and limitation of voltages as well as for the generation of reference voltages at low power requirements.
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BZX97
DO-35)
Q62702
Q62702
10mA-
102mA
DIODE Z1235
Z1235
DIODE BZX 24
DIODE BZX 35
DIODE BZX 62
15 BZX
DIODE bzx 18
bzx c12
DIODE Z1235 silicon type
DIODE BZX
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DIODE BZX 62
Abstract: DIODE BZX ZENER bzx 46 c BZX55 COV8 ZENER bzx 46 c 20 ZENER bzx 55 c diode zener bzx 55 DIODE BZX 24 BZX55-C0V8 DIODE BZX 35
Text: BZX 55. SILICON PLANAR ZENER DIODES Silicon Planar Zener Diodes The Zener voltages are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages on request. max. 1.90 E« Cathode M ark max. 0.520 Glass case JEDEC DO-35
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DO-35
DIODE BZX 62
DIODE BZX
ZENER bzx 46 c
BZX55 COV8
ZENER bzx 46 c 20
ZENER bzx 55 c
diode zener bzx 55
DIODE BZX 24
BZX55-C0V8
DIODE BZX 35
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Untitled
Abstract: No abstract text available
Text: ZENER DIODES, 50 WATTS, DO-5 PACKAGE S t o « ill & mm N um ber 2 a tter Zener Voltage T ee l a t „ C u rre n t ¥> t«A> M aximum 2ener Im pedance at l,*S 0mA at l„ (m A ) 2,. (Ohm s) 1N33Q5 1NS3Q& 1N3307 1N3308 1N3309 6.8 7.5 8.2 9.1 10 1850 1700 1N3310
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1N33Q5
1N3307
1N3308
1N3309
1N3310
1N3312
1N3313
1N3314
1N3315
1N3316
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