RADAR 2900MHZ Search Results

Radar 2900mhz

Abstract: PHA2729-240M
Contextual Info: PHA2729-240M Radar Pulsed Power Module, 240W 2700MHz to 2900MHz, 100µS Pulse, 10% Duty Features • In-phase combined pulsed power transistors • Input and output matched to 50 Ohms • Soft substrate circuit board • Nickel plated copper flange • Easily combined for high power transmitters

Contextual Info: AM2931-125 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 125 W MIN. WITH 7.0 dB GAIN

Contextual Info: PRELIMINARY RFHA1021L RFHA1021L 60W GaN Wide-Band Pulsed Power Amplifier The RFHA1021L is a 50V 60W high power amplifier designed for SBand pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high

ck06 CAPACITOR

Abstract: AM2729-110 capacitor 100 uf
Contextual Info: AM2729-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 105 W MIN. WITH 6.5 dB GAIN

AM2729-110

Abstract: Radar 2900mhz radar amplifier s-band 2.7 2.9 GHZ thomson capacitor S-Band Power Amplifier
Contextual Info: AM2729-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 105 W MIN. WITH 6.5 dB GAIN

Contextual Info: RF3928B RF3928B 380W GaN Wide-Band Pulsed Power Amplifier 2.8GHz to 3.4GHz The RF3928B is a 65V 380W high power discrete amplifier designed for S-Band pulsed radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced

Contextual Info: 2729GN-500V 500 Watts - 50 Volts, 100 us, 10% S-Band Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 2729GN-500V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 11.2 dB

Contextual Info: SGS-THOMSON AM2931-125 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS P R E LIM IN AR Y DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P o u t = 125 W MIN. WITH 7 .0 dB GAIN

100 watts transistor s-band

Abstract: b 514 transistor
Contextual Info: 2729 120 120 Watts - 36 Volts, 100ms, 10% Radar 2700-2900 MHz PRELIMINARY CASE OUTLINE 55KS, STYLE 1 GENERAL DESCRIPTION The 2729-120 is an internally matched, COMMON BASE transistor capable of providing 120 Watts of pulsed RF output power at one hundred microseconds pulse width, ten percent duty factor across the

100 watts transistor s-band

Abstract: transistor d 331 b 514 transistor transistor 114-8 D 1380 Transistor
Contextual Info: 2729 – 120 120 Watts - 36 Volts, 100µs, 10% Radar 2700-2900 MHz PRELIMINARY CASE OUTLINE 55KS, STYLE 1 GENERAL DESCRIPTION The 2729-120 is an internally matched, COMMON BASE transistor capable of providing 120 Watts of pulsed RF output power at one hundred microseconds pulse width, ten percent duty factor across the

Pallet VHF Power Amplifier

Abstract: BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF
Contextual Info: RF Power Presentation Broadcast ISM , Microwave and Cellular Richard Marlow: European Regional Marketing February 2009 Microwave, Broadcast & ISM Markets Broadcast (TV and radio transmission) – – – – – NXP has a long history (as Philips) and excellent reputation in the market

Contextual Info: High Performance RF for the Most Demanding Applications GaN High Performance RF Power, GaN NXP’s mainstream GaN Technology Enables an NXP solutions offering that is technology agnostic NXP’s LDMOS and GaN can be combined in a line-up for optimum performance and cost

CP-16A

Abstract: CL2701-L
Contextual Info: Low Noise Amplifier CL2701-L / CL2702-L Product Features Applications • GaAs p-HEMT chip on board • No matching circuit needed • High Maximum input power +25dBm • High IP3 & Low Noise • Single Supply Voltage (+5V) • Surface Mount Hybrid Type • Tape & Reel Packaging

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

atc100a150

Abstract: power transistor gan s-band
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: /=T SGS-THOMSON A T /. Q a n K g ^ n L g g irM O ig i_ A M 2 7 2 9 - 1 1 0 RF & M I C R O W A V E T R A N S I S T O R S S -B A N D R A D A R A P P L I C A T I O N S • R EFR AC TO R Y/G O LD M ETALLIZATION ■ EM ITTER SITE BALLASTED ■ 3:1 VSWR CAPABILITY

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

RF3928B

Abstract: power transistor gan s-band RF392
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition

RMC-202313

Abstract: a4534 TOKO Inductance Test 10EZ toko coils 10.7 mhz TOKO rlc variable CAPACITANCE TOKO 10EZ A/RMC 4050 TMD80 126ANS-T1094Z
Contextual Info: 2014 RF & MICROWAVE RF Custom design & Manufacture Filters Aviation Passband Fillter………………………… 1 WLAN & Wi-Fi Filters ………………………………2 Compact Wideband BPF ………………………… 2 Aerospace & Defense Filters …………………… 3

CLH1005T-2N2S-S

Abstract: CLH1005T-8N2J-S CLH0603T-2N0S-F CLH1608T-R27J-S CLH1608T-R22J CLH0603T-15NJ-F
Contextual Info: SMD Ceramic Multilayer Chip Inductors - CLH Series CLH Series The CLH Series is a type of ceramic chip inductor produced using the multilayer technology. The series provides excellent Q factor and SRF characteristics and is suitable for high frequency applications.

Contextual Info: SMD Ceramic Multilayer Chip Inductors - CLH Series CLH Series The CLH Series is a type of ceramic chip inductor produced using the multilayer technology. The series provides excellent Q factor and SRF characteristics and is suitable for high frequency applications.

Contextual Info: SMD Ceramic Multilayer Chip Inductors - CLH Series CLH Series The CLH Series is a type of ceramic chip inductor produced using the multilayer technology. The series provides excellent Q factor and SRF characteristics and is suitable for high frequency applications.

Contextual Info: SMD Ceramic Multilayer Chip Inductors - CLH Series CLH Series The CLH Series is a type of ceramic chip inductor produced using the multilayer technology. The series provides excellent Q factor and SRF characteristics and is suitable for high frequency applications.