RADAR AMPLIFIER S-BAND 2.7 2.9 GHZ Search Results

Radar pallet

Abstract: RO6006 radar amplifier s-band ATC100A ATC100B
Contextual Info: BLS6G2933P-200 LDMOS S-Band radar pallet amplifier Rev. 01 — 28 May 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

Contextual Info: BLS6G2933P-200 LDMOS S-Band radar pallet amplifier Rev. 01 — 28 May 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

Contextual Info: LDMOS Transistors in Power Microwave Applications S.J.C.H. Theeuwen, H. Mollee NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands steven.theeuwen@nxp.com, hans.mollee@nxp.com Abstract— LDMOS transistors have become the device choice for microwave applications. An overview is given of the LDMOS

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed

LPC2148 i2c

Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Contextual Info: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.

AU-1566

Abstract: AU155 AU-1433 electronic passive components catalog 2A102 geosat AU-1612-70 miteq c-22
Contextual Info: Back to Amplifier Home Page BIPOLAR AMPLIFIERS Table Of Contents AMPLIFIERS TO 2 GHz • • • • AU SERIES AM SERIES AUP SERIES AMP SERIES Amplifiers • Amplifiers By Frequency • Ancillary Equipment • Medium Power Amplifiers • Special Application Amplifiers

HMC6000LP711E

Contextual Info: OFF-THE-SHELF October 2012 Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation Amplifier Modules Now Offer the Best Value! HMC-C059 Wideband LNA Module 19 New Featured Products! Wideband Multi-GHz Quantizer HMC9000 • 18 GHz Bandwidth

AD83xx

Abstract: ADL5552 AD8318 AD8348 AD6633 Philips RF PREAMP AD83x AD9956 circuit diagram bluetooth streaming tv AD8341
Contextual Info: RF Communications T H E June 2004 A N A L O G D E V I C E S S O L U T I O N S B U L L E T I N IN THIS ISSUE Logarithmic Detector Covers 1 MHz to 8 GHz New High Linearity Mixer Products . . . . . . . . . . . . . . . . . . . . . . . 2 o accurately regulate the transmit power in wireless networks, measurement

Pallet VHF Power Amplifier

Abstract: BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF
Contextual Info: RF Power Presentation Broadcast ISM , Microwave and Cellular Richard Marlow: European Regional Marketing February 2009 Microwave, Broadcast & ISM Markets Broadcast (TV and radio transmission) – – – – – NXP has a long history (as Philips) and excellent reputation in the market

STT 433

Abstract: variable capacitor erie ceramic RX1214B170W Tekelec
Contextual Info: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES RX1214B170W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium

hmc716

Abstract: 13617cf HMC734 HMC715 hmc 860 hmc700lp4 HMC700 MICROWAVE ASSOCIATES HMC734LP5E inphi
Contextual Info: MARCH 2009 OFF-THE-SHELF New DC to Millimeterwave ICs & Modules from Hittite 2009 Designer’s Guide Catalog Released! ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ VolumeA1NAL NALOG LO LO OG G & MIXED -SIGNAL ICS, MODULES,

3A102

Abstract: Frequency Triplers AU-1433 diodes catalog au-1180 au 1350 AM-3A-000110 microwave product catalog AU-4A-0110 AU155
Contextual Info: AMPLIFIERS TO 2 GHz • AU SERIES • AM SERIES • AUP SERIES • AMP SERIES • • • • • • LOW NOISE MEDIUM POWER WIDE BAND MRI BANDS CELLULAR/PCN BANDS INMARSAT BANDS TABLE OF CONTENTS CONTENTS PAGE INTRODUCTION 2 GENERAL SPECIFICATIONS 2 OPTIONS

EAR99

Abstract: hmc921 HMC245 hmc597 HMC767 hmc208
Contextual Info: Product Selection Guide Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation, DC - 110 GHz Automotive Telematics & Sensors Broadband Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB Cellular Infrastructure GSM, GPRS, CDMA, TD-SCDMA,

SKY85703

Abstract: SKY77758
Contextual Info: New Products Spring 2014 Table of Contents New Products Featured New Products by Market Smartphones, Handsets and Tablets . . . . . . . 3 Consumer Networking . . . . . . . . . . . . . . . . . . 5 Smart Energy Solutions . . . . . . . . . . . . . . . . . . 7

ear99

Abstract: x-band mmic core chip KHPA0618-30W hmc469 HMCAD1512
Contextual Info: Product Selection Guide Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation, DC - 110 GHz Automotive Telematics & Sensors Broadband Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB Cellular Infrastructure GSM, GPRS, CDMA, TD-SCDMA,

Contextual Info: CHK040A-SOA 40W Power Packaged Transistor GaN HEMT on SiC Description The CHK040A-SOA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and

BLS2731-10

Abstract: s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-10 Microwave power transistor Product specification Supersedes data of 1998 Mar 06 1998 Nov 25 Philips Semiconductors Product specification Microwave power transistor BLS2731-10 PINNING - SOT445C FEATURES • Suitable for short and medium pulse applications

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

TG2H214220-FL

Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
Contextual Info: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4

CHK040A-SOA

Abstract: CHK-04
Contextual Info: Advance Information: AI1011 40W Power Packaged Transistor GaN HEMT on SiC UMS’s CHK040A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium

NE5510279A

Abstract: uPB1512TU NE350184C dvbt diagram NE3503M04 5.8 ghz Transceiver IC NE552 gp bjt InMarSat demodulator ne3210s01
Contextual Info: Unplugged. Radio communication Higher frequency communication systems are one of today's growth markets. One factor is the increasing demand for point-to-point or pointto-multipoint radio links within the backbone of the 2G and 3G cellular networks. The other is