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    RADAR SYSTEM Search Results

    RADAR SYSTEM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLL1214-35
    		Rochester Electronics LLC L-band radar LDMOS driver transistor Visit Rochester Electronics LLC Buy
    TA82370-20
    		Rochester Electronics LLC 82370 - Integrated System Peripheral Visit Rochester Electronics LLC Buy
    MQ82370-20
    		Rochester Electronics LLC 82370 - Integrated System Peripheral Visit Rochester Electronics LLC Buy
    9513ASP
    		Rochester Electronics LLC System Timing Controller Visit Rochester Electronics LLC Buy
    NG82370-20
    		Rochester Electronics LLC 82370 - Integrated System Peripheral Visit Rochester Electronics LLC Buy

    RADAR SYSTEM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    radar 77 ghz

    Contextual Info: Analog, Mixed Signal and Power Management MRD2001 77 GHz Radar Transceiver Chipset High-resolution 77 GHz radar voltage-controlled oscillator VCO , receiver, transmitter chipset Target Applications Overview • Long-range radar (LRR), mid-range radar (MRR) and short-range radar


    Original     		MRD2001 MRD2001FS radar 77 ghz PDF

    front-end radar

    Abstract: radar
    Contextual Info: ADVANCES IN RECEIVER FRONT-END AND PROCESSING PRODUCTS Since the introduction of radar, the goal of the radar systems engineer has been to improve overall range and accuracy performance. Radar range is defined in the classical radar equation as: The minimal detectable signal Smin is, in reality, a statistical value based upon the probability of detection


    Original     		1960s 1970s, front-end radar radar PDF

    Contextual Info: Part Number: Integra IB1214M375 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor The high power pulsed radar transistor device part number IB1214M375 is designed for L-Band radar systems operating over the instantaneous bandwidth of


    Original     		IB1214M375 IB1214M375 IB1214M375-REV-PR1-DS-REV-NC PDF

    Contextual Info: Part Number: Integra IB2731MH110 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2731MH110 is designed for S-Band radar systems operating over


    Original     		IB2731MH110 IB2731MH110 IB2731MH110-REV-NC-DS-REV-B PDF

    Contextual Info: Integra Part Number: IBP2729MH300 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP2729MH300 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth


    Original     		IBP2729MH300 IBP2729MH300 IBP2729MH300-REV-NC-DS-REV-A PDF

    Contextual Info: Part Number: Integra IB1214M32 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M32 is designed for L-Band radar systems operating over


    Original     		IB1214M32 IB1214M32 IB1214M32-REV-NC-DS-REV-B PDF

    IBP2731M200

    Contextual Info: Part Number: Integra IBP2731M200 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP2731M200 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth


    Original     		IBP2731M200 IBP2731M200 IBP2731M200-REV-NC-DS-REV-B PDF

    Contextual Info: Part Number: Integra IB1214M150 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M150 is designed for L-Band radar systems operating


    Original     		IB1214M150 IB1214M150 IB1214M150-REV-NC-DS-REV-A PDF

    Contextual Info: Part Number: Integra IB2226M160 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2226M160 is designed for S-Band radar systems operating


    Original     		IB2226M160 IB2226M160 IB2226M2160 IB2226M160-REV-PR1-DS-REV-NC PDF

    Contextual Info: Part Number: IBP3135MH200 Preliminary Integra TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP3135MH200 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth


    Original     		IBP3135MH200 IBP3135MH200 IBP3135MH200-REV-PR1-DS-REV-NC PDF

    Contextual Info: Part Number: Integra IB1214M55 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high fT L-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB1214M55 is designed for L-Band radar systems operating over


    Original     		IB1214M55 IB1214M55 IB1214M55-REV-NC-DS-REV-C PDF

    Contextual Info: Part Number: Integra IB0810M50 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB0810M50 is designed for L-Band radar systems operating


    Original     		IB0810M50 IB0810M50 IB0810M50-REV-NC-DS-REV-A PDF

    Contextual Info: Part Number: Integra IBP3134M220 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP3134M220 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth


    Original     		IBP3134M220 IBP3134M220 IBP3134M220-REV-NC-DS-REV-NC PDF

    IB3135

    Contextual Info: Part Number: Integra IB3135MH5 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high fT S-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB3135MH5 is designed for S-Band radar systems operating


    Original     		IB3135MH5 IB3135MH5 100us IB3135MH5- IB3135 PDF

    Contextual Info: Part Number: Integra IB3135MH65 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high f T S-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB3135MH65 is designed for S-Band radar systems operating over the


    Original     		IB3135MH65 IB3135MH65 IB3135MH65-REV-NC-DS-REV-NC PDF

    Contextual Info: Part Number: Integra IBP3135M150 TECHNOLOGIES, INC. S-Band Radar Pallet Amplifier Silicon Bipolar Technology − Ultra-high fT Class C Operation − High Efficiency Part number IBP3135M150 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems


    Original     		IBP3135M150 IBP3135M150 IBP3135M150-REV-NC-DS-REV-NC PDF

    Contextual Info: Part Number: Integra IB2934M100 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2934M100 is designed for S-Band radar systems operating over


    Original     		IB2934M100 IB2934M100 IB2934M100-REV-PR1-DS-REV-NC PDF

    Contextual Info: Part Number: Integra IB2226MH15 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2226MH15 is designed for S-Band radar systems operating over the


    Original     		IB2226MH15 IB2226MH15 IB2226MH15-REV-NC-DS-REV-NC PDF

    HETERODYNE WAVE METER CIRCUITS

    Abstract: RD301 transmitter calibration certificate RD301A radar level transmitter magnetron ns radar radar detector receiver magnetron ns radar datasheet Magnetron pulse width 20 ns power supply for magnetron
    Contextual Info: Avionics RD-301A Weather Radar Test Set The RD-301A Weather Radar Test Set satisfies simulation requirements for new generation noncoherent radar systems • Automatic transmitter magnetron frequency tracking and digital read-out • Internal/external modulation for simulating target scintillation for turbulence


    Original     		RD-301A RD-301A HETERODYNE WAVE METER CIRCUITS RD301 transmitter calibration certificate RD301A radar level transmitter magnetron ns radar radar detector receiver magnetron ns radar datasheet Magnetron pulse width 20 ns power supply for magnetron PDF

    Contextual Info: Part Number: Integra IB3135MH75 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high f T S-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB3135MH75 is designed for S-Band radar systems operating over the


    Original     		IB3135MH75 IB3135MH75 IB3135MH75-REV-NC-DS-REV-A PDF

    Contextual Info: Part Number: Integra IB450S500 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT UHF Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB450S500 is designed for UHF radar systems operating at 450 MHz. While operating


    Original     		IB450S500 IB450S500 IB450S500-REV-NC-DS-REV-C PDF

    Contextual Info: Part Number: Integra IB2931MH55 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2931MH55 is designed for S-Band radar systems operating over the


    Original     		IB2931MH55 IB2931MH55 IB2931MH55-REV-NC-DS-REV-NC PDF

    bd 142 transistor

    Contextual Info: Part Number: Integra IB0810M12 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB0810M12 is designed for L-Band radar systems operating over the instantaneous


    Original     		IB0810M12 IB0810M12 IB0810M12-REV-NC-DS-REV-A bd 142 transistor PDF

    Contextual Info: Part Number: Integra IB1214M6 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M6 is designed for L-Band radar systems operating over


    Original     		IB1214M6 IB1214M6 IB1214M6-REV-PR1-DS-REV-B PDF