RAMBUS Search Results

Ba 33 bco

Contextual Info: Direct RDRAM RAMBUS TM 32/36-M bit 256K x16/18x8d ADVANCE INFORMATION O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application

Contextual Info: MR16R0824 6/8/C/G AN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 128M RDRAM(B-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 128M RDRAM (A-die) SPD Specification 1.02 version.

HYR1612820G-653

Abstract: HYR1612820G-745 HYR1612820G-840 HYR1612820G-845 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 INFINEON, B20 A17 INFINEON marking a86
Contextual Info: HYR 16xx20G/HYR 18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 144 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,

CDC921

Abstract: CDC924 CDCFR83 CDCFR83DBQ CDCFR83DBQG4 CDCFR83DBQR MO-137
Contextual Info: CDCFR83 DIRECT RAMBUS CLOCK GENERATOR SCAS665B − APRIL 2001 REVISED OCTOBER 2005 D 533-MHz Differential Clock Source for D D D D D D D D D Direct Rambus Memory Systems for an 1066-MHz Data Transfer Rate Synchronizes the Clock Domains of the Rambus Channel With an External System

Contextual Info: CY24272 Rambus XDR Clock Generator with Zero SDA Hold Time Rambus‚ XDR™ Clock Generator with Zero SDA Hold Time Features • Table 1. Device Comparison Meets Rambus Extended Data Rate XDR™ clocking requirements ■ 25 ps typical cycle-to-cycle jitter

hyundai rdram

Abstract: REF05
Contextual Info: HYRDU64164 / HYRDU72184 Series 64/72Mbit Direct RDRAM • HYUNDAI Advanced Information O verview The Direct Rambus™ DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and

Contextual Info: ill# ICW 0RKS Preliminary W134 Direct Rambus Clock Generator Features • D iffe re n tia l clo c k s o u rce fo r D irect R am bus m em o ry s u b ­ syste m fo r up to 8 0 0 M H z d a ta tra n s fe r rate S u p p ly V o lta g e : • P ro vid e s y n c h ro n iz a tio n fle x ib ility : th e R a m bu s C h a n n e l

circuit of rowa television

Abstract: toshiba b54
Contextual Info: TOSHIBA TH M R2E2Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 18-BIT 64M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2E2Z is a 33,554,432-word by 18-bit direct rambus dynamic RAM module consisting of 2 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.

Contextual Info: THMR2N16-6/-7/-8 TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 268,435,456-WORD BY 16-BIT 512M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2N16 is a 268,435,456-word by 16-bit direct rambus dynamic RAM module consisting of 16 TC59RM816MB and Direct Rambus DRAMs on a printed circuit board.

MIG toshiba

Abstract: ABB B45 THMR1E16-6 THMR1E16-7 B75 ABB hiab 837 B34 toshiba mig
Contextual Info: TOSHIBA THMR1E16-6/-7/-8 TO SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 18-BIT 256M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1E16 is a 134,217,728-word by 18-bit direct rambus dynamic RAM module consisting of 8 TC59RM718MB and 8 TC59M718RB Direct Rambus DRAMs on a printed circuit board.

HR128E08B

Abstract: HR128E08C HR128E08D HR128E08E HR128N08C HR128N08D HR128N08E
Contextual Info: 128 MB RIMMTM Module with 128/144Mb RDRAMs Direct Rambus RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and nonECC modules.

da53

Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
Contextual Info: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and

144MB

Abstract: B641 High Connection Density
Contextual Info: 64MB SO-RIMMTM Module with 128/144 Mb RDRAMs Direct Rambus SO-RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and

Direct-Rambus-RIMM

Abstract: ic marking B48 750 B36 Transistor NEC 12d G100 MC-4R128CPE6C IC MARKING A60 6043b label LOT CODE NEC
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128CPE6C Direct RambusTM DRAM RIMMTM Module 128M-BYTE 64M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other

da53

Abstract: uPD488385FB-C60-53-BF1 uPD488385FB-C80-40-BF1 uPD488385FB-C80-45-BF1 uPD488385FB-C80-50-BF1
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD488385 72 M-bit 256K x 18 x 16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where

Direct-Rambus-RIMM

Abstract: MC-4R128FKE6D PD488588 PD488588FF
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE6D Direct Rambus DRAM RIMMTM Module 128M-BYTE 64M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other

EL B17

Contextual Info: UGD128R16 8 08U6J(7J) Data sheets can be downloaded at www.unigen.com 256/288MB Bytes (128M x 16/18 bits) RAMBUS SO-RIMM MODULE 160 Pin SO-RIMM based on 8 pcs 8M x 16/18 RDRAM & 16K Refresh 128M x 16 bits, 128M x 18bits w/ECC, 800MHz and 600MHz GENERAL DESCRIPTION

EBR25UC8ABFD-8C

Abstract: EBR25UC8ABFD-AD EBR25UC8ABFD-AE EBR25UC8ABFD-AEP EDR2518ABSE EBR25UC8ABFD
Contextual Info: DATA SHEET 256MB Direct Rambus  DRAM RIMM  Module EBR25UC8ABFD 128M words x 16 bits Description Features The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including

SCK 183

Abstract: 128Mx16
Contextual Info: UG7128R16 8 16U6J(7J) Data sheets can be downloaded at www.unigen.com 256M Bytes (128M x 16/18 bits) RAMBUS RIMM MODULE 184 Pin RIMM based on 16 pcs 8M x 16/18 RDRAM & 4K Refresh 128M x 16 bits, 128M x 18bits w/ECC, 800MHz and 600MHz GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

Contextual Info: TOSHIBA cIOti7 2 4 a 0 0 2 ô b fl2 131 TC59R1809VK/HK PRELIMINARY 2,097,152 WORD x 9-BIT RAMBUS DYNAMIC RAM Description TheTC59R1809VK/HK Rambus Dynamic RAM RDRAM is a next-generation high-speed CMOS DRAM with a 2,097,152 x 9-bit organization and built-in slave logic. The 36,864 sense amps of the DRAM core are used as cache to achieve data

Contextual Info: • TOSHIBA TOTTEMfl G G S S Q S D MbM ■ TOSE TC59R1609VK TOSHIBA L06 IC/MFM0RY bSE » SILICON GATE CMOS 18 Mbit RDRAM t a r g e t DESCRIPTION The TC59R1609VK is a new generation ultra high speed CMOS Rambus™ DRAM organized as 2MX9. The TC59R1609VK uses advanced circuit design techniques with standard CMOS process technology. It

da53

Abstract: DB26 0195c Outline T39
Contextual Info: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other

da53

Abstract: DB26
Contextual Info: 1066 MHz RDRAMâ 512/576 Mb 8Mx16/18x4i Advance Information Overview • The 1066 MHz Rambus DRAM (RDRAMâ) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any

Contextual Info: TOSHIBA TH M R2 E4Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 18-BIT 128M Bytes Direct Rambus D RAM MODULE DESCRIPTION The THMR2E4Z is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 4 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.