RAMS Search Results

RAMS Result Highlights (5)

Part	Manufacturer	Description
MD2114A/BVA	Rochester Electronics LLC	STATIC RAM; 1K X 4
27S13A/BEA	Rochester Electronics LLC	27S13A - 2048-Bit (512X4) Bipolar RAM
CDP1824CD/B	Rochester Electronics LLC	CDP1824C - 32-Word x 8-Bit Static RAM
CY7C09389V-9AXI	Rochester Electronics	CY7C09389 - 3.3 V 64 K X 18 Synchronous Dual-Port Static RAM, Industrial Temp
MC68A02CL	Rochester Electronics LLC	MC68A02 - Microprocessor With Clock and Oprtional RAM

RAMS Price and Stock

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Panduit Corp RAMS-S3-M CABLE TIE HLDR SNGL SCREW #3 NAT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RAMS-S3-M	Bulk			1	1 $1.01 10 $0.944 100 $0.8785 1000 $0.81713 10000 $0.78932	Buy Now
Avnet Americas	RAMS-S3-M	Box		4 Weeks, 3 Days	1	1 $858.33 10 $731.31 100 $731.31 1000 $731.31 10000 $731.31	Buy Now
	RAMS-S3-M	Bag		8 Weeks	1,000	1 $536.16 10 $536.16 100 $536.16 1000 $536.16 10000 $536.16	Buy Now
Mouser Electronics	RAMS-S3-M		7,019			1 $1.01 10 $0.898 100 $0.854 1000 $0.817 10000 $0.663	Buy Now
Newark	RAMS-S3-M	Pack	1		1	1 $858.33 10 $731.31 100 $731.31 1000 $731.31 10000 $731.31	Buy Now
RS	RAMS-S3-M	Bulk		7 Weeks	1,000	1 - 10 - 100 - 1000 $0.89 10000 $0.8	Get Quote

Onlinecomponents.com	RAMS-S3-M		3,007			1 $0.693 10 $0.693 100 $0.693 1000 $0.63 10000 $0.6	Buy Now
Master Electronics	RAMS-S3-M		3,007			1 $0.693 10 $0.693 100 $0.693 1000 $0.63 10000 $0.6	Buy Now
Sager	RAMS-S3-M				1,000	1 - 10 - 100 - 1000 $0.4935 10000 $0.4752	Buy Now
TestEquity LLC	RAMS-S3-M					1 $765.29 10 $765.29 100 $765.29 1000 $765.29 10000 $765.29	Buy Now
CTS Corporation 228ADVARAMSC SWITCH TACTILE SPST-NO 0.05A 12V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	228ADVARAMSC	Tray			1,200	1 - 10 - 100 - 1000 - 10000 $1.28475	Buy Now
Avnet Americas	228ADVARAMSC	Tray		10 Weeks	1,000	1 - 10 - 100 - 1000 $1.30162 10000 $1.1016	Buy Now
Mouser Electronics	228ADVARAMSC					1 - 10 - 100 - 1000 - 10000 $1.09	Get Quote
Avnet Abacus	228ADVARAMSC			12 Weeks	200	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IRAMS10UP60A IC MOD PWR INTELLIGENT 10A 600V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRAMS10UP60A	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IRAMS06UP60A IC POWER MODULE PLUG N DRIVE INT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRAMS06UP60A	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IRAMS10UP60B-4 IC PWR MOD PLUG-N-DRIVE 600V 10A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRAMS10UP60B-4	Tube			80	1 - 10 - 100 $14.375 1000 $14.375 10000 $14.375	Buy Now

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RAMS Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
RAMS-S3-M	Panduit	CABLE ACCESSORIES TIES MOUNTS NYLON 6/6 NATURAL	Original	PDF
RAMS-S3-M	Panduit	Cable Ties - Holders and Mountings, Cables, Wires - Management, RIGHT ANGLE MNT	Original	PDF
RX433	Ramsey Electronics	RF Transmitter Module	Scan	PDF

RAMS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: RENESAS LSIs 2003.08.21 Ver. 7.0 M5M5V416CWG -55HI, -70HI 4194304-BIT 262144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION FEATURES The M5M5V416CWG is a f amily of low v oltage 4-Mbit static RAMs organized as 262144-words by 16-bit, f abricated by Renesas's	Original	PDF	M5M5V416CWG -55HI, -70HI 4194304-BIT 262144-WORD 16-BIT) 262144-words 16-bit, M5M5V416C
FT6163 Abstract: No abstract text available Text: FT6163/FT6163L Ultra High Speed 8K x 9 Static Cmos Rams FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current 7163L Military) Common I/O Fully TTL Compatible Inputs and Outputs Standard Pinout (JEDEC Approved)	Original	PDF	FT6163/FT6163L 28-Pin 25/35ns 25/35/45ns FT6163 FT6163L 728-bit
Untitled Abstract: No abstract text available Text: TM4164EC4 65,536 BY 4-BIT DYNAMIC RAM MODULE NOVEMBER 1983 - REVISED NOVEMBER 1985 SINGLE-IN-UNE PACKAGE 6 5 ,5 3 6 X 4 Organization TOP VIEW Single 5-V Supply (10% Tolerance) 22-Pin Single-in-Line Package (SIP) Utilizes Four 64K Dynamic RAMs in Plastic	OCR Scan	PDF	TM4164EC4 22-Pin
D425G Abstract: ACT21 SN74BCT2166 Text: SN74BCT2163, SN74BCT2164, SN74BCT2166 16K x 5 CACHE ADDRESS COMPARATORS/TAG RAMs SCHS012-D3513, JUNE 1990-REVISED NOVEMBER 1991 SN74BCT2163, SN74BCT2164 Fast Address to MATCH Delay. 12 ns Max FM PACKAGE CTOP VIEW ’BCT2163 Has Totem-Pole Match Output Q\*~	OCR Scan	PDF	SN74BCT2163, SN74BCT2164, SN74BCT2166 SCHS012-D3513, 1990-REVISED BCT2163 BCT2164 BCT2166 D425G ACT21
a14 Transistor Abstract: No abstract text available Text: TEXAS XNSTR QbE D \| 011.1751 0075454 5 \| SM61CD64, SMJ61CD64 65.536-W0RD BY 1-BIT STATIC RAMS Separate I/O J D PA C K A G E TOP VIEW AOC A1C A2C A3Q A4Q A5Q A6^ Military Temperature Range . . . -5 5 ° C to 125°C (M Suffix) • • Fast Static Operation	OCR Scan	PDF	SM61CD64, SMJ61CD64 536-W0RD 61CD64-30 61CD64-40 61CD64-55 536-bit a14 Transistor
Untitled Abstract: No abstract text available Text: TM S4500A DYNAMIC RAM CONTROLLER D 2 6 7 4 . JA N U A R Y 1982 TM S 4500A Controls Operation of 8K, 16K, 32K , and 64 K Dynam ic RAMs CLK ROY One Package Contains Address M ultiplexer, Refresh Control, and Timing Control • RENI CS ALE Directly Addresses and Drives Up to 2 5 6 K	OCR Scan	PDF	S4500A 66S303
SCAD002 Abstract: BCT2164 Text: SN74BCT2163, SN74BCT2164, SN74BCT2166 16K x 5 CACHE ADDRESS COMPARATORS/TAG RAMs _ D3513, JUNE 1990 — REVISED A U G U S T 1990 • Fast Address to MATCH Delay . . .12-ns Max • ’BCT2163 has Totem-Pole Match Output	OCR Scan	PDF	SN74BCT2163, SN74BCT2164, SN74BCT2166 D3513, 12-ns BCT2163 BCT2164 BCT2166 75-pF SCAD002
Untitled Abstract: No abstract text available Text: SM 64C16, SM J64C16 4096 WORD BY 4-BIT STATIC RAMS MARCH 1 98 7 —REVISED NOVEMBER 1987 Common I/O JO PACKAGE TOP VIEW • Military Temperature Range . . . - 5 5 ° C to 125°C (M Suffix) • Fast Static Operation • Battery Back-Up Operation . . . 2-Volt Data	OCR Scan	PDF	64C16, J64C16 64C16-35 64C16-45 SM64C16,
Untitled Abstract: No abstract text available Text: TM4256FL8, TM4256GU8 262,144 BY 8 BIT DYNAMIC RAM MODULES OCTOBER 1985 —REVISED FEBRUARY 1988 2 6 2 ,1 4 4 x 8 Organization TOP VIEW Utilizes Eight 256K Dynamic RAMs in Plastic Chip Carrier vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 NC NC DQ6 W Long Refresh Period . . . 4 ms (25 6 Cycles)	OCR Scan	PDF	TM4256FL8, TM4256GU8 30-Pin 4256FL8) 42S6GU8) 200en
TRW J500 Abstract: k45752 52S marking Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and	OCR Scan	PDF	uPD42S4260L uPD424260L 16-BIT, fiPD42S4260L, 424260L PD42S4260L 44-pin 40-pin /jPD42S4260L-A70, 424260L-A70 TRW J500 k45752 52S marking
Untitled Abstract: No abstract text available Text: SN74ACT2158, SN74ACT2159 8K x 9 CACHE ADDRESS COMPARATORS/DATA RAMs D 3 2 8 1 , M A Y 1 9 9 0 R E V IS E D J U N E 1990 Fast Address to MATCH Delay 22 ns Max FN PACKAGE TOP VIEW 8K x 10 Internal Static RAM ISCI 5 Ä • Word Reset Function for Single Entry	OCR Scan	PDF	SN74ACT2158, SN74ACT2159 ACT2159) ACT2158)
74ALS6302 Abstract: la 7184 74ALS6301 M 6302 XP 74als630 Text: SN74ALS6301, SN74ALS6302 DYNAMIC MEMORY CONTROLLERS D 2 9 0 0 . JA N U A R Y 1 9 8 6 —REVISED M A R C H 1 9 8 8 Provides Control for 16K, 64K. 256K, and 1M Dynamic RAMs SN 74ALS6301, S N 7 4A LS 6 30 2 . . Highest-Order Two-Address Bits Select One of Four Banks of RAMs	OCR Scan	PDF	SN74ALS6301, SN74ALS6302 74ALS6301, 74ALS6302 la 7184 74ALS6301 M 6302 XP 74als630
cxk5863b Abstract: CXK5863BM Text: SONY CXK5863BP/BM/BJ -25/30/35 8192-word x 8-bit High Speed CMOS Static RAM D escription CXK5863BP 28 pin DIP Plastic CXK5863BP/BM/BJ are 65,536 bits high speed CMOS static RAMs organized as 8,192 words by 8-bit and operate from a single 5V supply. These devices are	OCR Scan	PDF	CXK5863BP/BM/BJ CXK5863BP 8192-word 25ns/30ns/35ns 300mW CXK5863BM CXK5863BJ cxk5863b CXK5863BM
Untitled Abstract: No abstract text available Text: * SY10/100/101480-6 SY10/100/101480-8 SY10/100/101480-10 16K x 1 EC L RAM SYNERGY S E M IC O N D U C TO R DESCRIPTION FEATURES • Address access time, tAA: 6/8/10ns max. ■ Chip select access time, tAC: The Synergy SY10/100/101480 are 16384-bit Random Access Memories RAMs , designed with advanced Emitter	OCR Scan	PDF	SY10/100/101480-6 SY10/100/101480-8 SY10/100/101480-10 6/8/10ns SY10/100/101480 16384-bit 16384-words-by-1-bit 10K/100K SY100480 SY101480

TT104 Abstract: No abstract text available Text: - i I O rdering n u m b e r:EN 3929A SANYO SEMICONDUCTOR CORP S3E D N0.3929A TTTTDTb OQlOlll blS M T S A J LC36257P, PL, PM, PML CMOS LSI SA\YO 256 Kbit 32768 x 8 CMOS Static RAM i PINOUT OVERVIEW LC36257P series devices are silicon-gate, CMOS static RAMs configured as 32 768 x 8 bits. They incorporate	OCR Scan	PDF	LC36257P, LC36257P LC36257FL/PML-10/12 LC36257PL/PML-10/12 LC36257P/PM-10/12 TT104
Untitled Abstract: No abstract text available Text: Dynamic RAMs Synchronous DRAM Static RAMs Capacity 2M Organization 12 8 K X 1 6bits 2Bank Type No. Page L C 3 8 2 16 1T Pseudo RAMs . 191 • Pin Numbering W hen you face the to p side (m arking side) o f a package, w ith its pins tow ard you, num bering starts w ith	OCR Scan	PDF
as15 G Abstract: AS15 G IC AS15 U AS15 f ic as15 LC3516A-15 LC3516AL LC3516AM as15 h as15- f Text: F No.2360 A sy n c h ro n o u s'S ilic o n Gate CMOS LSI r i LC3516A,AM,AS/LC3516flL• AML.AS I 2048 W o rd s x 8 B its CMOS S ta tic RAMs - LC3516A series are fully asynchronous silicon gate CMOS static RAMs orga	OCR Scan	PDF	LC3516A AS/LC3516flL LC3516A/ LC3516AL/ as15 G AS15 G IC AS15 U AS15 f ic as15 LC3516A-15 LC3516AL LC3516AM as15 h as15- f
10ST10 Abstract: lq55 Text: Ordering n u m b e r:EN4794B CMOS LSI LC3564S, SS, SM, ST-70/85/10 64K 8192wordsX8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These RAMs are full CMOS type	OCR Scan	PDF	EN4794B LC3564S, ST-70/85/10 8192wordsX8 LC3564SS, LC3564SM, LC3564ST 8192-word 10ST10 lq55
LH5116H Abstract: No abstract text available Text: LH5116/H C M O S 16K 2 K x 8 S tatic RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized a s 2 ,0 4 8 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode	OCR Scan	PDF	LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil LH5116/H 24-pin LH5116H
idt7134 Abstract: CY7C1342 CY7C135 Text: fax id: 5203 ,.V.Ï.Ï.V.^ y nr' C Y 7C 135 Æ C Y p R E S S C Y 7C 1342 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Features True Dual-Ported memory cells which allow sim ulta neous reads of the sam e memory location 4K x 8 organization	OCR Scan	PDF	CY7C135 CY7C1342 65-micron 7C1342 52-pin IDT7134/IDT71342 CY7C1342 idt7134
dallas ds1213 Abstract: DS1213 8 pin DS1213 DS1213 DALLAS DS1213 smart socket rde 090 dallas ds1213 C Lithium Battery Protection Circuit for Battery P silr Text: !? D a lla s S e m ic o n d u c to r S m a rtS o c k e t 1 6 /6 4 K DS1213 FEATURES P IN C O N N E C T IO N S • Accepts standard 2 K x 8 and 8K x 8 CMOS sta tic RAMs [“ □¡ ^ D2 □ 2 ¡e&Hv 2 8 O -i 27n cc 27 □ j • Embedded lithiu m energy cell retains	OCR Scan	PDF	16/64K DS1213 24-pin 28-pin DS1213 28-pin, dallas ds1213 DS1213 8 pin DS1213 DALLAS DS1213 smart socket rde 090 dallas ds1213 C Lithium Battery Protection Circuit for Battery P silr
F16K Abstract: 96LS42DC 96LS42DM 96LS42PC 96LS42 Text: 96LS42 C O N N E C T IO N D IA G R A M P IN O U T A 96LS42 r ADDRESS MULTIPLEXER/REFRESH COUNTER For 16K D ynam ic RAMs \ c p D E S C R IP T IO N — T h e 96LS42 is an address m u ltip le x e r and refre sh co u n te r fo r m u ltip le x e d address d y n a m ic RAM s re q u irin g refre sh of 64 o r 128 cycles.	OCR Scan	PDF	96LS42 96LS42 96LS42, 96LS42. F16K 96LS42DC 96LS42DM 96LS42PC
1S26 Abstract: P4C116 P4C116L AD5e Text: PERFORMANCE SEMICONDUCTOR SDE V • 7 0 b 2 5 cl7 0001780 3äb * P S C P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS RAMS FEATURES ■ Full CMOS, 6T Cell Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) -12,15/20/25/35 ns (Commercial)	OCR Scan	PDF	P4C116/P4C116L 7Db25R7 P4C116L Technology11' 24-Pin P4C116/L P4C116L P4C116 Mil-Bul-103 -12PC 1S26 AD5e
SSSB Abstract: No abstract text available Text: HO» Pago 0001 01/16/89 11:19:17 Tx: AM27S07 - Ft: AMO FMT Am27S07 E 64-Bit Noninverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • Fully decoded 16-word x 4-bit tow power Schottky RAMs Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature	OCR Scan	PDF	AM27S07 64-Bit 16-word ffiflRfflQ66666df------- WF001210 SSSB

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RAMS Search Results

RAMS Result Highlights (5)

RAMS Price and Stock

Panduit Corp RAMS-S3-M

CTS Corporation 228ADVARAMSC

Infineon Technologies AG IRAMS10UP60A

Infineon Technologies AG IRAMS06UP60A

Infineon Technologies AG IRAMS10UP60B-4

RAMS Datasheets (3)

RAMS Datasheets Context Search

Untitled

FT6163

Untitled

D425G

a14 Transistor

Untitled

SCAD002

Untitled

Untitled

TRW J500

Untitled

74ALS6302

cxk5863b

Untitled

TT104

Untitled

as15 G

10ST10

LH5116H

idt7134

dallas ds1213

F16K

1S26

SSSB