RAS2 RESISTOR Search Results

TMS4116

Abstract: TMS4132
Contextual Info: MOS LSI TMS 4132 JDL 32,768-BIT DYNAMIC RANDOM-ACCESS MEMORY NOVEMBER 1979 32,768 «AX SUPPLY 1 X 1 Organization 10% Tolerance on All Supplies • All Inputs Including Clocks TTL-Compatible

4164 64k dram

Abstract: Z41H tms4164 S41128B
Contextual Info: TM S41128B 131,072-BIT DYNAMIC RANDOM-ACCESS MEMORY A PRIL 1985 —R EVISED NOVEM BER 1985 16-PIN PLASTIC DUAL-IN-LINE STACKED PACKAGES t 2 X 6 5 ,5 3 6 X 1 Organization TOP VIEW Single 5-V Supply (10% Tolerance) DC 1 U l 6 Uv s s wc 2 15 3 CA S RAS1C 3

ms-6535

Abstract: AA51 4116 lf 4116 16k ram 18-PIN BOX225012 TMS4132JDL 3as1 tms 375 CA31
Contextual Info: MOS LSI 32,768-BIT DYNAMIC RANDOM-ACCESS MEMORY i- 32,768 X — i- NOVEMBER 1978 1 Organization • 10% Tolerance on All Supplies All Inputs including Clocks TTL-Compatible 18-PIN SIDEBRAZE DUAL-IN-LINE PACKAGE TOP VIEW • Unlatched Three-State Fully TTL-Compatible

Contextual Info: Application Note 72 Pin SIMM Characteristics 72 Pin SIMM Design Considerations Control Architecture The table on page 1358 is a listing of the pinout of all 4 types of 72 pin SIMMs with those pins that have different usage identified. The following explains the

PQ62

Abstract: DQ73
Contextual Info: 168 Pin DIMM Characteristics. 168 Pin Buffered DIMM Characteristics Basic Architecture ECC Data Bit Assignments DRAM CHIPS Intended primarily for use in 8-byte systems, although use in 4-byte systems is supported via onboard interleave, the basic structure of 168 pin

PAL20V8

Abstract: BRY 56 C MACHXL AMD pal20v8 DRAM controller EPX780 rick jd MACH210 BRY 56 B Intel AP-726
Contextual Info: A AP-726 APPLICATION NOTE Interfacing the i960 Jx Microprocessor to the NEC µPD98401* Local ATM Segmentation and Reassembly SAR Chip Rick Harris SPG 80960 Applications Engineer Intel Corporation Semiconductor Products Group Mail Stop CH6-311 5000 W. Chandler Blvd.

MC-424000A36FE-60

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-424000A32, 424000A36 SERIES 4 M-WORD BY 32-BIT, 4 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-424000A32 series is a 4,194,304 words by 32 bits dynamic RAM module on which 8 pieces of 16 M DRAM: 4 M-word by 4 bits are assembled.

MCM54400A

Abstract: 5Bp power control 39NC60 126 motorola Nippon capacitors
Contextual Info: MOTOROLA Order this document by MCM64100/D SEMICONDUCTOR TECHNICAL DATA MCM64100 Product Preview 1M x 64 Bit Dynamic Random Access Memory Module 1 10 The MCM64100 is a dynamic random access memory DRAM module organized as 1,048,576 x 64 bits. The module is a JEDEC-standard 168-lead dual-in-line

SO DIMM 72-pin

Abstract: DIMM 72 pin out
Contextual Info: 72 Pin SO DIMM Characteristics . Application Note 72 Pin SO DIMM Characteristics Basic Architecture DRAM addressing effects A listing of the 72 Pin SO DIMM Pin Assignments is on page 2. SO DIMMs are designed to provide for a multitude of potential DRAM chip depth granularities as shown in

DIMM 72 pin out

Abstract: ms6464
Contextual Info: Application Note 72 Pin SO DIMM Characteristics Basic Architecture the following table: A listing of the 72 Pin SO DIMM Pin Assignments is on page 1374. Intended primarily for the emerging low-power mar­ ket, or any system in which space is at a premium,

motorola 26 pins connector

Abstract: A11 box Nippon capacitors
Contextual Info: MOTOROLA Order this document by MCM64400/D SEMICONDUCTOR TECHNICAL DATA MCM64400 Product Preview 4M x 64 Bit Dynamic Random Access Memory Module The MCM64400 is a dynamic random access memory DRAM module organized as 4,194,304 x 64 bits. The module is a JEDEC–standard 168–lead

SO DIMM DRAM 144 Pin Connector Pinout

Abstract: SO DIMM 100 Pin Connector Pinout "simm 72 pin" SO DIMM 72-pin 168-pin sdram dimm x64 edo dram 72-pin SO DIMM
Contextual Info: INFORMATION NOTE Presence Detect Assignments on SIEMENS Memory Modules 3.97 Weidlich, Technical Marketing Memories INFOMOD3.FRM MEMORY MODULES Overview: This information note describes the organisation and presence detect assignments used on the SIEMENS memory module families. The SIEMENS memory module families come with present

qml-38535

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add criteria for QD device types. Add vendor CAGE 3V146. Correct the SMD title. Update boilerplate to MIL-PRF-38535 requirements. - CFS 02-06-10 Thomas M. Hess B Correct the IIL test VCC from 4.5 V to 5.5 V in table I. Correct waveform timing

CY7BB991-7

Abstract: B00J AMD pal20v8 INTEL AP-72 Intel AP-726
Contextual Info: in tg l AP-726 APPLICATION NOTE Interfacing the i960 Jx Microprocessor to the NEC HPD98401* Local ATM Segmentation and Reassembly SAR Chip S e p te m b e r , 2 1 , 1 9 9 5 I Order Number: 272779-001 1-665 AP-726 Benefits of using the PCI-SDK include: This application note describes the interface between Intel's • The PCI-SDK plugs directly into a DOS-based

p77 cac

Abstract: MB85391A-60
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11209-1E MEMORY CMOS 4M x 32 FAST PAGE MODE DRAM MODULE MB85391A-60/-70 CMOS 4M × 32 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB85391A is a fully decoded, CMOS Dynamic Random Access Memory DRAM module consisting

MB85396A-70

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11205-1E MEMORY CMOS 4M x 36 FAST PAGE MODE DRAM MODULE MB85396A-60/-70 CMOS 4M × 36 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB85396A is a fully decoded, CMOS Dynamic Random Access Memory DRAM module consisting

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM64400 Product Preview 4M x 64 Bit Dynamic Random Access Memory Module The MCM64400 is a dynamic random access memory DRAM module organized as 4,194,304 x 64 bits. The module is a JED EC -standard 168-lead d u a l-in -lin e memory module (DIMM) with 84 separate contacts per side, consist­

Contextual Info: KMM364V213AJ/AT Fast Page Mode 2Mx64 DRAM DIMM Based on 2Mx8, 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM364V213A is a 2M bit x 64 Dynamic RAM high density memory module • Part Identification The - KMM364V213AJ 2048 cycles/32ms Ref. 400mil SOJ

VL4502

Abstract: TMS4500 VL4502-15PC thct4502 tms4500a
Contextual Info: VLSI T e c h n o l o g y , in c . VL4502 DYNAMIC RAM CONTROLLER DESCRIPTION FEATURES • Inputs are TTL voltage compatible • Controls operation of 64K and 256K dynamic RAMs • Creates static RAM appearance • One package contains address multiplexer, refresh control and

WTS 1.7 IC 28 PIN

Contextual Info: M IC R O N 1 MT12D88C140 1 MEG x 40. 2 MEG x 20 IC DRAM CA R D IC DRAM CARD 4 MEGABYTES 1 MEG x 40, 2 MEG x 20 PIN ASSIGNMENT End View 88-Pin Card (U-1) MARKING • Timing 60ns access 70ns access 80ns access -6 -7 GENERAL DESCRIPTION The MT12D88C140 is a 4 m egabyte, IC DRAM card

d947

Abstract: hy51v18164b
Contextual Info: • « H Y U N D A I H Y M 5 V 7 2 A 1 2 4 A R - S e r ie s Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V72A124A is a 2M x 72-bit EDO mode CMOS DRAM module consisting of two HY51V4404B in 20/26 pin SOJ or TSOP-II, four HY51V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168

Contextual Info: UG54W6646HSG-6 Revision History Jun 28 , 2002 Rev - B Pr el im in ar y Apr 30 , 1999 Rev - A Added More Detailed Dimension Information Of PCB , Full Data sheet Changed to new format. U N IG EN C O N FI D EN TI AL Datasheet released. 45388 Warm Springs Blvd. Fremont, CA. 94539

Contextual Info: ^Ordering number : ENN*6614 CMOS IC LC898023K SAÜŸO, 40x Playback/16x Write CD-R/RW Encoder/Decoder IC with Built-in SCSI Interface Preliminary Functions CD-ROM decoder/encoder functions CD decoder/encoder functions Pit and wobble CLV servo CAV audio functions

Contextual Info: MICRON TECHNOLOGY INC SSE D blllSMT OOCmR'ì'ì fiT? • MRN MT8D88C25632 256K x 32, 512K x 16 1C D R AM C A R D MICRON ■ ■ TECHNOLOGY. INC. _ :_ ~r-q 1C DRAM CARD 1 MEGABYTE 256K x 32, 512Kx 16 PIN ASSIGNMENT End View 88-Pin Card (U-1) • JEIDA, JEDEC and PCMCIA standard 88-pin IC