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    RAYTHEON DIRECT Search Results

    RAYTHEON DIRECT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    RAYTHEON DIRECT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12 volts 50 watt amplifier schematic diagram

    Abstract: schematic diagram power amplifier free schematic diagram power amplifier free a C3216X5R1A475KT 2 Watt rf Amplifier gsm signal amplifier circuit diagram RAYTHEON RMBA09500-58 G655966 2200J
    Text: Raytheon Raytheon Commercial Electronics RMBA09500-58 Cellular/GSM 2 Watt Linear GaAs MMIC Power Amplifier The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses RaytheonÕs pHEMT process. It is designed for use as a driver


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    PDF RMBA09500-58 RMBA09500 12 volts 50 watt amplifier schematic diagram schematic diagram power amplifier free schematic diagram power amplifier free a C3216X5R1A475KT 2 Watt rf Amplifier gsm signal amplifier circuit diagram RAYTHEON RMBA09500-58 G655966 2200J

    RAYTHEON

    Abstract: GRM39COG100J050AD RMBA19500 RMBA19500-58 03-o Raytheon Application Note DCS-1800
    Text: Raytheon Raytheon Commercial Electronics RMBA19500-58 PCS/DCS1800 2 Watt Linear GaAs MMIC Power Amplifier The RMBA19500 is a high power, highly linear Power Amplifier. The circuit uses RaytheonÕs pHEMT process. It has been designed for use as a driver stage for PCS/DCS1800 base stations, or as the output stage for


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    PDF RMBA19500-58 PCS/DCS1800 RMBA19500 RAYTHEON GRM39COG100J050AD RMBA19500-58 03-o Raytheon Application Note DCS-1800

    GRM36COG101J50

    Abstract: RMBA09501-58 RMBA09501A RMBA09501A-58 ba095 GRM39Y5V104Z50 grm39
    Text: RF Components RMBA09501A-58 - Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics2 Absolute Ratings The RMBA09501A is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon


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    PDF RMBA09501A-58 RMBA09501A GRM36COG101J50 RMBA09501-58 ba095 GRM39Y5V104Z50 grm39

    RMBA09501

    Abstract: RMBA09501-58 2 Watt rf Amplifier grm39 fr4 metal slug
    Text: RF Components RMBA09501-58 - Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics2 Absolute Ratings The RMBA09501-58 is a highly linear Power Amplifier. The two stage circuit uses Raytheon RF


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    PDF RMBA09501-58 RMBA09501 2 Watt rf Amplifier grm39 fr4 metal slug

    74LS132N

    Abstract: diode c05*10 Robinson Nugent ICA-243-S-TG TDC3310 1n4148 D035 HPS-03-G C052C104K5X5CA Robinson Nugent ICA-243 NSH-12DB-S2-TR
    Text: Electronics Semiconductor Division TMC1175AE1C The Evaluation Board for the TMC1175AE1C Description The TMC1175AE1C Evaluation Board brings all of the circuitry together for evaluating Raytheon Electronics’ TMC1175A CMOS A/D converter and the TDC3310 10-bit


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    PDF TMC1175AE1C TMC1175AE1C TMC1175A TDC3310 10-bit DS71175AE1 74LS132N diode c05*10 Robinson Nugent ICA-243-S-TG 1n4148 D035 HPS-03-G C052C104K5X5CA Robinson Nugent ICA-243 NSH-12DB-S2-TR

    cmos ic 4584

    Abstract: transistor on 4584 40E-12 CMOS 4584 raytheon Raytheon cmos Raytheon Company 2000 as "300 gate ttl array" raytheon
    Text: RAYTHEON/ SEMICONDUCTOR HE D I 75ci73tI0 0Q0t.5bl 3 Raytheon Company Semiconductor Division Raytheon CGA70E18 CGA40E12 CGA1ME12 High Density Low Power ECL Gate Array Family Features • Superior performance, lower power, and higher density than existing ECL arrays


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    PDF i73tI0 CGA70E18 CGA40E12 CGA1ME12 70E18) 70E18: cmos ic 4584 transistor on 4584 40E-12 CMOS 4584 raytheon Raytheon cmos Raytheon Company 2000 as "300 gate ttl array" raytheon

    MA164

    Abstract: MA373 7400 fan-in MA154 T-42-11-05
    Text: RAYTHEON-. 7597360 SEMICONDUCTOR RAYTHEON/ bb Î Ë | ?ST?3t.O 0 D D S D S 7 SEMICONDUCTOR Preliminary Product Specifications Configurable G ate Arrays 66C T 05057 - 7-U - C G A 50L15/35L12 Raytheon CGA 50L15/35L12 Oxide Isolated ISL Bipolar Gate Arrays


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    PDF 7----T-42-U-05 50L15/35L12 50L15/35L12 MA167 MA170 MA183 CA94039 MA164 MA373 7400 fan-in MA154 T-42-11-05

    Untitled

    Abstract: No abstract text available
    Text: RAYTHEON-. SEMICONDUCTOR 57 DE* □□□MflOb Ö T- 7 3- 1 3- 03 57C 0 4 8 0 6 7 5 9 7 3 6 0 RAYTHEON CO» LINEAR INTEGRATED CIRCUITS PRODUCT SPECIFICATIONS Voltage-to-Frequency Converters Raytheon Features • Single supply operation ■ Pulse output compatible with all logic forms


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    PDF 7ST73t RC4151,

    transistor T79

    Abstract: LM324N LM224J
    Text: RAYTHEON-. SEMICONDUCTOR 57 » É J 75^73^.0 O O O M ^ 57C 0 4 4 4 9 .7597 360 RAYTHEON CO* PRO D U CT SPECIFICATIO N S Raytheon Single-Supply Quad Operational Amplifiers Features • ■ ■ ■ ■ ■ Large DC voltage gain — 100dB Compatible with all forms of logic


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    PDF LM124/224/324 100dB LM124/224/324/2902 i73bO 5-01800A transistor T79 LM324N LM224J

    raytheon dbs

    Abstract: RMM9060-53
    Text: Raytheon Electronics \ h - 950-2150 MHz GaAsMMIC DBS Twin IFSwitch Amplifier The Raytheon RMM9060-53 is intended for use in Direct Broadcast Satellite DBS applications within the Low Noise Block (LNB) downconverter for systems where at least two LNB outputs are required. It offers two


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    PDF RMM9060-53 raytheon dbs

    RC3302DB

    Abstract: ic lm 339 RC3302 LM339AJ av 339 pin for lm 339 ic lm339n Linear Integrated Circuit LM2901 LM 339 application note LM339AM raytheon
    Text: RAYTHEON-, SEMICONDU CTOR S7 57C 0 4 6 9 8 7 5 9 7 3 6 0 RAYTHEON CO» D LINEAR INTEGRATED CIRCUITS PRO D U CT SPECIFIC A TIO N S Raytheon DËj| 7ST7 3bO OOGMbTfl Single-Supply Quad Comparators Features • Input common mode voltage range includes ground ■ Wide single supply voltage range — 2V to 36V


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    PDF LM139/139A, 239/239A, 339/339A, RC3302 1N914 73tiO 0470ci RC3302DB ic lm 339 RC3302 LM339AJ av 339 pin for lm 339 ic lm339n Linear Integrated Circuit LM2901 LM 339 application note LM339AM raytheon

    RC4156DB

    Abstract: RM4156DC RC4156DC RC4156D triangle wave generator using 741 RM4156 RC4156DB circuit diagram rc4156
    Text: RAYTHEON-. S E M I C O N D U C T O R 57 I>e 7 5 ^ 7 3 ^ 0 OODMt.27 fi | ~ 57G 0 4 6 2 7 7 5 9 7 3 6 0 RAYTHEON CO, LINEAR INTEGRATED CIRCUITS PRODUCT SPECIFICATIONS Raytheon High Performance Quad Operational Amplifier RC4156 Mask Pattern Features • Unity gain bandwidth —


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    PDF T-79-05-4Q RC4156 00D4L3fl 20kHz RC4156DB RM4156DC RC4156DC RC4156D triangle wave generator using 741 RM4156 RC4156DB circuit diagram rc4156

    Untitled

    Abstract: No abstract text available
    Text: Raytheon Electronics Œ « â » Description The Raytheon RMLA12000-70 is a 2 stage GaAs MMIC PHEMT LNA for use in Direct Broadcast Satellite DBS and phased array front end applications. This device is particularly useful for Twin and Quattro LNB applications requiring low noise RF input amplification while minimizing


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    PDF RMLA12000-70

    R29771

    Abstract: 6aj7 r296xx programming the R29771 R29773 PROM
    Text: RAYTHEON/ SEMICONDUCTOR 27E D • 7ST73tiO DGObTSD 3 ■ Product Specifications PROMs/SPROMs “T -4& -/3'¿15 R29700 Series Raytheon 4096 x 8 R29771/R29773 Standard PROMs and Power-Switched SPROMs Features/Benefits ■ Devices are available in both commercial


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    PDF 7ST73tiO R29700 R29771/R29773 24-pin, R29771 6aj7 r296xx programming the R29771 R29773 PROM

    Untitled

    Abstract: No abstract text available
    Text: RC4391 ?ST73tiG O O Oböfll T • f - RAYTHEON/ SEMICONDUCTOR RC4391 Inverting and Step-Down Switching Regulator The 4391 complements the other Raytheon switching regulator 1C, the RC4190. The 4190 is dedicated to step-up VOUT > VIN applica­ tions, while the 4391 was designed up for


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    PDF RC4391 ST73tiG RC4190. 100pF

    circuit integrate TB 1226 CN

    Abstract: RC4200ANB RC4200ADE RC420 RM4200 rv4200nb "analog multiplier" RC4200NB rc4200 raytheon
    Text: RAYTHEON-, 7597360 SEMICONDUCTOR 57 T F 1 TSTTgbD RAYTHEON COf 5 7C “i 04913 D T-73- LINEAR INTEGRATED CIRCUITS PRODUCT SPECIFICATIONS R a y H ie o n Analog Multiplier Features • High accuracy Non-linearity — 0.1% maximum Temperature coeff icient— 0.005%/° C maximum


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    PDF T-73PRODUCT RC4200 RC4200 RV4200NB RC4200NB RV4200ANB RC4200ANB circuit integrate TB 1226 CN RC4200ADE RC420 RM4200 "analog multiplier" rc4200 raytheon

    Untitled

    Abstract: No abstract text available
    Text: 1 8 1991 Preliminary Product Specifications Linear Integrated RV4141 Raytheon RV4141 Low Power Ground Fault Interrupter interrupter then disconnects the load from the line before a harmful or lethal shock occurs.


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    PDF RV4141 RV4141 MS-012-AA

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Specifications Linear Integrated Circuits_ RV4140 Raytheon RV4140 Low Power Two Wire Ground Fault Interrupter Controller Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ Powered from the ac line Built-in bridge rectifier Direct interface to SCR


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    PDF RV4140 RV4140 MS-012-AA

    mu24 dc

    Abstract: SWT-2
    Text: APR F*r88uct Specifications Linear Integrated RFA120 Raytheon RFA120 Linear FET Macrocell Array General Features • ■ ■ ■ ■ 8 FET macrocells 4 bipolar macrocells Dual-layer metallization for high integration


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    PDF r88uct RFA120 mu24 dc SWT-2

    Untitled

    Abstract: No abstract text available
    Text: RAYTHEON/ SEMICONDUCTOR 11E D | 75^731,0 QQDt.aH 0 | Linear Custom 1C Design Services and Manufacturing _ Thin-Film Sputtering Options Foundation Processes Ion Implant and Metal Options JFET Transistors Thin-Film Resistors


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    PDF 24-lead 350x175 28-lead 40-lead 310x310 14-lead 16-lead 110x140 20-lead

    Untitled

    Abstract: No abstract text available
    Text: Prelim inary Information Raytheon Electronics Semiconductor Division RC6601 Programmable Video Filter Features Applications 1 MHz to 10 MHz minimum program mable range Approximates CCIR601 digital video standard Phase corrected for m inim um group delay variation


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    PDF RC6601 CCIR601 16-pin RC6601 173bO RC6601M cl73bO

    5AMP11

    Abstract: 250 kv x ray Cathode indicated by blue band Raytheon Company cathode ray
    Text: RAYTHEON TECHNICAL INFORMATION SERVICE Teolmiostl Information 5AMP- * CATHODE RAY TUBE MECHANICAL DATA The 5AMP— is a 5 " electrostatic focus and deflection cathode ray tube designed for oscilloscope applications. BASE . . Medium Shell Diheptal 1 2 -P in


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Raytheon Electronics Semiconductor Division R C 6100 Horizontal Line Genlock Features Applications • High speed tracking sync separator easily follows hum or average picture level APL fluctuations • Glitch remover for operation in high im pulse noise


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    PDF RC6100 highfre50 TMC1175 TDC3310 7ST73tiO RC6100 RC6100M

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Specifications Communications Products RCC701 Raytheon September 29,1993 RCC701 Fibre Channel/ESCON /ATM/SSA™ TRANSCEIVER 200 or 265.625 Megabaud Features • 200 or 265.625 Megabaud data rates ■ Compliant with the Fibre Channel and ESCON


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    PDF RCC701 68-pin 64-pin