RAYTHEON EMITTER PAD Search Results
RAYTHEON EMITTER PAD Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPA3250D2DDW |
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70W Stereo / 130W Peak Ultra-HD, Analog-In, Pad-Down Class-D Amplifier 44-HTSSOP 0 to 70 |
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TPA3244DDWR |
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60W Stereo / 110W Peak Ultra-HD Analog-In, Pad-Down Class-D Amplifier 44-HTSSOP 0 to 70 |
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TPA3244D2DDW |
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40-W Stereo, 100-W Peak PurePath Ultra-HD Pad Down Class-D Amplifier 44-HTSSOP 0 to 70 |
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TPA3250D2DDWR |
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70W Stereo / 130W Peak Ultra-HD, Analog-In, Pad-Down Class-D Amplifier 44-HTSSOP 0 to 70 |
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TPA3220DDW |
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50W Stereo / 100W Peak HD Analog-Input Pad-Down Class-D Amplifier 44-HTSSOP -40 to 85 |
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RAYTHEON EMITTER PAD Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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raytheon emitter padContextual Info: RAYTHEON-. SEMICONDUCTOR Lb 7 5 9 7 3 6 0 RAYTHEON» SEMICONDUCTOR Prelim inary Product Specifications Linear integrated C ircuits D e 7 5 ^ 7 3 ^ 0 DOOSODl 66C 0 5 0 0 1 LP165/365 Raytheon LP165/365 Micropower Programmable Quad Comparator Features • Single programming resistor tailors power, |
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LP165/365 LP165/365 54BSC 16-Lead 100BSC raytheon emitter pad | |
2n4080
Abstract: 2N4260 2N4957 JAN JAN2N4957 2N4261 JAN raytheon npn raytheon emitter pad
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2N4260 2N4261/JAN 2N4957/JAN 2N4261J 2N4957J 10Oil 0003St 050BSC 100BSC 54BSC 2n4080 2N4957 JAN JAN2N4957 2N4261 JAN raytheon npn raytheon emitter pad | |
2N3726
Abstract: 45-BSC JAN2N2905A 2n2907a raytheon 2N2004 2N2907AJ 2N3503 RAYTHEON SP2907AQD 2N721
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7ST73b0 500mA. 2N2907A/JAN 2N2906A/JAN 2N2905A/JAN 2N2904A/JAN 65-1006B 100BSC 54BSC O-116) 2N3726 45-BSC JAN2N2905A 2n2907a raytheon 2N2004 2N2907AJ 2N3503 RAYTHEON SP2907AQD 2N721 | |
Contextual Info: Special Functions RC4447 RC4447 Quad PIN Diode Switch Driver Features currents of the RC4447 are closely controlled through the use of Si-Cr thin-film resistor networks, resulting in repeatable ac character istics and a stable dc bias point. Well-matched |
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RC4447 RC4447 RM4447 20-lead Mil-Std-883 Mil-Std-883, | |
AT3904
Abstract: raytheon transistor AT3866A BC177 pnp transistor AT915 Raytheon AT3906 transistor eb 2030 AT720 AT918 at3209
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AT328A AT329A. BCY17-34 AT3906. AT3905 AT4125. AT4126 75cl73b0 0DD7373 AT3904 raytheon transistor AT3866A BC177 pnp transistor AT915 Raytheon AT3906 transistor eb 2030 AT720 AT918 at3209 | |
SCHEMATIC DIAGRAM OF POWER SAVER DEVICE
Abstract: power saver schematic diagram SCHEMATIC DIAGRAM OF electrical saver BV68 1530Q BM138 D9323 schottky transistor spice I1211 PIN DIODE .cir spice
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RC4447 RC4447 Mil-Std-883 RM4447 20-lead SCHEMATIC DIAGRAM OF POWER SAVER DEVICE power saver schematic diagram SCHEMATIC DIAGRAM OF electrical saver BV68 1530Q BM138 D9323 schottky transistor spice I1211 PIN DIODE .cir spice | |
Contextual Info: _ i _ s-RAYTHEON/ bb SEMICONDUCTOR d e Its ^ L iO DOOSOñi O T - 3 7~<5Product Specifications Sm all Signal Transistors G A PNP Raytheon Low Level, General Purpose Amplifiers and Switches Description G A PNP General purpose low power amplifier and |
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100mA. 2N3250A/JAN 2N3251A/JAN 5-1022A DDDS01S 27BSC 254BSC 050BSC 100BSC | |
Contextual Info: Section5 HE D | 7 5 c173fcjCl 0Q0feil35 Û | LM111/LH2111 RAYTHEON/ SEMICONDUCTOR T- LM111/LH2111 Voltage Comparators Description These low-input current voltage comparators are designed to operate over a wide range of supply voltages, including ±15V and single +5V |
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c173fcjCl 0Q0feil35 LM111/LH2111 LM111/LH2111 LH2111 LM111 16-lead Mil-Std-883B | |
22XISET
Abstract: lp165
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LP165/365 LP165/365 22XISET lp165 | |
Contextual Info: RAYTHEON/ SEMICONDUCTOR 33E D • 7S^73t,Q □□07471 1 B f R T N Product Specifications Sm all S ign a l Transistors C B NPN R a y tfe & o a i 1 7=-27-2 p * 7~-27-27 Medium Current General Purpose Amplifiers and Switches C B NPN Description General purpose medium power amplifier and |
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500mA. 2N2222A/JAN 2N2221A/JAN 2N2219A/JAN 2N2218A/JAN 968-9211um T-27-27 O-116) 14-Lead 100BSC | |
amplifier CV 203
Abstract: 2N2708 2n3424 2N3423 2N918 JAN 2n917 die raytheon npn 0100BSC 254BSC 2n2857
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75T73bD 2N917 2N918/JAN 2N2608 2N2857 Fj7S173tO O-116) 14-Lead 100BSC 548SC amplifier CV 203 2N2708 2n3424 2N3423 2N918 JAN 2n917 die raytheon npn 0100BSC 254BSC 2n2857 | |
sp3725
Abstract: 2N3252 raytheon 2n
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3724/A 3725/A 3735/JA 2N3736 3737/JAN 2N4013 2N4014 2N4013, 2N3724 54BSC sp3725 2N3252 raytheon 2n | |
SP3467QDBContextual Info: RAYTHEON/ SEMICONDUCTOR T4 RAYTHEO N. TSTYBbO OGOS SMH 7 SMALL SIGNAL TRANSISTORS p r o d u c t specificatio n s 7597360 d ÊTJ S E M IC O N D U C T O R 94D 05543 High Current, High Speed Switches D i-si-cs' Popular Types Description The GK is a platinum doped transistor. |
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2N3467/JAN 2N3468/JAN 2N3762/JAN 2N3763/JAN O-116) 14-Lead 54BSC 100BSC SP3467QDB | |
Contextual Info: RAY THE ON/ SEM IC O N D U C T OR 7597360 "TM RAYTHEON. D Ë J 75=1731.0 0005551 b SE M IC O N D U C T O R 94D Product Specifications Small Signal Transistors 0555 1 D 712S~-/3~ C J N PN Raytheon Ultra High Speed Switches CJ NPN Description High speed gold doped silicon epitaxial tran |
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100mA. 2N2369A/JAN 2N4137 2N706A 2N2368 27BSC -050BSC 54BSC | |
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2n3817
Abstract: 2N3804 2N3800 2N3802 2N3812 2n3816 raytheon emitter pad 2N381 2N4942 raytheon npn
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75T73fc 2604/JA 2605/JA 54BSC O-116) 14-Lead 100BSC 2n3817 2N3804 2N3800 2N3802 2N3812 2n3816 raytheon emitter pad 2N381 2N4942 raytheon npn | |
2N3640
Abstract: 2N3304 2n4208 2N2409 2N4258 High Speed Switches 2n2894a 2N5910 sm 58 b transistors 2N2894
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2N4208 2N2409 2N5910 2N2894A 65-1025B 050BSC 100BSC 27BSC 54BSC 2N3640 2N3304 2n4208 2N2409 2N4258 High Speed Switches 2n2894a 2N5910 sm 58 b transistors 2N2894 | |
SCR 40 RIA 120Contextual Info: Special Functions RC4444 RC4444 4 x 4 x 2 Balanced Switching Crosspoint Array Features • ■ ■ ■ ■ ■ Mask Pattern Low bidirectional Ron High Roff Excellent matching of gates Low capacitance High rate firing Predictable holding current Description |
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RC4444 RC4444 SCR 40 RIA 120 | |
2N2937
Abstract: 27c03 sp2639 2n760A Jan 2N2453 2N2903A 2N757 2N759AJ 2n2915 203 2n2484
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2N930/JAN 2N2484/JAN 2N3117 2N930JAN 2N2484JAN 54BSC 27BSC 100BSC 050BSC -100BSC 2N2937 27c03 sp2639 2n760A Jan 2N2453 2N2903A 2N757 2N759AJ 2n2915 203 2n2484 | |
Contextual Info: RC4391 ?ST73tiG O O Oböfll T • f - RAYTHEON/ SEMICONDUCTOR RC4391 Inverting and Step-Down Switching Regulator The 4391 complements the other Raytheon switching regulator 1C, the RC4190. The 4190 is dedicated to step-up VOUT > VIN applica tions, while the 4391 was designed up for |
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RC4391 ST73tiG RC4190. 100pF | |
Contextual Info: Special Functions RC4444 RC4444 4 x 4 x 2 Balanced Switching Crosspoint Array Mask Pattern Features • ■ ■ ■ ■ ■ Low bidirectional Ron High Ro ff Excellent matching of gates Low capacitance High rate firing Predictable holding current 2120 19 18 |
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RC4444 RC4444 600X1 | |
rc4200 raytheon
Abstract: rc4200 rm4200 analog multipliers
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RC4200 250juA) 10siruut 173tjG rc4200 raytheon rc4200 rm4200 analog multipliers | |
Contextual Info: Special Functions RC4200 RC4200 Analog Multiplier Features • High accuracy Non-linearity — 0.1% maximum Temperature coefficient — 0.005%/° C typical ■ Multiple functions Multiply, divide square, square root, RMS-to-DC conversion, AGC, and modulate/demodulate |
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RC4200 250/iA) 250pA) | |
RC4200
Abstract: RC4200 equivalent DC to 500 MHz RMS-to-DC Converter rc4200 raytheon raytheon emitter pad
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RC4200 RC4200 85-01S64A 5-01883A 250/uA) 10sinm RC4200 equivalent DC to 500 MHz RMS-to-DC Converter rc4200 raytheon raytheon emitter pad | |
Contextual Info: Raytheon Electronics Semiconductor Division RC5102 Dual A djustable Voltage R egulators • • • • • • • • • The RC5102, in combination with low Rds,on n-channel MOSFETs, provides a precision low-dropout dual voltage regulator for Pentium, Cyrix and Power PC® CPUs. By |
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RC5102 RC5102, RC5102 DS30005102 |