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    RAYTHEON TRANSISTOR Search Results

    RAYTHEON TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RAYTHEON TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RAYTHEON

    Abstract: RMPA0951-102 RO4003 PA0951
    Text: Raytheon Raytheon Commercial Electronics RMPA0951-102 3V Cellular CDMA Power Amplifier Module The RMPA0951-102 is a dual mode, small outline power amplifier module for Cellular CDMA personal communication system applications. The Power Amplifier Module is internally-matched to 50 ohms and DC blocked which


    Original     		PDF RMPA0951-102 RMPA0951-102 RMPA0951 RAYTHEON RO4003 PA0951

    gsm signal amplifier circuit diagram

    Abstract: GSM module circuit diagram MAX 8778 Power Amplifier Module for GSM RAYTHEON GSM module DCS1800 GSM900 RMPA1955-99 BW-100
    Text:  Raytheon Commercial Electronics RMPA1955-99 3V Dual-Band GSM Power Amplifier Module Description The RMPA1955-99 is a Dual-band GSM Power Amplifier PA Module which uses Raytheon’s Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip carrier module


    Original     		PDF RMPA1955-99 RMPA1955-99 gsm signal amplifier circuit diagram GSM module circuit diagram MAX 8778 Power Amplifier Module for GSM RAYTHEON GSM module DCS1800 GSM900 BW-100

    RAYTHEON

    Abstract: RMPA2051 RMPA2051-102 RO4003 Rogers RO4003 mmic marking brown
    Text: Raytheon Raytheon Commercial Electronics RMPA2051-102 3V WCDMA/CDMA2000 Power Amplifier Module The RMPA2051-102 is a small outline, low-profile power amplifier for WCDMA/CDMA2000 applications. The Power Amplifier Module PAM is internally matched to 50 ohms and DC blocked which minimizes the use of


    Original     		PDF RMPA2051-102 WCDMA/CDMA2000 RMPA2051-102 50-ohm RAYTHEON RMPA2051 RO4003 Rogers RO4003 mmic marking brown

    AT3904

    Abstract: raytheon transistor AT3866A BC177 pnp transistor AT915 Raytheon AT3906 transistor eb 2030 AT720 AT918 at3209
    Text: RAYTHEON/ SEMICONDUCTOR 27E D • 7S^73bD DQDTBbT Raytheon Company Semiconductor Division S ■ 7^27-9*? Raytheon Transistor Dice Catalog I RAYTHEON/ SEMICONDUCTOR 27E D ■ TSTVBbO 0007370 1 ■ J-S7- 11 Features Shipping Formats ■ Wafer size 2'A inches, 3 inches


    OCR Scan     		PDF AT328A AT329A. BCY17-34 AT3906. AT3905 AT4125. AT4126 75cl73b0 0DD7373 AT3904 raytheon transistor AT3866A BC177 pnp transistor AT915 Raytheon AT3906 transistor eb 2030 AT720 AT918 at3209

    2N2937

    Abstract: 27c03 sp2639 2n760A Jan 2N2453 2N2903A 2N757 2N759AJ 2n2915 203 2n2484
    Text: RAYTHEON/ "ä ? SEMICONDUCTOR 7597360 D eT | 7 5 ^ 7 3 ^ 0 G G D B S a S Ì 27C RAYTHEON CO» D Low Level, Low Noise, High Gain Amplifiers RAYTHEON CL 0353 5 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS NPN Popular Types Description General purpose am plifier for low


    OCR Scan     		PDF 2N930/JAN 2N2484/JAN 2N3117 2N930JAN 2N2484JAN 54BSC 27BSC 100BSC 050BSC -100BSC 2N2937 27c03 sp2639 2n760A Jan 2N2453 2N2903A 2N757 2N759AJ 2n2915 203 2n2484

    cmos ic 4584

    Abstract: transistor on 4584 40E-12 CMOS 4584 raytheon Raytheon cmos Raytheon Company 2000 as "300 gate ttl array" raytheon
    Text: RAYTHEON/ SEMICONDUCTOR HE D I 75ci73tI0 0Q0t.5bl 3 Raytheon Company Semiconductor Division Raytheon CGA70E18 CGA40E12 CGA1ME12 High Density Low Power ECL Gate Array Family Features • Superior performance, lower power, and higher density than existing ECL arrays


    OCR Scan     		PDF i73tI0 CGA70E18 CGA40E12 CGA1ME12 70E18) 70E18: cmos ic 4584 transistor on 4584 40E-12 CMOS 4584 raytheon Raytheon cmos Raytheon Company 2000 as "300 gate ttl array" raytheon

    MA164

    Abstract: MA373 7400 fan-in MA154 T-42-11-05
    Text: RAYTHEON-. 7597360 SEMICONDUCTOR RAYTHEON/ bb Î Ë | ?ST?3t.O 0 D D S D S 7 SEMICONDUCTOR Preliminary Product Specifications Configurable G ate Arrays 66C T 05057 - 7-U - C G A 50L15/35L12 Raytheon CGA 50L15/35L12 Oxide Isolated ISL Bipolar Gate Arrays


    OCR Scan     		PDF 7----T-42-U-05 50L15/35L12 50L15/35L12 MA167 MA170 MA183 CA94039 MA164 MA373 7400 fan-in MA154 T-42-11-05

    raytheon emitter pad

    Abstract: No abstract text available
    Text: RAYTHEON-. SEMICONDUCTOR Lb 7 5 9 7 3 6 0 RAYTHEON» SEMICONDUCTOR Prelim inary Product Specifications Linear integrated C ircuits D e 7 5 ^ 7 3 ^ 0 DOOSODl 66C 0 5 0 0 1 LP165/365 Raytheon LP165/365 Micropower Programmable Quad Comparator Features • Single programming resistor tailors power,


    OCR Scan     		PDF LP165/365 LP165/365 54BSC 16-Lead 100BSC raytheon emitter pad

    Untitled

    Abstract: No abstract text available
    Text: RAYTHEON-. SEMICONDUCTOR 57 DE* □□□MflOb Ö T- 7 3- 1 3- 03 57C 0 4 8 0 6 7 5 9 7 3 6 0 RAYTHEON CO» LINEAR INTEGRATED CIRCUITS PRODUCT SPECIFICATIONS Voltage-to-Frequency Converters Raytheon Features • Single supply operation ■ Pulse output compatible with all logic forms


    OCR Scan     		PDF 7ST73t RC4151,

    amplifier CV 203

    Abstract: 2N2708 2n3424 2N3423 2N918 JAN 2n917 die raytheon npn 0100BSC 254BSC 2n2857
    Text: RA YTHEON/ SE MI CO NDUCT OR 75 97360 RAYTHEON» SEMICON DU CT OR hi ]>F| 75T73bD ODDSDfli 66C 05081 D T~- 3 l~ O Product Specifications Small Signal V NPN Raytheon Ultra High Frequency Oscillator and


    OCR Scan     		PDF 75T73bD 2N917 2N918/JAN 2N2608 2N2857 Fj7S173tO O-116) 14-Lead 100BSC 548SC amplifier CV 203 2N2708 2n3424 2N3423 2N918 JAN 2n917 die raytheon npn 0100BSC 254BSC 2n2857

    transistor T79

    Abstract: LM324N LM224J
    Text: RAYTHEON-. SEMICONDUCTOR 57 » É J 75^73^.0 O O O M ^ 57C 0 4 4 4 9 .7597 360 RAYTHEON CO* PRO D U CT SPECIFICATIO N S Raytheon Single-Supply Quad Operational Amplifiers Features • ■ ■ ■ ■ ■ Large DC voltage gain — 100dB Compatible with all forms of logic


    OCR Scan     		PDF LM124/224/324 100dB LM124/224/324/2902 i73bO 5-01800A transistor T79 LM324N LM224J

    RC5534NB

    Abstract: RC5534ANB RM5534 RC5534ADE RC5534A raytheon RC5534 s7 200 noise Bt141 rc5534
    Text: RAYTHEON-. SEMICONDUCTOR S7 p r o d u c t s p e c ific a tio n s 7 5 9 7 3 6 0 RAYTHEON CO* Raytheon D E | 7 ST 73 bü^ DD0 41 ô 1 û LINEAR INTEGRATED CIRCUITS ' 57C 0 4 6 8 9 High Performance Low Noise Operational Amplifier Features • Small signal bandwidth — 10MHz


    OCR Scan     		PDF RC5534 10MHz 600X1, 10kHz 200kHz 7ST73t RC5534NB RC5534ANB RM5534 RC5534ADE RC5534A raytheon RC5534 s7 200 noise Bt141 rc5534

    RC4559NB

    Abstract: 4559 raytheon RM4559DE RM4559 RC4559
    Text: "RAYTHEON-. SEMICONDUCTOR S7 7597360 j>F| ?Sci73bD DDD4bbfi D |~~ RAYTHEON CO» 57C P R O D U C T SP E C IF IC A T IO N S Raytheon 04668 D T-79- LIN E A R IN T E G R A T E D C IR C U ITS High Performance Dual Operational Amplifier RC4559 Features Description


    OCR Scan     		PDF i73bD T-79- RC4559 T-79-05-20 400Hz i73bG RC4559NB 4559 raytheon RM4559DE RM4559 RC4559

    Untitled

    Abstract: No abstract text available
    Text: _ i _ s-RAYTHEON/ bb SEMICONDUCTOR d e Its ^ L iO DOOSOñi O T - 3 7~<5Product Specifications Sm all Signal Transistors G A PNP Raytheon Low Level, General Purpose Amplifiers and Switches Description G A PNP General purpose low power amplifier and


    OCR Scan     		PDF 100mA. 2N3250A/JAN 2N3251A/JAN 5-1022A DDDS01S 27BSC 254BSC 050BSC 100BSC

    Untitled

    Abstract: No abstract text available
    Text: Raytheon Electronics RMPA61810 Single Channel 6-18 GHz 1W MMIC Power Amplifier Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to


    OCR Scan     		PDF RMPA61810 RMPA61810

    2n3499

    Abstract: No abstract text available
    Text: RAYTHEON/ SEM ICO ND UC TO R T4 CC □□□5551 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS RAYTHEON. DËÏ7ST73bD High Voltage General Purpose Amplifiers and Switches NPN Description Popular Types General purpose am plifier and switch for high voltage applications. The


    OCR Scan     		PDF 7ST73bD 2N3501/JAN 2N3500/JAN 2N3499/JAN 2N3498/JAN 2N3440 Min00 508BSC 100BSC 200BSC 2n3499

    RC3302DB

    Abstract: ic lm 339 RC3302 LM339AJ av 339 pin for lm 339 ic lm339n Linear Integrated Circuit LM2901 LM 339 application note LM339AM raytheon
    Text: RAYTHEON-, SEMICONDU CTOR S7 57C 0 4 6 9 8 7 5 9 7 3 6 0 RAYTHEON CO» D LINEAR INTEGRATED CIRCUITS PRO D U CT SPECIFIC A TIO N S Raytheon DËj| 7ST7 3bO OOGMbTfl Single-Supply Quad Comparators Features • Input common mode voltage range includes ground ■ Wide single supply voltage range — 2V to 36V


    OCR Scan     		PDF LM139/139A, 239/239A, 339/339A, RC3302 1N914 73tiO 0470ci RC3302DB ic lm 339 RC3302 LM339AJ av 339 pin for lm 339 ic lm339n Linear Integrated Circuit LM2901 LM 339 application note LM339AM raytheon

    2N3726

    Abstract: 45-BSC JAN2N2905A 2n2907a raytheon 2N2004 2N2907AJ 2N3503 RAYTHEON SP2907AQD 2N721
    Text: RAYTHEON/ SEMICONDUCTOR 7597360 RA YTH EO N . T4 I [f| 7 5 ^ 7 3 ^ 0 O D O S S D S 0 | ~ SEM ICO ND UCTOR 94D Product Specifications Small Signal Transistors 05505 D 7*- * 7 ~f 7 G B PNP Raytheon Medium Current General Purpose Amplifiers and Switches Description


    OCR Scan     		PDF 7ST73b0 500mA. 2N2907A/JAN 2N2906A/JAN 2N2905A/JAN 2N2904A/JAN 65-1006B 100BSC 54BSC O-116) 2N3726 45-BSC JAN2N2905A 2n2907a raytheon 2N2004 2N2907AJ 2N3503 RAYTHEON SP2907AQD 2N721

    RF TRANSISTOR 1.5 GHZ dual gate

    Abstract: No abstract text available
    Text: Raytheon Electronics RMPA61800 Dual-Channel 6-18 GHz 2W MMIC Power Amplifier Description Features Electrical Characteristics Single Channel The Raytheon RMPA61800 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron


    OCR Scan     		PDF RMPA61800 RMPA61800 RF TRANSISTOR 1.5 GHZ dual gate

    2N3640

    Abstract: 2N3304 2n4208 2N2409 2N4258 High Speed Switches 2n2894a 2N5910 sm 58 b transistors 2N2894
    Text: RAYTHEON/ SEMICONDUCTOR hh ]> E |7 S ^ 7 3tD '- r - Product Specifications Small Signal Transistors Q O D Sm ? 5 7 - /S' G R PNP Raytheon Ultra High Speed Switches Description G R PNP Ultra high speed platinum doped silicon epitaxial PNP transistors useful for high speed


    OCR Scan     		PDF 2N4208 2N2409 2N5910 2N2894A 65-1025B 050BSC 100BSC 27BSC 54BSC 2N3640 2N3304 2n4208 2N2409 2N4258 High Speed Switches 2n2894a 2N5910 sm 58 b transistors 2N2894

    2n3817

    Abstract: 2N3804 2N3800 2N3802 2N3812 2n3816 raytheon emitter pad 2N381 2N4942 raytheon npn
    Text: RAYTHEON/ SEMICONDUCTOR T4 7597360 RAYTHEON. ^AYTUFnin RAYTHEON J 0005557 S E M IC O N D U C T O R 94D 05527 Low Level, Low Noise D j - z - f - Z ' l H j g h G a j n A m p | j f ¡e r s Popular Types Description G eneral purpose a m p lifier for low level, low noise and high gain amplifier


    OCR Scan     		PDF 75T73fc 2604/JA 2605/JA 54BSC O-116) 14-Lead 100BSC 2n3817 2N3804 2N3800 2N3802 2N3812 2n3816 raytheon emitter pad 2N381 2N4942 raytheon npn

    Untitled

    Abstract: No abstract text available
    Text: RAYTHEON/ SEMICONDUCTOR T4 Small Signal Transistors PRODUCT SPECIFICATIONS 7597360 RAYTHEON IE O N . GC » r i Y S T Y B L O 00D5517 S E M IC O N D U C TO R . Ä 05517 94D High Voltage General Purpose Amplifiers and Switches D T - ¿? -Z3 PNP Popular Types


    OCR Scan     		PDF 00D5517 2N3634/JAN 2N3635/JAN 2N3636/JAN 2N3637A/JAN 2N3636J 910-379-64B4 100BSC 200BSC 54BSC

    RL7320

    Abstract: RL76 8 bit barrel shifter T-42-11-09 transistor 2N RL7220 8 BIT ALU by 74181
    Text: RAYTHEONi 7597360 SEMICONDUCTOR RAYTHEON» AO De 7ST73bO SEMICONDUCTOR DDDS32T 80C 0 5 3 2 9 Product Specifications Configurable Gate Arrays 5 T-42-11-09 RL7000 Series Raytheon RL7000 Series Silicon-Gate HCMOS Logic Arrays Features • Silicon-gate 2.0/u (drawn HCMOS technology


    OCR Scan     		PDF 7ST73bO DDDS32T T-42-11-09 RL7000 MUX21LA) 16-Bit RL7320 RL76 8 bit barrel shifter transistor 2N RL7220 8 BIT ALU by 74181

    sp3725

    Abstract: 2N3252 raytheon 2n
    Text: RAYTHEON/ SEMICONDUCTOR T4 7597360 RAYTHEO N. D E | ? 5 c173t.D 0 0 0 5 5 3 5 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS S E M IC O N D U C T O R 94D 05535 High Current, High Speed Switches RAYTHEON D T -ss*-/ 7 Popular Types Description T he CK is a gold doped transistor


    OCR Scan     		PDF 3724/A 3725/A 3735/JA 2N3736 3737/JAN 2N4013 2N4014 2N4013, 2N3724 54BSC sp3725 2N3252 raytheon 2n